These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
132 related articles for article (PubMed ID: 31852939)
1. Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO Rehman S; Kim H; Farooq Khan M; Hur JH; Lee AD; Kim DK Sci Rep; 2019 Dec; 9(1):19387. PubMed ID: 31852939 [TBL] [Abstract][Full Text] [Related]
2. Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant. Ismail M; Ahmed E; Rana AM; Hussain F; Talib I; Nadeem MY; Panda D; Shah NA ACS Appl Mater Interfaces; 2016 Mar; 8(9):6127-36. PubMed ID: 26881895 [TBL] [Abstract][Full Text] [Related]
3. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory. Zhao X; Song P; Gai H; Li Y; Ai C; Wen D Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957 [TBL] [Abstract][Full Text] [Related]
4. Improved Performance of NbO Xu J; Zhu Y; Liu Y; Wang H; Zou Z; Ma H; Wu X; Xiong R Nanomaterials (Basel); 2022 Mar; 12(6):. PubMed ID: 35335842 [TBL] [Abstract][Full Text] [Related]
5. Modulating the resistive switching stability of HfO Zhang DL; Wang J; Wu Q; Du Y Phys Chem Chem Phys; 2023 Aug; 25(33):22388-22400. PubMed ID: 37581208 [TBL] [Abstract][Full Text] [Related]
6. Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO Bai J; Xie W; Qu D; Wei S; Li Y; Qin F; Ji M; Wang D Nanotechnology; 2023 Mar; 34(23):. PubMed ID: 36863007 [TBL] [Abstract][Full Text] [Related]
7. Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study. Barman A; Das D; Deshmukh S; Sarkar PK; Banerjee D; Hübner R; Gupta M; Saini CP; Kumar S; Johari P; Dhar S; Kanjilal A ACS Appl Mater Interfaces; 2022 Aug; 14(30):34822-34834. PubMed ID: 35866235 [TBL] [Abstract][Full Text] [Related]
8. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO Rana AM; Akbar T; Ismail M; Ahmad E; Hussain F; Talib I; Imran M; Mehmood K; Iqbal K; Nadeem MY Sci Rep; 2017 Jan; 7():39539. PubMed ID: 28079056 [TBL] [Abstract][Full Text] [Related]
9. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering. Zhao X; Li Y; Ai C; Wen D Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535 [TBL] [Abstract][Full Text] [Related]
10. Novel ternary organic resistive switching memory doped with bipolar materials. Li H; Lan W; Wu X; Zhu Z; Wei B Nanotechnology; 2023 Jan; 34(11):. PubMed ID: 36595321 [TBL] [Abstract][Full Text] [Related]
11. Synthesis and Oxygen Storage Capacities of Yttrium-Doped CeO Xu Y; Gao L; Ding Z Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556775 [TBL] [Abstract][Full Text] [Related]
12. Design of Oxygen Vacancy Configuration for Memristive Systems. Schmitt R; Spring J; Korobko R; Rupp JLM ACS Nano; 2017 Sep; 11(9):8881-8891. PubMed ID: 28850213 [TBL] [Abstract][Full Text] [Related]
13. Improvement of the performance in Cr-doped ZnO memory devices Li SS; Su YK RSC Adv; 2019 Jan; 9(6):2941-2947. PubMed ID: 35518991 [TBL] [Abstract][Full Text] [Related]
14. Effect of Bilayer CeO Ismail M; Talib I; Rana AM; Akbar T; Jabeen S; Lee J; Kim S Nanoscale Res Lett; 2018 Oct; 13(1):318. PubMed ID: 30311009 [TBL] [Abstract][Full Text] [Related]
15. Compliance current controlled volatile and nonvolatile memory in Ag/CoFe Munjal S; Khare N Nanotechnology; 2021 Apr; 32(18):185204. PubMed ID: 33470980 [TBL] [Abstract][Full Text] [Related]
16. Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO. Ge NN; Gong CH; Yuan XC; Zeng HZ; Wei XH RSC Adv; 2018 Aug; 8(52):29499-29504. PubMed ID: 35547288 [TBL] [Abstract][Full Text] [Related]
17. Oxygen vacancy induced room temperature ferromagnetism in Pr-doped CeO2 thin films on silicon. Niu G; Hildebrandt E; Schubert MA; Boscherini F; Zoellner MH; Alff L; Walczyk D; Zaumseil P; Costina I; Wilkens H; Schroeder T ACS Appl Mater Interfaces; 2014 Oct; 6(20):17496-505. PubMed ID: 25255194 [TBL] [Abstract][Full Text] [Related]
18. Oxygen vacancy engineering of TaO Palhares JHQ; Beilliard Y; Alibart F; Bonturim E; de Florio DZ; Fonseca FC; Drouin D; Ferlauto AS Nanotechnology; 2021 Jul; 32(40):. PubMed ID: 34167106 [TBL] [Abstract][Full Text] [Related]
19. Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory. Park TH; Kwon YJ; Kim HJ; Woo HC; Kim GS; An CH; Kim Y; Kwon DE; Hwang CS ACS Appl Mater Interfaces; 2018 Jun; 10(25):21445-21450. PubMed ID: 29877075 [TBL] [Abstract][Full Text] [Related]
20. Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots. Banerjee W; Maikap S; Lai CS; Chen YY; Tien TC; Lee HY; Chen WS; Chen FT; Kao MJ; Tsai MJ; Yang JR Nanoscale Res Lett; 2012 Mar; 7(1):194. PubMed ID: 22439604 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]