These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
4. Ultralow Defect Density at Sub-0.5 nm HfO Kavrik MS; Thomson E; Chagarov E; Tang K; Ueda ST; Hou V; Aoki T; Kim M; Fruhberger B; Taur Y; McIntyre PC; Kummel AC ACS Appl Mater Interfaces; 2018 Sep; 10(36):30794-30802. PubMed ID: 30073827 [TBL] [Abstract][Full Text] [Related]
5. Low temperature thermal ALD of a SiN Edmonds M; Sardashti K; Wolf S; Chagarov E; Clemons M; Kent T; Park JH; Tang K; McIntyre PC; Yoshida N; Dong L; Holmes R; Alvarez D; Kummel AC J Chem Phys; 2017 Feb; 146(5):052820. PubMed ID: 28178835 [TBL] [Abstract][Full Text] [Related]
6. Probing Interface Defects in Top-Gated MoS Zhao P; Azcatl A; Gomeniuk YY; Bolshakov P; Schmidt M; McDonnell SJ; Hinkle CL; Hurley PK; Wallace RM; Young CD ACS Appl Mater Interfaces; 2017 Jul; 9(28):24348-24356. PubMed ID: 28650155 [TBL] [Abstract][Full Text] [Related]
7. Interface Electrical Properties of Al Fisichella G; Schilirò E; Di Franco S; Fiorenza P; Lo Nigro R; Roccaforte F; Ravesi S; Giannazzo F ACS Appl Mater Interfaces; 2017 Mar; 9(8):7761-7771. PubMed ID: 28135063 [TBL] [Abstract][Full Text] [Related]
8. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer. He G; Gao J; Chen H; Cui J; Sun Z; Chen X ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009 [TBL] [Abstract][Full Text] [Related]
9. Ge pMOSFETs with GeO Xu Y; Han G; Liu H; Wang Y; Liu Y; Ao J; Hao Y Nanoscale Res Lett; 2019 Apr; 14(1):126. PubMed ID: 30953229 [TBL] [Abstract][Full Text] [Related]
10. Probing the Dielectric Properties of Ultrathin Al/Al Acharya J; Wilt J; Liu B; Wu J ACS Appl Mater Interfaces; 2018 Jan; 10(3):3112-3120. PubMed ID: 29293311 [TBL] [Abstract][Full Text] [Related]
11. Interface Chemistry and Dielectric Optimization of TMA-Passivated high- Wang D; He G; Hao L; Qiao L; Fang Z; Liu J ACS Appl Mater Interfaces; 2020 Jun; 12(22):25390-25399. PubMed ID: 32383855 [TBL] [Abstract][Full Text] [Related]
12. Modeling and in Situ Probing of Surface Reactions in Atomic Layer Deposition. Zheng Y; Hong S; Psofogiannakis G; Rayner GB; Datta S; van Duin ACT; Engel-Herbert R ACS Appl Mater Interfaces; 2017 May; 9(18):15848-15856. PubMed ID: 28380291 [TBL] [Abstract][Full Text] [Related]
13. Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator. Kim Y; Han J; Takenaka M; Takagi S Opt Express; 2014 Apr; 22(7):7458-64. PubMed ID: 24718120 [TBL] [Abstract][Full Text] [Related]
14. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction. Tuominen M; Yasir M; Lång J; Dahl J; Kuzmin M; Mäkelä J; Punkkinen M; Laukkanen P; Kokko K; Schulte K; Punkkinen R; Korpijärvi VM; Polojärvi V; Guina M Phys Chem Chem Phys; 2015 Mar; 17(10):7060-6. PubMed ID: 25686555 [TBL] [Abstract][Full Text] [Related]
15. Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al Tang K; Meng AC; Droopad R; McIntyre PC ACS Appl Mater Interfaces; 2016 Nov; 8(44):30601-30607. PubMed ID: 27758108 [TBL] [Abstract][Full Text] [Related]
16. Investigate on the Mechanism of HfO Yao Q; Ma X; Wang H; Wang Y; Wang G; Zhang J; Liu W; Wang X; Yan J; Li Y; Wang W Nanomaterials (Basel); 2021 Apr; 11(4):. PubMed ID: 33918553 [TBL] [Abstract][Full Text] [Related]
17. Electrical properties and thermal stability in stack structure of HfO Baik M; Kang HK; Kang YS; Jeong KS; An Y; Choi S; Kim H; Song JD; Cho MH Sci Rep; 2017 Sep; 7(1):11337. PubMed ID: 28900097 [TBL] [Abstract][Full Text] [Related]
18. Effective suppression of nano-textured black silicon surface recombination channels through sputtered aluminum oxide: A comparison study with ALD grown films. Parashar PK Nanotechnology; 2020 Jun; ():. PubMed ID: 32604087 [TBL] [Abstract][Full Text] [Related]
19. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition. Zhernokletov DM; Negara MA; Long RD; Aloni S; Nordlund D; McIntyre PC ACS Appl Mater Interfaces; 2015 Jun; 7(23):12774-80. PubMed ID: 25988586 [TBL] [Abstract][Full Text] [Related]