These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

363 related articles for article (PubMed ID: 31968427)

  • 1. Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with
    Chen YM; Wu CH; Chang KM; Zhang YX; Xu N; Yu TY; Chin A
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4110-4113. PubMed ID: 31968427
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment.
    Wu CH; Chang KM; Chen YM; Zhang YX; Tan YH
    J Nanosci Nanotechnol; 2019 Apr; 19(4):2306-2309. PubMed ID: 30486988
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Study of
    Wu CH; Chang KM; Chen YM; Zhang YX; Tan YH
    J Nanosci Nanotechnol; 2019 Apr; 19(4):2310-2313. PubMed ID: 30486989
    [TBL] [Abstract][Full Text] [Related]  

  • 4. The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.
    Wu CH; Huang BW; Chang KM; Wang SJ; Lin JH; Hsu JM
    J Nanosci Nanotechnol; 2016 Jun; 16(6):6044-8. PubMed ID: 27427669
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.
    Wu CH; Chang KM; Chen YM; Huang BW; Zhang YX; Wang SJ
    J Nanosci Nanotechnol; 2018 Mar; 18(3):1917-1921. PubMed ID: 29448683
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O
    Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC
    Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH; Cho WJ
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Amorphous IGZO TFT with High Mobility of ∼70 cm
    Sheng J; Hong T; Lee HM; Kim K; Sasase M; Kim J; Hosono H; Park JS
    ACS Appl Mater Interfaces; 2019 Oct; 11(43):40300-40309. PubMed ID: 31584254
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.
    Li ZY; Song SM; Wang WX; Gong JH; Tong Y; Dai MJ; Lin SS; Yang TL; Sun H
    Nanotechnology; 2022 Oct; 34(2):. PubMed ID: 36219884
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition.
    Wu CH; Chang KM; Chen YM; Huang BW; Zhang YX; Wang SJ; Hsu JM
    J Nanosci Nanotechnol; 2018 Mar; 18(3):2054-2057. PubMed ID: 29448711
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effects of
    Zhang YX; Wu CH; Chang KM; Chen YM; Xu N; Tsai KC
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4069-4072. PubMed ID: 31968422
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y; Xie H; Dong C
    Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
    Everaerts K; Zeng L; Hennek JW; Camacho DI; Jariwala D; Bedzyk MJ; Hersam MC; Marks TJ
    ACS Appl Mater Interfaces; 2013 Nov; 5(22):11884-93. PubMed ID: 24187917
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by
    Wu CH; Mohanty SK; Huang BW; Chang KM; Wang SJ; Ma KJ
    Nanotechnology; 2023 Feb; 34(17):. PubMed ID: 36696686
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Role of
    Prasad OK; Mohanty SK; Wu CH; Yu TY; Chang KM
    Nanotechnology; 2021 Jul; 32(39):. PubMed ID: 34144544
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.
    Lestari AD; Putri M; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2020 Jan; 20(1):252-256. PubMed ID: 31383163
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Silicon germanium photo-blocking layers for a-IGZO based industrial display.
    Kang SH; Kang S; Park SC; Park JB; Jung Y; Hong BH
    Sci Rep; 2018 Dec; 8(1):17533. PubMed ID: 30510247
    [TBL] [Abstract][Full Text] [Related]  

  • 19. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Solution-Based Indium-Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide.
    Jeon W; Choi P; Park A; Lee D; Choi D; Lee S; Choi B
    J Nanosci Nanotechnol; 2020 Nov; 20(11):6643-6647. PubMed ID: 32604489
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 19.