These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
263 related articles for article (PubMed ID: 31783375)
21. Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement. Fahed M; Desplanque L; Troadec D; Patriarche G; Wallart X Nanotechnology; 2016 Dec; 27(50):505301. PubMed ID: 27861165 [TBL] [Abstract][Full Text] [Related]
22. Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport. Dubrovskii VG Nanomaterials (Basel); 2022 Mar; 12(7):. PubMed ID: 35407180 [TBL] [Abstract][Full Text] [Related]
23. High-Mobility GaSb Nanostructures Cointegrated with InAs on Si. Borg M; Schmid H; Gooth J; Rossell MD; Cutaia D; Knoedler M; Bologna N; Wirths S; Moselund KE; Riel H ACS Nano; 2017 Mar; 11(3):2554-2560. PubMed ID: 28225591 [TBL] [Abstract][Full Text] [Related]
24. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires. Dubrovskii VG; Hijazi H Nanomaterials (Basel); 2020 Apr; 10(5):. PubMed ID: 32349326 [TBL] [Abstract][Full Text] [Related]
25. Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates. Dimakis E; Jahn U; Ramsteiner M; Tahraoui A; Grandal J; Kong X; Marquardt O; Trampert A; Riechert H; Geelhaar L Nano Lett; 2014 May; 14(5):2604-9. PubMed ID: 24678901 [TBL] [Abstract][Full Text] [Related]
26. Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy. Bastiman F; Küpers H; Somaschini C; Geelhaar L Nanotechnology; 2016 Mar; 27(9):095601. PubMed ID: 26822408 [TBL] [Abstract][Full Text] [Related]
28. Silver-assisted growth of high-quality InAs Wen L; Liu L; Liao D; Zhuo R; Pan D; Zhao J Nanotechnology; 2020 Nov; 31(46):465602. PubMed ID: 32750681 [TBL] [Abstract][Full Text] [Related]
29. Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors. Xu L; Li X; Zhan Z; Wang L; Feng S; Chai X; Lu W; Shen J; Weng Z; Sun J ACS Appl Mater Interfaces; 2015 Sep; 7(36):20264-71. PubMed ID: 26308593 [TBL] [Abstract][Full Text] [Related]
30. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy. Zhang Y; Aagesen M; Holm JV; Jørgensen HI; Wu J; Liu H Nano Lett; 2013 Aug; 13(8):3897-902. PubMed ID: 23899047 [TBL] [Abstract][Full Text] [Related]
32. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell. Khelifi W; Coinon C; Berthe M; Troadec D; Patriarche G; Wallart X; Grandidier B; Desplanque L Nanotechnology; 2023 Apr; 34(26):. PubMed ID: 36975178 [TBL] [Abstract][Full Text] [Related]
33. Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms. Gao F; Wen L; Xu Z; Han J; Yu Y; Zhang S; Li G Small; 2017 Jun; 13(21):. PubMed ID: 28383169 [TBL] [Abstract][Full Text] [Related]
34. Mid-infrared III-V semiconductor lasers epitaxially grown on Si substrates. Tournié E; Monge Bartolome L; Rio Calvo M; Loghmari Z; Díaz-Thomas DA; Teissier R; Baranov AN; Cerutti L; Rodriguez JB Light Sci Appl; 2022 Jun; 11(1):165. PubMed ID: 35650192 [TBL] [Abstract][Full Text] [Related]
36. Preferred growth direction of III-V nanowires on differently oriented Si substrates. Zeng H; Yu X; Fonseka HA; Boras G; Jurczak P; Wang T; Sanchez AM; Liu H Nanotechnology; 2020 Nov; 31(47):475708. PubMed ID: 32885789 [TBL] [Abstract][Full Text] [Related]
37. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy. Zhang Z; Shi SX; Chen PP; Lu W; Zou J Nanotechnology; 2015 Jan; 26(25):255601. PubMed ID: 26024290 [TBL] [Abstract][Full Text] [Related]
38. Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures. Shi S; Zhang Z; Lu Z; Shu H; Chen P; Li N; Zou J; Lu W Nanoscale Res Lett; 2015; 10():108. PubMed ID: 25852403 [TBL] [Abstract][Full Text] [Related]
39. Controlling heterojunction abruptness in VLS-grown semiconductor nanowires via in situ catalyst alloying. Perea DE; Li N; Dickerson RM; Misra A; Picraux ST Nano Lett; 2011 Aug; 11(8):3117-22. PubMed ID: 21696182 [TBL] [Abstract][Full Text] [Related]
40. Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy. Chusovitin E; Dotsenko S; Chusovitina S; Goroshko D; Gutakovskii A; Subbotin E; Galkin K; Galkin N Nanomaterials (Basel); 2018 Nov; 8(12):. PubMed ID: 30487412 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]