These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

212 related articles for article (PubMed ID: 31968494)

  • 1. Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors.
    Lee GH; Park AH; Lim JH; Lee CH; Jeon DW; Kim YB; Lee J; Yang JW; Suh EK; Seo TH
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4450-4453. PubMed ID: 31968494
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by
    Siddique A; Ahmed R; Anderson J; Holtz M; Piner EL
    ACS Appl Mater Interfaces; 2021 Apr; 13(15):18264-18273. PubMed ID: 33823581
    [No Abstract]   [Full Text] [Related]  

  • 3. Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.
    Guo H; Li Y; Yu X; Zhou J; Kong Y
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144109
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release Layer.
    Motala MJ; Blanton EW; Hilton A; Heller E; Muratore C; Burzynski K; Brown JL; Chabak K; Durstock M; Snure M; Glavin NR
    ACS Appl Mater Interfaces; 2020 May; 12(19):21837-21844. PubMed ID: 32295338
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Comprehensive Comparison of MOCVD- and LPCVD-SiN
    Deng L; Zhou L; Lu H; Yang L; Yu Q; Zhang M; Wu M; Hou B; Ma X; Hao Y
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004961
    [TBL] [Abstract][Full Text] [Related]  

  • 6. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
    Hong S; Rana Au; Heo JW; Kim HS
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 8. AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO
    Lin YS; Lu CC
    Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374767
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.
    Chen KM; Lin CJ; Chuang CW; Pai HC; Chang EY; Huang GW
    Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241634
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.
    Im KS; Mallem SPR; Choi JS; Hwang YM; Roh JS; An SJ; Lee JH
    Nanomaterials (Basel); 2022 Feb; 12(4):. PubMed ID: 35214971
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhanced Operational Characteristics Attained by Applying HfO
    Choi JH; Kang WS; Kim D; Kim JH; Lee JH; Kim KY; Min BG; Kang DM; Kim HS
    Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374686
    [TBL] [Abstract][Full Text] [Related]  

  • 12. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
    Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
    Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.
    Sharma N; Periasamy C; Chaturvedi N
    J Nanosci Nanotechnol; 2018 Jul; 18(7):4580-4587. PubMed ID: 29442634
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs.
    Ji K; Cui X; Chen J; Guo Q; Jiang B; Wang B; Sun W; Hu W; Hua Q
    Nanotechnology; 2021 Jun; 32(35):. PubMed ID: 34010814
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment.
    Yoon YJ; Lee JS; Suk JK; Kang IM; Lee JH; Lee EJ; Kim DS
    Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442485
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors.
    Lin YS; Lin SF
    Micromachines (Basel); 2020 Dec; 12(1):. PubMed ID: 33374110
    [TBL] [Abstract][Full Text] [Related]  

  • 17. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.
    Liu XY; Zhao SX; Zhang LQ; Huang HF; Shi JS; Zhang CM; Lu HL; Wang PF; Zhang DW
    Nanoscale Res Lett; 2015; 10():109. PubMed ID: 25852404
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
    Kang SC; Jung HW; Chang SJ; Kim SM; Lee SK; Lee BH; Kim H; Noh YS; Lee SH; Kim SI; Ahn HK; Lim JW
    Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33114425
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications.
    Moon S; Chang SJ; Kim Y; Okello OFN; Kim J; Kim J; Jung HW; Ahn HK; Kim DS; Choi SY; Lee J; Lim JW; Kim JK
    ACS Appl Mater Interfaces; 2021 Dec; 13(49):59440-59449. PubMed ID: 34792331
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
    Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
    Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.