These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

112 related articles for article (PubMed ID: 31770747)

  • 1. Contact engineering high-performance ambipolar multilayer tellurium transistors.
    Qin F; Hu Y; Hu P; Feng W
    Nanotechnology; 2020 Mar; 31(11):115204. PubMed ID: 31770747
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Ambipolar MoS
    Giannazzo F; Fisichella G; Greco G; Di Franco S; Deretzis I; La Magna A; Bongiorno C; Nicotra G; Spinella C; Scopelliti M; Pignataro B; Agnello S; Roccaforte F
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):23164-23174. PubMed ID: 28603968
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In
    Feng W; Gao F; Hu Y; Dai M; Liu H; Wang L; Hu P
    ACS Appl Mater Interfaces; 2018 Aug; 10(33):27584-27588. PubMed ID: 30080027
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Performance improvement of multilayer InSe transistors with optimized metal contacts.
    Feng W; Zhou X; Tian WQ; Zheng W; Hu P
    Phys Chem Chem Phys; 2015 Feb; 17(5):3653-8. PubMed ID: 25554466
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Tunable electronic properties of multilayer InSe by alloy engineering for high performance self-powered photodetector.
    Yu M; Gao F; Hu Y; Wang L; Hu P; Feng W
    J Colloid Interface Sci; 2020 Apr; 565():239-244. PubMed ID: 31972337
    [TBL] [Abstract][Full Text] [Related]  

  • 6. End-Bonded Contacts of Tellurium Transistors.
    Jiang W; Wang X; Chen Y; Wu S; Wu B; Yang X; Lin T; Shen H; Meng X; Wu X; Chu J; Wang J
    ACS Appl Mater Interfaces; 2021 Feb; 13(6):7766-7772. PubMed ID: 33543928
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS; Lee AY; Kwak DH; Jeong MH; Lee JS
    ACS Appl Mater Interfaces; 2018 Jan; 10(1):925-932. PubMed ID: 29256593
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.
    Zhu W; Yogeesh MN; Yang S; Aldave SH; Kim JS; Sonde S; Tao L; Lu N; Akinwande D
    Nano Lett; 2015 Mar; 15(3):1883-90. PubMed ID: 25715122
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS₂.
    Ponomarev E; Gutiérrez-Lezama I; Ubrig N; Morpurgo AF
    Nano Lett; 2015 Dec; 15(12):8289-94. PubMed ID: 26594892
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A Nonchlorinated Solvent-Processable Fluorinated Planar Conjugated Polymer for Flexible Field-Effect Transistors.
    Lee M; Kim MJ; Ro S; Choi S; Jin SM; Nguyen HD; Yang J; Lee KK; Lim DU; Lee E; Kang MS; Choi JH; Cho JH; Kim B
    ACS Appl Mater Interfaces; 2017 Aug; 9(34):28817-28827. PubMed ID: 28783949
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Diketopyrrolopyrrole-Porphyrin Based Conjugated Polymers for Ambipolar Field-Effect Transistors.
    Zhou S; Li C; Zhang J; Yu Y; Zhang A; Wu Y; Li W
    Chem Asian J; 2017 Aug; 12(15):1861-1864. PubMed ID: 28557361
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability.
    Guo X; Ortiz RP; Zheng Y; Hu Y; Noh YY; Baeg KJ; Facchetti A; Marks TJ
    J Am Chem Soc; 2011 Feb; 133(5):1405-18. PubMed ID: 21207965
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ambipolar and unipolar PbSe nanowire field-effect transistors.
    Kim DK; Vemulkar TR; Oh SJ; Koh WK; Murray CB; Kagan CR
    ACS Nano; 2011 Apr; 5(4):3230-6. PubMed ID: 21405024
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.
    Li H; Wu J; Yin Z; Zhang H
    Acc Chem Res; 2014 Apr; 47(4):1067-75. PubMed ID: 24697842
    [TBL] [Abstract][Full Text] [Related]  

  • 15. A nonchlorinated solvent-processed polymer semiconductor for high-performance ambipolar transistors.
    Yang J; Jiang Y; Zhao Z; Yang X; Zhang Z; Chen J; Li J; Shi W; Wang S; Guo Y; Liu Y
    Natl Sci Rev; 2022 Apr; 9(4):nwab145. PubMed ID: 35475218
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors.
    Xie W; Prabhumirashi PL; Nakayama Y; McGarry KA; Geier ML; Uragami Y; Mase K; Douglas CJ; Ishii H; Hersam MC; Frisbie CD
    ACS Nano; 2013 Nov; 7(11):10245-56. PubMed ID: 24175573
    [TBL] [Abstract][Full Text] [Related]  

  • 17. MoS
    He X; Chow W; Liu F; Tay B; Liu Z
    Small; 2017 Jan; 13(2):. PubMed ID: 27762499
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating.
    Lokteva I; Thiemann S; Gannott F; Zaumseil J
    Nanoscale; 2013 May; 5(10):4230-5. PubMed ID: 23545580
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities.
    Pradhan NR; Rhodes D; Xin Y; Memaran S; Bhaskaran L; Siddiq M; Hill S; Ajayan PM; Balicas L
    ACS Nano; 2014 Aug; 8(8):7923-9. PubMed ID: 25007391
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline Se
    Huang H; Zha J; Xu S; Yang P; Xia Y; Wang H; Dong D; Zheng L; Yao Y; Zhang Y; Chen Y; Ho JC; Chan HP; Zhao C; Tan C
    ACS Nano; 2024 Jul; 18(26):17293-17303. PubMed ID: 38885180
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.