207 related articles for article (PubMed ID: 32155592)
21. Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices.
Yao IC; Lee DY; Tseng TY; Lin P
Nanotechnology; 2012 Apr; 23(14):145201. PubMed ID: 22433578
[TBL] [Abstract][Full Text] [Related]
22. Influence of Incorporated Pt-Fe2O3 Core-Shell Nanoparticles on the Resistive Switching Characteristics of ZnO Thin Film.
Yoo EJ; Kang SY; Shim EL; Yoon TS; Kang CJ; Choi YJ
J Nanosci Nanotechnol; 2015 Nov; 15(11):8622-6. PubMed ID: 26726563
[TBL] [Abstract][Full Text] [Related]
23. In Situ Control of Oxygen Vacancies in TaO
Egorov KV; Kuzmichev DS; Chizhov PS; Lebedinskii YY; Hwang CS; Markeev AM
ACS Appl Mater Interfaces; 2017 Apr; 9(15):13286-13292. PubMed ID: 28350159
[TBL] [Abstract][Full Text] [Related]
24. Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer.
Jang SH; Ryu JT; Jung HS; Kim TW
J Nanosci Nanotechnol; 2016 Feb; 16(2):1587-91. PubMed ID: 27433626
[TBL] [Abstract][Full Text] [Related]
25. Air-Stable Lead-Free Perovskite Thin Film Based on CsBi
Xiong Z; Hu W; She Y; Lin Q; Hu L; Tang X; Sun K
ACS Appl Mater Interfaces; 2019 Aug; 11(33):30037-30044. PubMed ID: 31342747
[TBL] [Abstract][Full Text] [Related]
26. Memristors Using Solution-Based IGZO Nanoparticles.
Rosa J; Kiazadeh A; Santos L; Deuermeier J; Martins R; Gomes HL; Fortunato E
ACS Omega; 2017 Nov; 2(11):8366-8372. PubMed ID: 31457375
[TBL] [Abstract][Full Text] [Related]
27. A non-invasive approach to the resistive switching physical model of ultra-thin organic-inorganic dielectric-based ReRAMs.
Martinez A; Cho BJ; Kim MJ
Nanoscale; 2023 Nov; 15(46):18794-18805. PubMed ID: 37960930
[TBL] [Abstract][Full Text] [Related]
28. Resistive switching characteristics of the Cr/ZnO/Cr structure.
Yoo EJ; Kim JH; Song JH; Yoon TS; Choi YJ; Kang CJ
J Nanosci Nanotechnol; 2013 Sep; 13(9):6395-9. PubMed ID: 24205668
[TBL] [Abstract][Full Text] [Related]
29. Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory.
Jiang H; Stewart DA
ACS Appl Mater Interfaces; 2017 May; 9(19):16296-16304. PubMed ID: 28436217
[TBL] [Abstract][Full Text] [Related]
30. Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory.
Park TH; Kwon YJ; Kim HJ; Woo HC; Kim GS; An CH; Kim Y; Kwon DE; Hwang CS
ACS Appl Mater Interfaces; 2018 Jun; 10(25):21445-21450. PubMed ID: 29877075
[TBL] [Abstract][Full Text] [Related]
31. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films.
Lin KW; Wang TY; Chang YC
Polymers (Basel); 2021 Feb; 13(5):. PubMed ID: 33652819
[TBL] [Abstract][Full Text] [Related]
32. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.
Heo JS; Jo JW; Kang J; Jeong CY; Jeong HY; Kim SK; Kim K; Kwon HI; Kim J; Kim YH; Kim MG; Park SK
ACS Appl Mater Interfaces; 2016 Apr; 8(16):10403-12. PubMed ID: 27035796
[TBL] [Abstract][Full Text] [Related]
33. Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfO
Kim TW; Cho WJ
J Nanosci Nanotechnol; 2019 Mar; 19(3):1248-1253. PubMed ID: 30469171
[TBL] [Abstract][Full Text] [Related]
34. Programmable, electroforming-free TiO
Srivastava S; Thomas JP; Leung KT
Nanoscale; 2019 Oct; 11(39):18159-18168. PubMed ID: 31556429
[TBL] [Abstract][Full Text] [Related]
35. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.
Ambrosi E; Bricalli A; Laudato M; Ielmini D
Faraday Discuss; 2019 Feb; 213(0):87-98. PubMed ID: 30364922
[TBL] [Abstract][Full Text] [Related]
36. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.
Lee J; Yang K; Kwon JY; Kim JE; Han DI; Lee DH; Yoon JH; Park MH
Nano Converg; 2023 Dec; 10(1):55. PubMed ID: 38038784
[TBL] [Abstract][Full Text] [Related]
37. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.
Acharya SK; Nallagatla RV; Togibasa O; Lee BW; Liu C; Jung CU; Park BH; Park JY; Cho Y; Kim DW; Jo J; Kwon DH; Kim M; Hwang CS; Chae SC
ACS Appl Mater Interfaces; 2016 Mar; 8(12):7902-11. PubMed ID: 26955744
[TBL] [Abstract][Full Text] [Related]
38. Eradicating negative-Set behavior of TiO
Ismail M; Hashmi A; Rana AM; Kim S
Nanotechnology; 2020 Aug; 31(32):325201. PubMed ID: 32316002
[TBL] [Abstract][Full Text] [Related]
39. Performance enhancement of HfO
Byun JH; Ko WS; Kim KN; Lee DY; Kwon SY; Lee HD; Lee GW
Nanotechnology; 2023 Jul; 34(39):. PubMed ID: 37343526
[TBL] [Abstract][Full Text] [Related]
40. Effect of oxidizable electrode material on resistive switching characteristics of ZnO(x)S(1-x) films.
Cho K; Park S; Chung I; Kim S
J Nanosci Nanotechnol; 2014 Nov; 14(11):8187-90. PubMed ID: 25958497
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
