240 related articles for article (PubMed ID: 31963426)
1. High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices.
Min SJ; Shin MC; Thi Nguyen N; Oh JM; Koo SM
Materials (Basel); 2020 Jan; 13(2):. PubMed ID: 31963426
[TBL] [Abstract][Full Text] [Related]
2. Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes.
Min SJ; Schweitz MA; Nguyen NT; Koo SM
J Nanosci Nanotechnol; 2021 Mar; 21(3):2001-2004. PubMed ID: 33404483
[TBL] [Abstract][Full Text] [Related]
3. 60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes.
Pascu R; Pristavu G; Brezeanu G; Draghici F; Godignon P; Romanitan C; Serbanescu M; Tulbure A
Sensors (Basel); 2021 Jan; 21(3):. PubMed ID: 33572603
[TBL] [Abstract][Full Text] [Related]
4. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals.
Shtepliuk I; Eriksson J; Khranovskyy V; Iakimov T; Lloyd Spetz A; Yakimova R
Beilstein J Nanotechnol; 2016; 7():1800-1814. PubMed ID: 28144530
[TBL] [Abstract][Full Text] [Related]
5. Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes.
Kim DH; Min SJ; Oh JM; Koo SM
Materials (Basel); 2020 Sep; 13(19):. PubMed ID: 33003505
[TBL] [Abstract][Full Text] [Related]
6. High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications.
Mandal KC; Chaudhuri SK; Nag R
Micromachines (Basel); 2023 Jul; 14(8):. PubMed ID: 37630068
[TBL] [Abstract][Full Text] [Related]
7. Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.
Jung SW; Shin MC; Schweitz MA; Oh JM; Koo SM
Materials (Basel); 2021 Feb; 14(3):. PubMed ID: 33540719
[TBL] [Abstract][Full Text] [Related]
8. The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes.
Xu H; Ren N; Wu J; Zhu Z; Guo Q; Sheng K
Materials (Basel); 2021 Jan; 14(3):. PubMed ID: 33572683
[TBL] [Abstract][Full Text] [Related]
9. Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces.
Sano Y; Shirasawa Y; Okamoto T; Yamauchi K
J Nanosci Nanotechnol; 2011 Apr; 11(4):2809-13. PubMed ID: 21776636
[TBL] [Abstract][Full Text] [Related]
10. Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications.
Chen KY; Tripathy PK; Mondal K; Zhang H; Couet A; Andrews JB
Nano Lett; 2023 Apr; 23(7):2816-2821. PubMed ID: 37011402
[TBL] [Abstract][Full Text] [Related]
11. 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments.
Draghici F; Brezeanu G; Pristavu G; Pascu R; Badila M; Pribeanu A; Ceuca E
Sensors (Basel); 2019 May; 19(10):. PubMed ID: 31137664
[TBL] [Abstract][Full Text] [Related]
12. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes.
Lee S; Lee J; Kang TY; Kyoung S; Jung ES; Kim KH
J Nanosci Nanotechnol; 2015 Nov; 15(11):9308-13. PubMed ID: 26726688
[TBL] [Abstract][Full Text] [Related]
13. Al₂O₃-Based a-IGZO Schottky Diodes for Temperature Sensing.
Guo Q; Lu F; Tan Q; Zhou T; Xiong J; Zhang W
Sensors (Basel); 2019 Jan; 19(2):. PubMed ID: 30634474
[TBL] [Abstract][Full Text] [Related]
14. Materials and Processes for Schottky Contacts on Silicon Carbide.
Vivona M; Giannazzo F; Roccaforte F
Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009445
[TBL] [Abstract][Full Text] [Related]
15. Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions.
Li J; Meng C; Yu L; Li Y; Yan F; Han P; Ji X
Micromachines (Basel); 2020 Jun; 11(6):. PubMed ID: 32599702
[TBL] [Abstract][Full Text] [Related]
16. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.
Singh A; Uddin A; Sudarshan T; Koley G
Small; 2014 Apr; 10(8):1555-65. PubMed ID: 24376071
[TBL] [Abstract][Full Text] [Related]
17. TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.
Das A; Duttagupta SP
Radiat Prot Dosimetry; 2015 Dec; 167(4):443-52. PubMed ID: 25634901
[TBL] [Abstract][Full Text] [Related]
18. Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.
Lioliou G; Mazzillo MC; Sciuto A; Barnett AM
Opt Express; 2015 Aug; 23(17):21657-70. PubMed ID: 26368145
[TBL] [Abstract][Full Text] [Related]
19. Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications.
Alathbah M
Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677063
[TBL] [Abstract][Full Text] [Related]
20. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.
Kumar A; Kashid R; Ghosh A; Kumar V; Singh R
ACS Appl Mater Interfaces; 2016 Mar; 8(12):8213-23. PubMed ID: 26963627
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
