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7. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. Lee GH; Yu YJ; Cui X; Petrone N; Lee CH; Choi MS; Lee DY; Lee C; Yoo WJ; Watanabe K; Taniguchi T; Nuckolls C; Kim P; Hone J ACS Nano; 2013 Sep; 7(9):7931-6. PubMed ID: 23924287 [TBL] [Abstract][Full Text] [Related]
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