327 related articles for article (PubMed ID: 31855598)
1. Schottky Barrier Variable Graphene/Multilayer-MoS
Lee I; Kim JN; Kang WT; Shin YS; Lee BH; Yu WJ
ACS Appl Mater Interfaces; 2020 Jan; 12(2):2854-2861. PubMed ID: 31855598
[TBL] [Abstract][Full Text] [Related]
2. Ultrahigh Gauge Factor in Graphene/MoS
Lee I; Kang WT; Shin YS; Kim YR; Won UY; Kim K; Duong DL; Lee K; Heo J; Lee YH; Yu WJ
ACS Nano; 2019 Jul; 13(7):8392-8400. PubMed ID: 31241306
[TBL] [Abstract][Full Text] [Related]
3. Efficient Gate Modulation in a Screening-Engineered MoS
Phan TL; Vu QA; Kim YR; Shin YS; Lee IM; Tran MD; Jiang J; Luong DH; Liao L; Lee YH; Yu WJ
ACS Appl Mater Interfaces; 2019 Jul; 11(28):25516-25523. PubMed ID: 31264836
[TBL] [Abstract][Full Text] [Related]
4. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.
Rathi S; Lee I; Lim D; Wang J; Ochiai Y; Aoki N; Watanabe K; Taniguchi T; Lee GH; Yu YJ; Kim P; Kim GH
Nano Lett; 2015 Aug; 15(8):5017-24. PubMed ID: 26091357
[TBL] [Abstract][Full Text] [Related]
5. Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions.
Tian H; Tan Z; Wu C; Wang X; Mohammad MA; Xie D; Yang Y; Wang J; Li LJ; Xu J; Ren TL
Sci Rep; 2014 Aug; 4():5951. PubMed ID: 25109609
[TBL] [Abstract][Full Text] [Related]
6. Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.
Kwak JY; Hwang J; Calderon B; Alsalman H; Munoz N; Schutter B; Spencer MG
Nano Lett; 2014 Aug; 14(8):4511-6. PubMed ID: 24978093
[TBL] [Abstract][Full Text] [Related]
7. Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.
Shih CJ; Wang QH; Son Y; Jin Z; Blankschtein D; Strano MS
ACS Nano; 2014 Jun; 8(6):5790-8. PubMed ID: 24824139
[TBL] [Abstract][Full Text] [Related]
8. MoS
Nourbakhsh A; Zubair A; Sajjad RN; Tavakkoli K G A; Chen W; Fang S; Ling X; Kong J; Dresselhaus MS; Kaxiras E; Berggren KK; Antoniadis D; Palacios T
Nano Lett; 2016 Dec; 16(12):7798-7806. PubMed ID: 27960446
[TBL] [Abstract][Full Text] [Related]
9. Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS
Lee I; Kang WT; Kim JE; Kim YR; Won UY; Lee YH; Yu WJ
ACS Nano; 2020 Jun; 14(6):7574-7580. PubMed ID: 32401483
[TBL] [Abstract][Full Text] [Related]
10. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.
Rahmani M; Ahmadi MT; Abadi HK; Saeidmanesh M; Akbari E; Ismail R
Nanoscale Res Lett; 2013 Jan; 8(1):55. PubMed ID: 23363692
[TBL] [Abstract][Full Text] [Related]
11. Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode.
Qu D; Liu X; Ahmed F; Lee D; Yoo WJ
Nanoscale; 2015 Dec; 7(45):19273-81. PubMed ID: 26531884
[TBL] [Abstract][Full Text] [Related]
12. Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS
Tabata H; Sato Y; Oi K; Kubo O; Katayama M
ACS Appl Mater Interfaces; 2018 Nov; 10(44):38387-38393. PubMed ID: 30360048
[TBL] [Abstract][Full Text] [Related]
13. Sub-10 nm Monolayer MoS
Xiao X; Chen M; Zhang J; Zhang T; Zhang L; Jin Y; Wang J; Jiang K; Fan S; Li Q
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11612-11617. PubMed ID: 30838844
[TBL] [Abstract][Full Text] [Related]
14. Few-Layered MoS
Zou X; Liu L; Xu J; Wang H; Tang WM
ACS Appl Mater Interfaces; 2020 Jul; 12(29):32943-32950. PubMed ID: 32610894
[TBL] [Abstract][Full Text] [Related]
15. Vertically Stacked CVD-Grown 2D Heterostructure for Wafer-Scale Electronics.
Kim S; Kim YC; Choi YJ; Woo HJ; Song YJ; Kang MS; Lee C; Cho JH
ACS Appl Mater Interfaces; 2019 Sep; 11(38):35444-35450. PubMed ID: 31456390
[TBL] [Abstract][Full Text] [Related]
16. Operation Mechanism of a MoS₂/BP Heterojunction FET.
Lim SK; Kang SC; Yoo TJ; Lee SK; Hwang HJ; Lee BH
Nanomaterials (Basel); 2018 Oct; 8(10):. PubMed ID: 30301261
[TBL] [Abstract][Full Text] [Related]
17. High-mobility junction field-effect transistor via graphene/MoS
Kim T; Fan S; Lee S; Joo MK; Lee YH
Sci Rep; 2020 Aug; 10(1):13101. PubMed ID: 32753604
[TBL] [Abstract][Full Text] [Related]
18. Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.
Yoon J; Park W; Bae GY; Kim Y; Jang HS; Hyun Y; Lim SK; Kahng YH; Hong WK; Lee BH; Ko HC
Small; 2013 Oct; 9(19):3295-300. PubMed ID: 23420782
[TBL] [Abstract][Full Text] [Related]
19. Low-Voltage and High-Performance Multilayer MoS
Singh AK; Hwang C; Eom J
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34699-34705. PubMed ID: 27998114
[TBL] [Abstract][Full Text] [Related]
20. Vertical and In-Plane Current Devices Using NbS
Shin HG; Yoon HS; Kim JS; Kim M; Lim JY; Yu S; Park JH; Yi Y; Kim T; Jun SC; Im S
Nano Lett; 2018 Mar; 18(3):1937-1945. PubMed ID: 29400979
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
