These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

491 related articles for article (PubMed ID: 32126639)

  • 41. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
    Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
    ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment.
    Chen HC; Kuo CW; Chang TC; Lai WC; Chen PH; Chen GF; Huang SP; Chen JJ; Zhou KJ; Shih CC; Tsao YC; Huang HC; Sze SM
    ACS Appl Mater Interfaces; 2019 Oct; 11(43):40196-40203. PubMed ID: 31573173
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
    ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
    Moon CJ; Kim HS
    ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
    [TBL] [Abstract][Full Text] [Related]  

  • 45. 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.
    Park SY; Choi Y; Seo YH; Kim H; Lee DH; Truong PL; Jeon Y; Yoo H; Kwon SJ; Lee D; Cho ES
    Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258222
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.
    Hu S; Ning H; Lu K; Fang Z; Li Y; Yao R; Xu M; Wang L; Peng J; Lu X
    Nanomaterials (Basel); 2018 Mar; 8(4):. PubMed ID: 29584710
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors.
    Lee J; Choi CH; Kim T; Hur J; Kim MJ; Kim EH; Lim JH; Kang Y; Jeong JK
    ACS Appl Mater Interfaces; 2022 Dec; 14(51):57016-57027. PubMed ID: 36511797
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Low-temperature fabrication of an HfO
    Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ
    Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.
    Ning H; Chen J; Fang Z; Tao R; Cai W; Yao R; Hu S; Zhu Z; Zhou Y; Yang C; Peng J
    Materials (Basel); 2017 Jan; 10(1):. PubMed ID: 28772410
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors.
    Wu G; Sahoo AK
    Nanomaterials (Basel); 2020 Nov; 10(12):. PubMed ID: 33260908
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
    Zhang Y; He G; Wang L; Wang W; Xu X; Liu W
    ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Amorphous IGZO TFT with High Mobility of ∼70 cm
    Sheng J; Hong T; Lee HM; Kim K; Sasase M; Kim J; Hosono H; Park JS
    ACS Appl Mater Interfaces; 2019 Oct; 11(43):40300-40309. PubMed ID: 31584254
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.
    Chung JM; Zhang X; Shang F; Kim JH; Wang XL; Liu S; Yang B; Xiang Y
    Nanoscale Res Lett; 2018 May; 13(1):164. PubMed ID: 29845334
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors.
    Oh C; Kim T; Ju MW; Kim MY; Park SH; Lee GH; Kim H; Kim S; Kim BS
    Materials (Basel); 2023 Sep; 16(18):. PubMed ID: 37763439
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.
    Park JH; Kim YG; Yoon S; Hong S; Kim HJ
    ACS Appl Mater Interfaces; 2014 Dec; 6(23):21363-8. PubMed ID: 25402628
    [TBL] [Abstract][Full Text] [Related]  

  • 56. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.
    Lee IK; Lee KH; Lee S; Cho WJ
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22680-6. PubMed ID: 25456792
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).
    Kim CK; Kim E; Lee MK; Park JY; Seol ML; Bae H; Bang T; Jeon SB; Jun S; Park SH; Choi KC; Choi YK
    ACS Appl Mater Interfaces; 2016 Sep; 8(36):23820-6. PubMed ID: 27552134
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility.
    Kim DG; Lee WB; Lee S; Koh J; Kuh B; Park JS
    ACS Appl Mater Interfaces; 2023 Aug; 15(30):36550-36563. PubMed ID: 37489641
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.
    Park JW; Tak YJ; Na JW; Lee H; Kim WG; Kim HJ
    ACS Appl Mater Interfaces; 2018 May; 10(19):16613-16622. PubMed ID: 29682960
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Present status of amorphous In-Ga-Zn-O thin-film transistors.
    Kamiya T; Nomura K; Hosono H
    Sci Technol Adv Mater; 2010 Aug; 11(4):044305. PubMed ID: 27877346
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 25.