These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

132 related articles for article (PubMed ID: 32174805)

  • 1. On-Chip TaO
    Zhuk M; Zarubin S; Karateev I; Matveyev Y; Gornev E; Krasnikov G; Negrov D; Zenkevich A
    Front Neurosci; 2020; 14():94. PubMed ID: 32174805
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Forming-less and Non-Volatile Resistive Switching in WO
    Won S; Lee SY; Park J; Seo H
    Sci Rep; 2017 Aug; 7(1):10186. PubMed ID: 28860572
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate.
    Lee W; Jang J; Song Y; Cho K; Yoo D; Kim Y; Chung S; Lee T
    Nanotechnology; 2017 Mar; 28(13):135201. PubMed ID: 28170344
    [TBL] [Abstract][Full Text] [Related]  

  • 4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.
    Lee MJ; Lee CB; Lee D; Lee SR; Chang M; Hur JH; Kim YB; Kim CJ; Seo DH; Seo S; Chung UI; Yoo IK; Kim K
    Nat Mater; 2011 Jul; 10(8):625-30. PubMed ID: 21743450
    [TBL] [Abstract][Full Text] [Related]  

  • 5. pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories.
    Pei M; Qian J; Jiang S; Guo J; Yang C; Pan D; Wang Q; Wang X; Shi Y; Li Y
    J Phys Chem Lett; 2019 May; 10(10):2335-2340. PubMed ID: 31016982
    [TBL] [Abstract][Full Text] [Related]  

  • 6. High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays.
    Lee W; Park J; Kim S; Woo J; Shin J; Choi G; Park S; Lee D; Cha E; Lee BH; Hwang H
    ACS Nano; 2012 Sep; 6(9):8166-72. PubMed ID: 22928469
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays.
    Hirtzlin T; Bocquet M; Penkovsky B; Klein JO; Nowak E; Vianello E; Portal JM; Querlioz D
    Front Neurosci; 2019; 13():1383. PubMed ID: 31998059
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics.
    Xu J; Zhao X; Wang Z; Xu H; Hu J; Ma J; Liu Y
    Small; 2019 Jan; 15(4):e1803970. PubMed ID: 30500108
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics.
    Mikhaylov A; Pimashkin A; Pigareva Y; Gerasimova S; Gryaznov E; Shchanikov S; Zuev A; Talanov M; Lavrov I; Demin V; Erokhin V; Lobov S; Mukhina I; Kazantsev V; Wu H; Spagnolo B
    Front Neurosci; 2020; 14():358. PubMed ID: 32410943
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.
    Pradhan SK; Xiao B; Mishra S; Killam A; Pradhan AK
    Sci Rep; 2016 May; 6():26763. PubMed ID: 27240537
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.
    Chen B; Wang X; Gao B; Fang Z; Kang J; Liu L; Liu X; Lo GQ; Kwong DL
    Sci Rep; 2014 Oct; 4():6863. PubMed ID: 25359219
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
    Niu G; Kim HD; Roelofs R; Perez E; Schubert MA; Zaumseil P; Costina I; Wenger C
    Sci Rep; 2016 Jun; 6():28155. PubMed ID: 27312225
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices.
    Liu T; Wu W; Liao KN; Sun Q; Gong X; Roy VAL; Yu ZZ; Li RKY
    Carbohydr Polym; 2019 Jun; 214():213-220. PubMed ID: 30925991
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Conductive-bridging random access memory: challenges and opportunity for 3D architecture.
    Jana D; Roy S; Panja R; Dutta M; Rahaman SZ; Mahapatra R; Maikap S
    Nanoscale Res Lett; 2015; 10():188. PubMed ID: 25977660
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface.
    Prakash A; Maikap S; Chiu HC; Tien TC; Lai CS
    Nanoscale Res Lett; 2014; 9(1):152. PubMed ID: 24791160
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Ultralow Power Consumption Flexible Biomemristors.
    Kim MK; Lee JS
    ACS Appl Mater Interfaces; 2018 Mar; 10(12):10280-10286. PubMed ID: 29464944
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Controlling Resistive Switching by Using an Optimized MoS
    Qiu JT; Samanta S; Dutta M; Ginnaram S; Maikap S
    Langmuir; 2019 Mar; 35(11):3897-3906. PubMed ID: 30791683
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.
    Kim TW; Choi H; Oh SH; Jo M; Wang G; Cho B; Kim DY; Hwang H; Lee T
    Nanotechnology; 2009 Jan; 20(2):025201. PubMed ID: 19417263
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of Bilayer CeO
    Ismail M; Talib I; Rana AM; Akbar T; Jabeen S; Lee J; Kim S
    Nanoscale Res Lett; 2018 Oct; 13(1):318. PubMed ID: 30311009
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes.
    Hwang I; Wang W; Hwang SK; Cho SH; Kim KL; Jeong B; Huh J; Park C
    Nanoscale; 2016 May; 8(19):10273-81. PubMed ID: 27129104
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.