These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
160 related articles for article (PubMed ID: 31846950)
1. The mechanism underlying silicon oxide based resistive random-access memory (ReRAM). Chen YL; Ho MS; Lee WJ; Chung PF; Balraj B; Sivakumar C Nanotechnology; 2020 Apr; 31(14):145709. PubMed ID: 31846950 [TBL] [Abstract][Full Text] [Related]
2. Structural phase transition and resistive switching properties of Cu Seo J; Kim T; Kim Y; Jeong MS; Kim EK Nanotechnology; 2024 Feb; 35(18):. PubMed ID: 38271739 [TBL] [Abstract][Full Text] [Related]
3. Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models. Nakamura H; Asai Y Phys Chem Chem Phys; 2016 Apr; 18(13):8820-6. PubMed ID: 26975565 [TBL] [Abstract][Full Text] [Related]
4. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices. Ambrosi E; Bricalli A; Laudato M; Ielmini D Faraday Discuss; 2019 Feb; 213(0):87-98. PubMed ID: 30364922 [TBL] [Abstract][Full Text] [Related]
6. Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO Falcone DF; Menzel S; Stecconi T; Galetta M; La Porta A; Offrein BJ; Bragaglia V Nanoscale Horiz; 2024 Apr; 9(5):775-784. PubMed ID: 38517375 [TBL] [Abstract][Full Text] [Related]
7. Resistive switching characteristics of the Cr/ZnO/Cr structure. Yoo EJ; Kim JH; Song JH; Yoon TS; Choi YJ; Kang CJ J Nanosci Nanotechnol; 2013 Sep; 13(9):6395-9. PubMed ID: 24205668 [TBL] [Abstract][Full Text] [Related]
8. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921 [TBL] [Abstract][Full Text] [Related]
9. Co nanoparticles induced resistive switching and magnetism for the electrochemically deposited polypyrrole composite films. Xu Z; Gao M; Yu L; Lu L; Xu X; Jiang Y ACS Appl Mater Interfaces; 2014 Oct; 6(20):17823-30. PubMed ID: 25245009 [TBL] [Abstract][Full Text] [Related]
10. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode. Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090 [TBL] [Abstract][Full Text] [Related]
11. Combinatorial synthesis of Cu/(Ta(x)Nb(1-x))2O5 stack structure for nanoionics-type ReRAM device. Nagata T; Haemori M; Chikyow T ACS Comb Sci; 2013 Aug; 15(8):435-8. PubMed ID: 23883301 [TBL] [Abstract][Full Text] [Related]
12. Flexible resistive random access memory devices by using NiO Lee K; Park JW; Tchoe Y; Yoon J; Chung K; Yoon H; Lee S; Yoon C; Ho Park B; Yi GC Nanotechnology; 2017 May; 28(20):205202. PubMed ID: 28303797 [TBL] [Abstract][Full Text] [Related]
13. The current limit and self-rectification functionalities in the TiO Yoon JH; Kwon DE; Kim Y; Kwon YJ; Yoon KJ; Park TH; Shao XL; Hwang CS Nanoscale; 2017 Aug; 9(33):11920-11928. PubMed ID: 28786468 [TBL] [Abstract][Full Text] [Related]
14. Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid. Oh SI; Rani JR; Hong SM; Jang JH Nanoscale; 2017 Oct; 9(40):15314-15322. PubMed ID: 28820212 [TBL] [Abstract][Full Text] [Related]
15. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics. Park S; Cho K; Jung J; Kim S J Nanosci Nanotechnol; 2015 Oct; 15(10):7569-72. PubMed ID: 26726373 [TBL] [Abstract][Full Text] [Related]
16. Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories. Chen S; Valov I Adv Mater; 2022 Jan; 34(3):e2105022. PubMed ID: 34695257 [TBL] [Abstract][Full Text] [Related]
17. Performance enhancement of HfO Byun JH; Ko WS; Kim KN; Lee DY; Kwon SY; Lee HD; Lee GW Nanotechnology; 2023 Jul; 34(39):. PubMed ID: 37343526 [TBL] [Abstract][Full Text] [Related]
18. Resistive switching characteristics of ZnO nanowires. Yoo EJ; Shin IK; Yoon TS; Choi YJ; Kang CJ J Nanosci Nanotechnol; 2014 Dec; 14(12):9459-64. PubMed ID: 25971083 [TBL] [Abstract][Full Text] [Related]
19. Transparent resistive switching memory using aluminum oxide on a flexible substrate. Yeom SW; Shin SC; Kim TY; Ha HJ; Lee YH; Shim JW; Ju BK Nanotechnology; 2016 Feb; 27(7):07LT01. PubMed ID: 26763473 [TBL] [Abstract][Full Text] [Related]
20. Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique. Wu CC; You HC; Lin YH; Yang CJ; Hsiao YP; Liao TP; Yang WL Materials (Basel); 2018 Feb; 11(2):. PubMed ID: 29425135 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]