These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
168 related articles for article (PubMed ID: 32033092)
21. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. Gong C; Colombo L; Wallace RM; Cho K Nano Lett; 2014; 14(4):1714-20. PubMed ID: 24660782 [TBL] [Abstract][Full Text] [Related]
22. Direct Optoelectronic Imaging of 2D Semiconductor-3D Metal Buried Interfaces. Jo K; Kumar P; Orr J; Anantharaman SB; Miao J; Motala MJ; Bandyopadhyay A; Kisslinger K; Muratore C; Shenoy VB; Stach EA; Glavin NR; Jariwala D ACS Nano; 2021 Mar; 15(3):5618-5630. PubMed ID: 33683881 [TBL] [Abstract][Full Text] [Related]
23. Tuning Electronic Structure of Single Layer MoS Chen Y; Huang S; Ji X; Adepalli K; Yin K; Ling X; Wang X; Xue J; Dresselhaus M; Kong J; Yildiz B ACS Nano; 2018 Mar; 12(3):2569-2579. PubMed ID: 29397692 [TBL] [Abstract][Full Text] [Related]
24. Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS Kerelsky A; Nipane A; Edelberg D; Wang D; Zhou X; Motmaendadgar A; Gao H; Xie S; Kang K; Park J; Teherani J; Pasupathy A Nano Lett; 2017 Oct; 17(10):5962-5968. PubMed ID: 28920701 [TBL] [Abstract][Full Text] [Related]
25. Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces. Yang HI; Coyle DJ; Wurch M; Yadav PR; Valentin MD; Neupane MR; Almeida K; Bartels L ACS Appl Mater Interfaces; 2021 Jul; 13(29):35105-35112. PubMed ID: 34259497 [TBL] [Abstract][Full Text] [Related]
26. MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. Chuang S; Battaglia C; Azcatl A; McDonnell S; Kang JS; Yin X; Tosun M; Kapadia R; Fang H; Wallace RM; Javey A Nano Lett; 2014 Mar; 14(3):1337-42. PubMed ID: 24568656 [TBL] [Abstract][Full Text] [Related]
28. A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS Yang Z; Kim C; Lee KY; Lee M; Appalakondaiah S; Ra CH; Watanabe K; Taniguchi T; Cho K; Hwang E; Hone J; Yoo WJ Adv Mater; 2019 Jun; 31(25):e1808231. PubMed ID: 31066475 [TBL] [Abstract][Full Text] [Related]
29. Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo Jeon J; Park Y; Choi S; Lee J; Lim SS; Lee BH; Song YJ; Cho JH; Jang YH; Lee S ACS Nano; 2018 Jan; 12(1):338-346. PubMed ID: 29298050 [TBL] [Abstract][Full Text] [Related]
30. Theoretical analysis of thermal boundary conductance of MoS Ong ZY; Cai Y; Zhang G; Zhang YW Nanotechnology; 2020 Dec; ():. PubMed ID: 33296879 [TBL] [Abstract][Full Text] [Related]
32. MoS Krishnaprasad A; Dev D; Han SS; Shen Y; Chung HS; Bae TS; Yoo C; Jung Y; Lanza M; Roy T ACS Nano; 2022 Feb; 16(2):2866-2876. PubMed ID: 35143159 [TBL] [Abstract][Full Text] [Related]
33. Influence of MoS Li M; Lan F; Yang W; Ji Z; Zhang Y; Xi N; Xin X; Jin X; Li G Nanotechnology; 2020 Sep; 31(39):395713. PubMed ID: 32662448 [TBL] [Abstract][Full Text] [Related]
34. Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials. Bark H; Choi Y; Jung J; Kim JH; Kwon H; Lee J; Lee Z; Cho JH; Lee C Nanoscale; 2018 Jan; 10(3):1056-1062. PubMed ID: 29266157 [TBL] [Abstract][Full Text] [Related]
35. Improved Contacts and Device Performance in MoS Andrews K; Bowman A; Rijal U; Chen PY; Zhou Z ACS Nano; 2020 May; 14(5):6232-6241. PubMed ID: 32320204 [TBL] [Abstract][Full Text] [Related]
36. Theoretical analysis of thermal boundary conductance of MoS Ong ZY; Cai Y; Zhang G; Zhang YW Nanotechnology; 2021 Jan; 32(13):135402. PubMed ID: 33410419 [TBL] [Abstract][Full Text] [Related]
37. Schottky Barrier Height of Pd/MoS Dong H; Gong C; Addou R; McDonnell S; Azcatl A; Qin X; Wang W; Wang W; Hinkle CL; Wallace RM ACS Appl Mater Interfaces; 2017 Nov; 9(44):38977-38983. PubMed ID: 29035026 [TBL] [Abstract][Full Text] [Related]
38. Hydrophilic Character of Single-Layer MoS Tumino F; Grazianetti C; Martella C; Ruggeri M; Russo V; Li Bassi A; Molle A; Casari CS J Phys Chem C Nanomater Interfaces; 2021 May; 125(17):9479-9485. PubMed ID: 34055127 [TBL] [Abstract][Full Text] [Related]
39. Modulation of Contact Resistance of Dual-Gated MoS Ngo TD; Huynh T; Jung H; Ali F; Jeon J; Choi MS; Yoo WJ Adv Sci (Weinh); 2023 Jul; 10(21):e2301400. PubMed ID: 37144526 [TBL] [Abstract][Full Text] [Related]
40. Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact. Kim SH; Han KH; Park E; Kim SG; Yu HY ACS Appl Mater Interfaces; 2019 Sep; 11(37):34084-34090. PubMed ID: 31429263 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]