These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

110 related articles for article (PubMed ID: 31988430)

  • 21. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
    Liu W; Zhao DG; Jiang DS; Chen P; Liu ZS; Zhu JJ; Shi M; Zhao DM; Li X; Liu JP; Zhang SM; Wang H; Yang H; Zhang YT; Du GT
    Opt Express; 2015 Jun; 23(12):15935-43. PubMed ID: 26193570
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.
    Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP
    ACS Appl Mater Interfaces; 2017 Oct; 9(41):36417-36422. PubMed ID: 28960058
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity.
    En-Nadir R; Basyooni-M Kabatas MA; Tihtih M; Belaid W; Ez-Zejjari I; Majda EG; El Ghazi H; Sali A; Zorkani I
    Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947663
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires.
    Johar MA; Song HG; Waseem A; Kang JH; Ha JS; Cho YH; Ryu SW
    Nanoscale; 2019 Jun; 11(22):10932-10943. PubMed ID: 31139802
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.
    Kowsz SJ; Young EC; Yonkee BP; Pynn CD; Farrell RM; Speck JS; DenBaars SP; Nakamura S
    Opt Express; 2017 Feb; 25(4):3841-3849. PubMed ID: 28241595
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Electroluminescence and temperature-dependent time-resolved photoluminescence of monolithically integrated triple-wavelength InGaN-based LED.
    Zhao X; Zhou S
    Opt Lett; 2023 Dec; 48(24):6492-6495. PubMed ID: 38099781
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells.
    Li X; Liu J; Su X; Huang S; Tian A; Zhou W; Jiang L; Ikeda M; Yang H
    Materials (Basel); 2021 Apr; 14(8):. PubMed ID: 33918874
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Study of the Luminescence Decay of a Semipolar Green Light-Emitting Diode for Visible Light Communications by Time-Resolved Electroluminescence.
    Holly Haggar JI; Ghataora SS; Trinito V; Bai J; Wang T
    ACS Photonics; 2022 Jul; 9(7):2378-2384. PubMed ID: 35880070
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells.
    Hao X; Zhang X; Sun B; Yin D; Dong H; Wang J; Huang B; Xu Y; Shan H; Ma S; Chen C; Xu B
    ACS Appl Mater Interfaces; 2022 Dec; 14(50):55762-55769. PubMed ID: 36509550
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wells.
    Bercha A; Trzeciakowski W; Muziol G; Tomm JW; Suski T
    Opt Express; 2023 Jan; 31(2):3227-3236. PubMed ID: 36785319
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires.
    Alhodaib A; Noori YJ; Carrington PJ; Sanchez AM; Thompson MD; Young RJ; Krier A; Marshall ARJ
    Nano Lett; 2018 Jan; 18(1):235-240. PubMed ID: 29191016
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Photoluminescence of InGaN-based red multiple quantum wells.
    Hou X; Fan S; Iida D; Mei Y; Zhang B; Ohkawa K
    Opt Express; 2021 Sep; 29(19):30237-30243. PubMed ID: 34614750
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells.
    Mickevičius J; Jurkevičius J; Tamulaitis G; Shur MS; Shatalov M; Yang J; Gaska R
    Opt Express; 2014 Mar; 22 Suppl 2():A491-7. PubMed ID: 24922258
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.
    Roble AA; Patra SK; Massabuau F; Frentrup M; Leontiadou MA; Dawson P; Kappers MJ; Oliver RA; Graham DM; Schulz S
    Sci Rep; 2019 Dec; 9(1):18862. PubMed ID: 31827118
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Lower threshold current density of GaN-based blue laser diodes by suppressing the nonradiative recombination in a multiple quantum well.
    Liang F; Zhao D; Liu Z; Chen P; Yang J
    Opt Express; 2022 Aug; 30(17):31044-31057. PubMed ID: 36242196
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire.
    Song J; Choi J; Xiong K; Xie Y; Cha JJ; Han J
    ACS Appl Mater Interfaces; 2017 Apr; 9(16):14088-14092. PubMed ID: 28361536
    [TBL] [Abstract][Full Text] [Related]  

  • 37. State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods.
    Evropeitsev EA; Kazanov DR; Robin Y; Smirnov AN; Eliseyev IA; Davydov VY; Toropov AA; Nitta S; Shubina TV; Amano H
    Sci Rep; 2020 Nov; 10(1):19048. PubMed ID: 33149244
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy.
    Shen J; Zheng Y; Xu Z; Yu Y; Gao F; Zhang S; Gan Y; Li G
    Nanoscale; 2018 Nov; 10(46):21951-21959. PubMed ID: 30444225
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
    Huang YY; Chen LY; Chang CH; Sun YH; Cheng YW; Ke MY; Lu YH; Kuo HC; Huang J
    Nanotechnology; 2011 Jan; 22(4):045202. PubMed ID: 21157011
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Quantitative study of electron tunneling dynamics in asymmetric coupled InGaN/GaN quantum wells.
    Weng G; Liu Y; Chen S; Ito T; Hu X; Zhao C; Liu J; Chu J; Akiyama H
    Appl Opt; 2020 Jul; 59(20):6231-6236. PubMed ID: 32672772
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.