These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

94 related articles for article (PubMed ID: 32126675)

  • 1. Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor.
    Jeong Y; Kang IM; Cho S; Park J; Shin H
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4920-4925. PubMed ID: 32126675
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography.
    Dehzangi A; Abdullah AM; Larki F; Hutagalung SD; Saion EB; Hamidon MN; Hassan J; Gharayebi Y
    Nanoscale Res Lett; 2012 Jul; 7(1):381. PubMed ID: 22781031
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Design of a Capacitorless Dynamic Random Access Memory Based on Ultra-Thin Polycrystalline Silicon Junctionless Field-Effect Transistor with Dual-Gate.
    Lee SH; Cho MS; Jung JH; Jang WD; Mun HJ; Jang J; Bae JH; Kang IM
    J Nanosci Nanotechnol; 2021 Aug; 21(8):4223-4229. PubMed ID: 33714307
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon Nanotube.
    Lee SH; Cho MS; Mun HJ; Park J; An HD; Jang J; Bae JH; Kang IM
    J Nanosci Nanotechnol; 2021 Aug; 21(8):4235-4242. PubMed ID: 33714309
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Circuit Simulation Considering Electrical Coupling in Monolithic 3D Logics with Junctionless FETs.
    Ahn TJ; Yu YS
    Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987731
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography.
    Larki F; Dehzangi A; Abedini A; Abdullah AM; Saion E; Hutagalung SD; Hamidon MN; Hassan J
    Beilstein J Nanotechnol; 2012; 3():817-23. PubMed ID: 23365794
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors.
    Seo JH; Yoon YJ; Cho S; Tae HS; Lee JH; Kang IM
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7615-9. PubMed ID: 26726384
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations.
    Fan L; Bi J; Xi K; Majumdar S; Li B
    Sensors (Basel); 2020 May; 20(10):. PubMed ID: 32408540
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter.
    Ahn TJ; Yu YS
    J Nanosci Nanotechnol; 2021 Aug; 21(8):4252-4257. PubMed ID: 33714311
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime.
    Omura Y
    Micromachines (Basel); 2018 Dec; 10(1):. PubMed ID: 30583561
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential.
    Choi S; Sun W; Lee I; Shin H
    J Nanosci Nanotechnol; 2016 May; 16(5):5150-4. PubMed ID: 27483890
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Current-voltage characteristics influenced by the nanochannel diameter and surface charge density in a fluidic field-effect-transistor.
    Singh KP; Guo C
    Phys Chem Chem Phys; 2017 Jun; 19(24):15701-15708. PubMed ID: 28585644
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.
    Wang J; Chen Z; You S; Bakeroot B; Liu J; Decoutere S
    Micromachines (Basel); 2021 Feb; 12(2):. PubMed ID: 33671856
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Si/Ge Hetero Tunnel Field-Effect Transistor with Junctionless Channel Based on Nanowire.
    Lee JC; Ahn TJ; Yu YS
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6750-6754. PubMed ID: 31027023
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Macro-Modeling for N-Type Feedback Field-Effect Transistor for Circuit Simulation.
    Oh JH; Yu YS
    Micromachines (Basel); 2021 Sep; 12(10):. PubMed ID: 34683223
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Static and dynamic compact analytical model for junctionless nanowire transistors.
    Pavanello MA; Trevisoli R; Doria RT; de Souza M
    J Phys Condens Matter; 2018 Aug; 30(33):334002. PubMed ID: 30004032
    [TBL] [Abstract][Full Text] [Related]  

  • 17. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.
    Du W; Inokawa H; Satoh H; Ono A
    Opt Lett; 2011 Aug; 36(15):2800-2. PubMed ID: 21808317
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electrical characteristics of nanoscale NAND silicon-oxide-nitride-oxide-silicon flash memory devices fabricated on SOI substrates.
    Ryu JT; You JH; Yoo KH; Kim TW
    J Nanosci Nanotechnol; 2011 Aug; 11(8):7512-5. PubMed ID: 22103232
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Gate-all-around junctionless FET based label-free dielectric/charge modulation detection of SARS-CoV-2 virus.
    Priyadarshani KN; Singh S; Mohammed MKA
    RSC Adv; 2022 Mar; 12(15):9202-9209. PubMed ID: 35424897
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations.
    Fan L; Bi J; Xi K; Yan G
    Sensors (Basel); 2020 Jul; 20(14):. PubMed ID: 32708539
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.