533 related articles for article (PubMed ID: 31997981)
21. Multi-Level Resistive Al/Ga
Wang LW; Huang CW; Lee KJ; Chu SY; Wang YH
Nanomaterials (Basel); 2023 Jun; 13(12):. PubMed ID: 37368281
[TBL] [Abstract][Full Text] [Related]
22. Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing.
Zanotti T; Pavan P; Puglisi FM
Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683294
[TBL] [Abstract][Full Text] [Related]
23. An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory.
Kaniselvan M; Luisier M; Mladenović M
ACS Nano; 2023 May; 17(9):8281-8292. PubMed ID: 36947862
[TBL] [Abstract][Full Text] [Related]
24. Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications.
Linn E; Menzel S; Ferch S; Waser R
Nanotechnology; 2013 Sep; 24(38):384008. PubMed ID: 23999250
[TBL] [Abstract][Full Text] [Related]
25. Resistive Memory Devices at the Thinnest Limit: Progress and Challenges.
Li XD; Chen NK; Wang BQ; Niu M; Xu M; Miao X; Li XB
Adv Mater; 2024 Apr; 36(15):e2307951. PubMed ID: 38197585
[TBL] [Abstract][Full Text] [Related]
26. Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications.
Abbas H; Li J; Ang DS
Micromachines (Basel); 2022 Apr; 13(5):. PubMed ID: 35630191
[TBL] [Abstract][Full Text] [Related]
27. Graphene-based RRAM devices for neural computing.
R RT; Das RR; Reghuvaran C; James A
Front Neurosci; 2023; 17():1253075. PubMed ID: 37886675
[TBL] [Abstract][Full Text] [Related]
28. Multi-Level Resistive Switching in SnSe/SrTiO
Ho TL; Ding K; Lyapunov N; Suen CH; Wong LW; Zhao J; Yang M; Zhou X; Dai JY
Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35807964
[TBL] [Abstract][Full Text] [Related]
29. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.
Khot AC; Dongale TD; Nirmal KA; Sung JH; Lee HJ; Nikam RD; Kim TG
ACS Appl Mater Interfaces; 2022 Mar; 14(8):10546-10557. PubMed ID: 35179364
[TBL] [Abstract][Full Text] [Related]
30. Sign backpropagation: An on-chip learning algorithm for analog RRAM neuromorphic computing systems.
Zhang Q; Wu H; Yao P; Zhang W; Gao B; Deng N; Qian H
Neural Netw; 2018 Dec; 108():217-223. PubMed ID: 30216871
[TBL] [Abstract][Full Text] [Related]
31. Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks.
Guo Y; Wu H; Gao B; Qian H
Front Neurosci; 2019; 13():812. PubMed ID: 31447634
[TBL] [Abstract][Full Text] [Related]
32. Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode.
Alimkhanuly B; Kim S; Kim LW; Lee S
Nanomaterials (Basel); 2020 Aug; 10(9):. PubMed ID: 32825304
[TBL] [Abstract][Full Text] [Related]
33. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.
Wang R; Shi T; Zhang X; Wang W; Wei J; Lu J; Zhao X; Wu Z; Cao R; Long S; Liu Q; Liu M
Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373122
[TBL] [Abstract][Full Text] [Related]
34. Robust Ag/ZrO
Yan X; Qin C; Lu C; Zhao J; Zhao R; Ren D; Zhou Z; Wang H; Wang J; Zhang L; Li X; Pei Y; Wang G; Zhao Q; Wang K; Xiao Z; Li H
ACS Appl Mater Interfaces; 2019 Dec; 11(51):48029-48038. PubMed ID: 31789034
[TBL] [Abstract][Full Text] [Related]
35. Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.
Song MK; Kang JH; Zhang X; Ji W; Ascoli A; Messaris I; Demirkol AS; Dong B; Aggarwal S; Wan W; Hong SM; Cardwell SG; Boybat I; Seo JS; Lee JS; Lanza M; Yeon H; Onen M; Li J; Yildiz B; Del Alamo JA; Kim S; Choi S; Milano G; Ricciardi C; Alff L; Chai Y; Wang Z; Bhaskaran H; Hersam MC; Strukov D; Wong HP; Valov I; Gao B; Wu H; Tetzlaff R; Sebastian A; Lu W; Chua L; Yang JJ; Kim J
ACS Nano; 2023 Jul; 17(13):11994-12039. PubMed ID: 37382380
[TBL] [Abstract][Full Text] [Related]
36. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM.
Lee J; Schell W; Zhu X; Kioupakis E; Lu WD
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11579-11586. PubMed ID: 30816044
[TBL] [Abstract][Full Text] [Related]
37. Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.
Ting YH; Chen JY; Huang CW; Huang TK; Hsieh CY; Wu WW
Small; 2018 Feb; 14(6):. PubMed ID: 29205791
[TBL] [Abstract][Full Text] [Related]
38. Reconfigurable Resistive Switching in VO
Kunwar S; Cucciniello N; Mazza AR; Zhang D; Santillan L; Freiman B; Roy P; Jia Q; MacManus-Driscoll JL; Wang H; Nie W; Chen A
ACS Appl Mater Interfaces; 2024 Apr; 16(15):19103-19111. PubMed ID: 38578811
[TBL] [Abstract][Full Text] [Related]
39. Memristive Non-Volatile Memory Based on Graphene Materials.
Shen Z; Zhao C; Qi Y; Mitrovic IZ; Yang L; Wen J; Huang Y; Li P; Zhao C
Micromachines (Basel); 2020 Mar; 11(4):. PubMed ID: 32218324
[TBL] [Abstract][Full Text] [Related]
40. Investigation of resistance switching in SiO
Sadi T; Mehonic A; Montesi L; Buckwell M; Kenyon A; Asenov A
J Phys Condens Matter; 2018 Feb; 30(8):084005. PubMed ID: 29334362
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
