207 related articles for article (PubMed ID: 32155592)
1. Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy.
Lee D; Chun MC; Ko H; Kang BS; Kim J
Nanotechnology; 2020 Mar; 31(24):245202. PubMed ID: 32155592
[TBL] [Abstract][Full Text] [Related]
2. Stable and reliable IGZO resistive switching device with HfAlO
Peng H; Liu H; Ma X; Cheng X
Nanotechnology; 2023 Jun; 34(36):. PubMed ID: 37192603
[TBL] [Abstract][Full Text] [Related]
3. Composition-ratio influence on resistive switching behavior of solution-processed InGaZnO-based thin-film.
Hwang YH; Hwang I; Cho WJ
J Nanosci Nanotechnol; 2014 Nov; 14(11):8196-200. PubMed ID: 25958499
[TBL] [Abstract][Full Text] [Related]
4. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.
Hu W; Zou L; Chen X; Qin N; Li S; Bao D
ACS Appl Mater Interfaces; 2014 Apr; 6(7):5012-7. PubMed ID: 24635893
[TBL] [Abstract][Full Text] [Related]
5. Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn-Sn-O ReRAMs.
Kim TW; Cho WJ
J Nanosci Nanotechnol; 2019 Oct; 19(10):6099-6105. PubMed ID: 31026916
[TBL] [Abstract][Full Text] [Related]
6. Critical role of a double-layer configuration in solution-based unipolar resistive switching memories.
Carlos E; Kiazadeh A; Deuermeier J; Branquinho R; Martins R; Fortunato E
Nanotechnology; 2018 Aug; 29(34):345206. PubMed ID: 29863489
[TBL] [Abstract][Full Text] [Related]
7. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.
Han Y; Cho K; Park S; Kim S
J Nanosci Nanotechnol; 2014 Nov; 14(11):8191-5. PubMed ID: 25958498
[TBL] [Abstract][Full Text] [Related]
8. Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device.
Choi HS; Cho WJ
J Nanosci Nanotechnol; 2019 Oct; 19(10):6031-6035. PubMed ID: 31026903
[TBL] [Abstract][Full Text] [Related]
9. Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO
Heo KJ; Kim HS; Lee JY; Kim SJ
Sci Rep; 2020 Jun; 10(1):9276. PubMed ID: 32518357
[TBL] [Abstract][Full Text] [Related]
10. Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory.
Kim SM; Kim HJ; Jung HJ; Kim SH; Park JY; Seok TJ; Park TJ; Lee SW
ACS Appl Mater Interfaces; 2019 Aug; 11(33):30028-30036. PubMed ID: 31343152
[TBL] [Abstract][Full Text] [Related]
11. Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation.
Min SY; Cho WJ
J Nanosci Nanotechnol; 2020 Aug; 20(8):4740-4745. PubMed ID: 32126650
[TBL] [Abstract][Full Text] [Related]
12. Impact of oxygen exchange reaction at the ohmic interface in Ta
Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V
Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172
[TBL] [Abstract][Full Text] [Related]
13. High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure.
Kang K; Ahn H; Song Y; Lee W; Kim J; Kim Y; Yoo D; Lee T
Adv Mater; 2019 May; 31(21):e1804841. PubMed ID: 30932266
[TBL] [Abstract][Full Text] [Related]
14. Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM.
Zhang Z; Wang F; Hu K; She Y; Song S; Song Z; Zhang K
Materials (Basel); 2021 Jun; 14(12):. PubMed ID: 34208616
[TBL] [Abstract][Full Text] [Related]
15. Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe
Munjal S; Khare N
Sci Rep; 2017 Sep; 7(1):12427. PubMed ID: 28963521
[TBL] [Abstract][Full Text] [Related]
16. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB
J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090
[TBL] [Abstract][Full Text] [Related]
17. High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation.
Min SY; Cho WJ
Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33922130
[TBL] [Abstract][Full Text] [Related]
18. Bipolar resistive switching in HoCrO
Sahu DP; Jammalamadaka SN
Nanotechnology; 2020 Aug; 31(35):355202. PubMed ID: 32408284
[TBL] [Abstract][Full Text] [Related]
19. Roles of conducting filament and non-filament regions in the Ta
Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS
Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901
[TBL] [Abstract][Full Text] [Related]
20. Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-Compliance.
Kim MK; Lee JS
ACS Appl Mater Interfaces; 2016 Dec; 8(48):32918-32924. PubMed ID: 27934194
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
