236 related articles for article (PubMed ID: 31891483)
1. Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiO
Qian K; Han X; Li H; Chen T; Lee PS
ACS Appl Mater Interfaces; 2020 Jan; 12(4):4579-4585. PubMed ID: 31891483
[TBL] [Abstract][Full Text] [Related]
2. Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory.
Qian K; Tay RY; Lin MF; Chen J; Li H; Lin J; Wang J; Cai G; Nguyen VC; Teo EH; Chen T; Lee PS
ACS Nano; 2017 Feb; 11(2):1712-1718. PubMed ID: 28112907
[TBL] [Abstract][Full Text] [Related]
3. Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.
Chen KH; Cheng CM; Chen ML; Pan YY
Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839057
[TBL] [Abstract][Full Text] [Related]
4. Bipolar Switching Characteristics of Transparent WO
Kim J; Park J; Kim S
Materials (Basel); 2022 Oct; 15(20):. PubMed ID: 36295253
[TBL] [Abstract][Full Text] [Related]
5. Critical role of a double-layer configuration in solution-based unipolar resistive switching memories.
Carlos E; Kiazadeh A; Deuermeier J; Branquinho R; Martins R; Fortunato E
Nanotechnology; 2018 Aug; 29(34):345206. PubMed ID: 29863489
[TBL] [Abstract][Full Text] [Related]
6. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.
Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
Nanoscale Res Lett; 2016 Dec; 11(1):52. PubMed ID: 26831690
[TBL] [Abstract][Full Text] [Related]
7. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.
Ambrosi E; Bricalli A; Laudato M; Ielmini D
Faraday Discuss; 2019 Feb; 213(0):87-98. PubMed ID: 30364922
[TBL] [Abstract][Full Text] [Related]
8. Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn-Sn-O ReRAMs.
Kim TW; Cho WJ
J Nanosci Nanotechnol; 2019 Oct; 19(10):6099-6105. PubMed ID: 31026916
[TBL] [Abstract][Full Text] [Related]
9. Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.
Qian K; Cai G; Nguyen VC; Chen T; Lee PS
ACS Appl Mater Interfaces; 2016 Oct; 8(41):27885-27891. PubMed ID: 27704752
[TBL] [Abstract][Full Text] [Related]
10. Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al
Park J; Huh D; Son S; Kim W; Ju S; Lee H
Glob Chall; 2022 Jul; 6(7):2100118. PubMed ID: 35860392
[TBL] [Abstract][Full Text] [Related]
11. Resistance Switching Characteristics Induced by O
Chen PH; Chang TC; Chang KC; Tsai TM; Pan CH; Chen MC; Su YT; Lin CY; Tseng YT; Huang HC; Wu H; Deng N; Qian H; Sze SM
ACS Appl Mater Interfaces; 2017 Jan; 9(3):3149-3155. PubMed ID: 28072511
[TBL] [Abstract][Full Text] [Related]
12. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
Nanoscale Res Lett; 2016 Dec; 11(1):224. PubMed ID: 27117634
[TBL] [Abstract][Full Text] [Related]
13. Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion.
Kumar D; Aluguri R; Chand U; Tseng TY
Nanotechnology; 2018 Mar; 29(12):125202. PubMed ID: 29350624
[TBL] [Abstract][Full Text] [Related]
14. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films.
Lin KW; Wang TY; Chang YC
Polymers (Basel); 2021 Feb; 13(5):. PubMed ID: 33652819
[TBL] [Abstract][Full Text] [Related]
15. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB
J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090
[TBL] [Abstract][Full Text] [Related]
16. Transparent resistive switching memory using aluminum oxide on a flexible substrate.
Yeom SW; Shin SC; Kim TY; Ha HJ; Lee YH; Shim JW; Ju BK
Nanotechnology; 2016 Feb; 27(7):07LT01. PubMed ID: 26763473
[TBL] [Abstract][Full Text] [Related]
17. Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories.
Gao H; Yang Y; Wang Y; Chen L; Wang J; Yuan G; Liu JM
ACS Appl Mater Interfaces; 2019 Sep; 11(38):35169-35176. PubMed ID: 31482709
[TBL] [Abstract][Full Text] [Related]
18. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
Lee KJ; Wang LW; Chiang TK; Wang YH
Materials (Basel); 2015 Oct; 8(10):7191-7198. PubMed ID: 28793630
[TBL] [Abstract][Full Text] [Related]
19. Transparent amorphous strontium titanate resistive memories with transient photo-response.
Ahmed T; Walia S; Kim J; Nili H; Ramanathan R; Mayes ELH; Lau DWM; Kavehei O; Bansal V; Bhaskaran M; Sriram S
Nanoscale; 2017 Oct; 9(38):14690-14702. PubMed ID: 28944813
[TBL] [Abstract][Full Text] [Related]
20. Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO
Mahata C; Kang M; Kim S
Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33092042
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]