147 related articles for article (PubMed ID: 31728031)
1. High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules.
Sabbar A; Madhusoodhanan S; Al-Kabi S; Dong B; Wang J; Atcitty S; Kaplar R; Ding D; Mantooth A; Yu SQ; Chen Z
Sci Rep; 2019 Nov; 9(1):16758. PubMed ID: 31728031
[TBL] [Abstract][Full Text] [Related]
2. Design and optimization of high temperature optocouplers as galvanic isolation.
Sabbar A; Madhusoodhanan S; Tran H; Dong B; Wang J; Mantooth A; Yu SQ; Chen Z
Sci Rep; 2022 Feb; 12(1):2228. PubMed ID: 35140272
[TBL] [Abstract][Full Text] [Related]
3. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.
Jung BO; Bae SY; Lee S; Kim SY; Lee JY; Honda Y; Amano H
Nanoscale Res Lett; 2016 Dec; 11(1):215. PubMed ID: 27102904
[TBL] [Abstract][Full Text] [Related]
4. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
Liu W; Zhao DG; Jiang DS; Chen P; Liu ZS; Zhu JJ; Shi M; Zhao DM; Li X; Liu JP; Zhang SM; Wang H; Yang H; Zhang YT; Du GT
Opt Express; 2015 Jun; 23(12):15935-43. PubMed ID: 26193570
[TBL] [Abstract][Full Text] [Related]
5. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
Chang HM; Lai WC; Chen WS; Chang SJ
Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
[TBL] [Abstract][Full Text] [Related]
6. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.
Wang L; Jin J; Mi C; Hao Z; Luo Y; Sun C; Han Y; Xiong B; Wang J; Li H
Materials (Basel); 2017 Oct; 10(11):. PubMed ID: 29072611
[TBL] [Abstract][Full Text] [Related]
7. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.
Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ
Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079
[TBL] [Abstract][Full Text] [Related]
8. A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates.
Ryu HY; Jeon KS; Kang MG; Yuh HK; Choi YH; Lee JS
Sci Rep; 2017 Apr; 7():44814. PubMed ID: 28401941
[TBL] [Abstract][Full Text] [Related]
9. Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.
Sheu JK; Chen FB; Wang YC; Chang CC; Huang SH; Liu CN; Lee ML
Opt Express; 2015 Apr; 23(7):A232-9. PubMed ID: 25968789
[TBL] [Abstract][Full Text] [Related]
10. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes.
Park AH; Chandramohan S; Seo TH; Lee GH; Min KH; Hong CH; Kim MJ; Suh EK
Nanotechnology; 2016 Jul; 27(27):275602. PubMed ID: 27232210
[TBL] [Abstract][Full Text] [Related]
11. Local nanotip arrays sculptured by atomic force microscopy to enhance the light-output efficiency of GaN-based light-emitting diode structures.
Huang CY; Yao YC; Lee YJ; Lin TY; Kao WJ; Shang Hwang J; Yang YJ; Shen JL
Nanotechnology; 2014 May; 25(19):195401. PubMed ID: 24763484
[TBL] [Abstract][Full Text] [Related]
12. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.
Zhou S; Liu X; Yan H; Gao Y; Xu H; Zhao J; Quan Z; Gui C; Liu S
Sci Rep; 2018 Jul; 8(1):11053. PubMed ID: 30038360
[TBL] [Abstract][Full Text] [Related]
13. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.
Wang H; Ji Z; Qu S; Wang G; Jiang Y; Liu B; Xu X; Mino H
Opt Express; 2012 Feb; 20(4):3932-40. PubMed ID: 22418149
[TBL] [Abstract][Full Text] [Related]
14. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.
Song H; Kim JS; Kim EK; Seo YG; Hwang SM
Nanotechnology; 2010 Apr; 21(13):134026. PubMed ID: 20208099
[TBL] [Abstract][Full Text] [Related]
15. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.
Sun Y; Zhou K; Feng M; Li Z; Zhou Y; Sun Q; Liu J; Zhang L; Li D; Sun X; Li D; Zhang S; Ikeda M; Yang H
Light Sci Appl; 2018; 7():13. PubMed ID: 30839586
[TBL] [Abstract][Full Text] [Related]
16. Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate.
Kim J; Lee S; Oh J; Ryu J; Park Y; Park SH; Yoon E
Sci Rep; 2019 Jun; 9(1):8282. PubMed ID: 31164674
[TBL] [Abstract][Full Text] [Related]
17. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.
Zhao WR; Weng GE; Wang JY; Zhang JY; Liang HW; Sekiguchi T; Zhang BP
Nanoscale Res Lett; 2015 Dec; 10(1):459. PubMed ID: 26625883
[TBL] [Abstract][Full Text] [Related]
18. Linearly polarized light emission from InGaN/GaN quantum well structure with high indium composition.
Song H; Kim EK; Han IK; Lee SH; Hwang SM
J Nanosci Nanotechnol; 2011 Oct; 11(10):9222-6. PubMed ID: 22400327
[TBL] [Abstract][Full Text] [Related]
19. Balanced Strain Compensation of In
An WC; Kim HG; Kwac LK; So JS; Lee HJ
J Nanosci Nanotechnol; 2019 Apr; 19(4):2224-2227. PubMed ID: 30486972
[TBL] [Abstract][Full Text] [Related]
20. Development of high performance green c-plane III-nitride light-emitting diodes.
Alhassan AI; Young NG; Farrell RM; Pynn C; Wu F; Alyamani AY; Nakamura S; DenBaars SP; Speck JS
Opt Express; 2018 Mar; 26(5):5591-5601. PubMed ID: 29529761
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]