These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

192 related articles for article (PubMed ID: 31817757)

  • 21. A WSe
    Di Bartolomeo A; Urban F; Passacantando M; McEvoy N; Peters L; Iemmo L; Luongo G; Romeo F; Giubileo F
    Nanoscale; 2019 Jan; 11(4):1538-1548. PubMed ID: 30629066
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Nanoscale vacuum channel transistor with in-plane collection structure.
    Xu J; Hu H; Yang W; Li C; Shi Y; Shi Y; Wang Q; Zhang X
    Nanotechnology; 2020 Jan; 31(6):065202. PubMed ID: 31658453
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Enabling Multifunctional Organic Transistors with Fine-Tuned Charge Transport.
    Di CA; Shen H; Zhang F; Zhu D
    Acc Chem Res; 2019 Apr; 52(4):1113-1124. PubMed ID: 30908012
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Analysis of Channel Current Noise in Small Nanoscale Metal Oxide Semiconductor Field Effect Transistors.
    Jia X; Wei Q; Zhu Y; Zhang W; He L
    Small; 2024 Nov; 20(47):e2403659. PubMed ID: 39169702
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.
    Jung BJ; Martinez Hardigree JF; Dhar BM; Dawidczyk TJ; Sun J; See KC; Katz HE
    ACS Nano; 2011 Apr; 5(4):2723-34. PubMed ID: 21351783
    [TBL] [Abstract][Full Text] [Related]  

  • 26. T-Channel Field Effect Transistor with Three InputTerminals (Ti-TcFET).
    Chen Z; Hu J; Ye H; Chu Z
    Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936107
    [TBL] [Abstract][Full Text] [Related]  

  • 27. High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors.
    Nguyen HD; Kang JS; Li M; Hu Y
    Nanoscale; 2019 Feb; 11(7):3129-3137. PubMed ID: 30706919
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Predicting the miniaturization limit of vertical organic field effect transistor (VOFET) with perforated graphene as a source electrode.
    Shukla G; Bisht RS; Kumar P
    Nanotechnology; 2023 Oct; 35(3):. PubMed ID: 37820593
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Optimal design of an electret microphone metal-oxide-semiconductor field-effect transistor preamplifier.
    van der Donk AG; Bergveld P
    J Acoust Soc Am; 1992 Apr; 91(4 Pt 1):2261-9. PubMed ID: 1597614
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering.
    Kumar A; Müller J; Pelloquin S; Lecestre A; Larrieu G
    Nano Lett; 2024 Jul; 24(26):7825-7832. PubMed ID: 38885473
    [TBL] [Abstract][Full Text] [Related]  

  • 31. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.
    Sun Z; Huang H; Sun N; Tao P; Zhao C; Liang YC
    Micromachines (Basel); 2019 Dec; 10(12):. PubMed ID: 31817374
    [TBL] [Abstract][Full Text] [Related]  

  • 32. n-Channel semiconductor materials design for organic complementary circuits.
    Usta H; Facchetti A; Marks TJ
    Acc Chem Res; 2011 Jul; 44(7):501-10. PubMed ID: 21615105
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Functionalized Organic Thin Film Transistors for Biosensing.
    Wang N; Yang A; Fu Y; Li Y; Yan F
    Acc Chem Res; 2019 Feb; 52(2):277-287. PubMed ID: 30620566
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
    Smith C; Qaisi R; Liu Z; Yu Q; Hussain MM
    ACS Nano; 2013 Jul; 7(7):5818-23. PubMed ID: 23777434
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.
    Baby TT; Rommel M; von Seggern F; Friederich P; Reitz C; Dehm S; Kübel C; Wenzel W; Hahn H; Dasgupta S
    Adv Mater; 2017 Jan; 29(4):. PubMed ID: 27859773
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.
    Luo H; Liang L; Cao H; Dai M; Lu Y; Wang M
    ACS Appl Mater Interfaces; 2015 Aug; 7(31):17023-31. PubMed ID: 26189702
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.
    Sun MC; Kim G; Kim SW; Kim HW; Kim H; Lee JH; Shin H; Park BG
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5313-7. PubMed ID: 22966563
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Charge-Transfer-Induced p-Type Channel in MoS
    Min SW; Yoon M; Yang SJ; Ko KR; Im S
    ACS Appl Mater Interfaces; 2018 Jan; 10(4):4206-4212. PubMed ID: 29318882
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Electron irradiation of multilayer [Formula: see text] field effect transistors.
    Di Bartolomeo A; Urban F; Pelella A; Grillo A; Passacantando M; Liu X; Giubileo F
    Nanotechnology; 2020 Sep; 31(37):375204. PubMed ID: 32428882
    [TBL] [Abstract][Full Text] [Related]  

  • 40. A subthermionic tunnel field-effect transistor with an atomically thin channel.
    Sarkar D; Xie X; Liu W; Cao W; Kang J; Gong Y; Kraemer S; Ajayan PM; Banerjee K
    Nature; 2015 Oct; 526(7571):91-5. PubMed ID: 26432247
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.