These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

392 related articles for article (PubMed ID: 31997981)

  • 101. Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full-Adder Functions with Memristor Crossbar for Beyond von Neumann In-Memory Computing.
    Song Y; Wang X; Wu Q; Yang F; Wang C; Wang M; Miao X
    Adv Sci (Weinh); 2022 May; 9(15):e2200036. PubMed ID: 35343097
    [TBL] [Abstract][Full Text] [Related]  

  • 102. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.
    Han ST; Zhou Y; Chen B; Wang C; Zhou L; Yan Y; Zhuang J; Sun Q; Zhang H; Roy VA
    Small; 2016 Jan; 12(3):390-6. PubMed ID: 26578160
    [TBL] [Abstract][Full Text] [Related]  

  • 103. Nanobatteries in redox-based resistive switches require extension of memristor theory.
    Valov I; Linn E; Tappertzhofen S; Schmelzer S; van den Hurk J; Lentz F; Waser R
    Nat Commun; 2013; 4():1771. PubMed ID: 23612312
    [TBL] [Abstract][Full Text] [Related]  

  • 104. Ti
    Khot AC; Dongale TD; Park JH; Kesavan AV; Kim TG
    ACS Appl Mater Interfaces; 2021 Feb; 13(4):5216-5227. PubMed ID: 33397081
    [TBL] [Abstract][Full Text] [Related]  

  • 105. Physical and chemical mechanisms in oxide-based resistance random access memory.
    Chang KC; Chang TC; Tsai TM; Zhang R; Hung YC; Syu YE; Chang YF; Chen MC; Chu TJ; Chen HL; Pan CH; Shih CC; Zheng JC; Sze SM
    Nanoscale Res Lett; 2015; 10():120. PubMed ID: 25873842
    [TBL] [Abstract][Full Text] [Related]  

  • 106. Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching.
    Jeon J; Eom K; Lee M; Kim S; Lee H
    Small; 2023 Sep; 19(37):e2301452. PubMed ID: 37150870
    [TBL] [Abstract][Full Text] [Related]  

  • 107. The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.
    Rahaman SZ; Lin YD; Lee HY; Chen YS; Chen PS; Chen WS; Hsu CH; Tsai KH; Tsai MJ; Wang PH
    Langmuir; 2017 May; 33(19):4654-4665. PubMed ID: 28420238
    [TBL] [Abstract][Full Text] [Related]  

  • 108. A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.
    Sun B; Zhang X; Zhou G; Yu T; Mao S; Zhu S; Zhao Y; Xia Y
    J Colloid Interface Sci; 2018 Jun; 520():19-24. PubMed ID: 29525500
    [TBL] [Abstract][Full Text] [Related]  

  • 109. A memristor-based nonvolatile latch circuit.
    Robinett W; Pickett M; Borghetti J; Xia Q; Snider GS; Medeiros-Ribeiro G; Williams RS
    Nanotechnology; 2010 Jun; 21(23):235203. PubMed ID: 20472941
    [TBL] [Abstract][Full Text] [Related]  

  • 110. Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory.
    Celano U; Goux L; Degraeve R; Fantini A; Richard O; Bender H; Jurczak M; Vandervorst W
    Nano Lett; 2015 Dec; 15(12):7970-5. PubMed ID: 26523952
    [TBL] [Abstract][Full Text] [Related]  

  • 111. A Flexible Memristor Model With Electronic Resistive Switching Memory Behavior and Its Application in Spiking Neural Network.
    Ji X; Lai CS; Zhou G; Dong Z; Qi D; Lai LL
    IEEE Trans Nanobioscience; 2023 Jan; 22(1):52-62. PubMed ID: 35171775
    [TBL] [Abstract][Full Text] [Related]  

  • 112. Reservoir Computing with Charge-Trap Memory Based on a MoS
    Farronato M; Mannocci P; Melegari M; Ricci S; Compagnoni CM; Ielmini D
    Adv Mater; 2023 Sep; 35(37):e2205381. PubMed ID: 36222391
    [TBL] [Abstract][Full Text] [Related]  

  • 113. Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack.
    Wu X; Pey KL; Raghavan N; Liu WH; Li X; Bai P; Zhang G; Bosman M
    Nanotechnology; 2011 Nov; 22(45):455702. PubMed ID: 21992823
    [TBL] [Abstract][Full Text] [Related]  

  • 114. Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability.
    Wang Z; Xiao W; Yang H; Zhang S; Zhang Y; Sun K; Wang T; Fu Y; Wang Q; Zhang J; Hasegawa T; He D
    ACS Appl Mater Interfaces; 2022 Jan; 14(1):1557-1567. PubMed ID: 34957821
    [TBL] [Abstract][Full Text] [Related]  

  • 115. A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States.
    Nandakumar SR; Minvielle M; Nagar S; Dubourdieu C; Rajendran B
    Nano Lett; 2016 Mar; 16(3):1602-8. PubMed ID: 26849776
    [TBL] [Abstract][Full Text] [Related]  

  • 116. Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application.
    Zhao X; Niu J; Yang Y; Xiao X; Chen R; Wu Z; Zhang Y; Lv H; Long S; Liu Q; Jiang C; Liu M
    Nanotechnology; 2020 Apr; 31(14):144002. PubMed ID: 31860888
    [TBL] [Abstract][Full Text] [Related]  

  • 117. On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits.
    Cisternas Ferri A; Rapoport A; Fierens PI; Patterson GA; Miranda E; Suñé J
    Materials (Basel); 2019 Jul; 12(14):. PubMed ID: 31337071
    [TBL] [Abstract][Full Text] [Related]  

  • 118. Organic and hybrid resistive switching materials and devices.
    Gao S; Yi X; Shang J; Liu G; Li RW
    Chem Soc Rev; 2019 Mar; 48(6):1531-1565. PubMed ID: 30398508
    [TBL] [Abstract][Full Text] [Related]  

  • 119. Resistive switching of Pt/TiO
    Khiat A; Cortese S; Serb A; Prodromakis T
    Nanotechnology; 2017 Jan; 28(2):025303. PubMed ID: 27924782
    [TBL] [Abstract][Full Text] [Related]  

  • 120. Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar.
    Li Y; Zhou YX; Xu L; Lu K; Wang ZR; Duan N; Jiang L; Cheng L; Chang TC; Chang KC; Sun HJ; Xue KH; Miao XS
    ACS Appl Mater Interfaces; 2016 Dec; 8(50):34559-34567. PubMed ID: 27998150
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 20.