These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

132 related articles for article (PubMed ID: 32174805)

  • 21. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.
    Ji Y; Zeigler DF; Lee DS; Choi H; Jen AK; Ko HC; Kim TW
    Nat Commun; 2013; 4():2707. PubMed ID: 24176930
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights.
    Halter M; Bégon-Lours L; Bragaglia V; Sousa M; Offrein BJ; Abel S; Luisier M; Fompeyrine J
    ACS Appl Mater Interfaces; 2020 Apr; 12(15):17725-17732. PubMed ID: 32192333
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
    Zhao X; Li Y; Ai C; Wen D
    Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.
    Melo AH; Macêdo MA
    PLoS One; 2016; 11(12):e0168515. PubMed ID: 27992513
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering.
    Guerra LM; Dias C; Pereira J; Lv H; Cardoso S; Freitas PP; Ventura J
    J Nanosci Nanotechnol; 2017 Jan; 17(1):564-67. PubMed ID: 29630146
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
    Yi M; Cao Y; Ling H; Du Z; Wang L; Yang T; Fan Q; Xie L; Huang W
    Nanotechnology; 2014 May; 25(18):185202. PubMed ID: 24739543
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Reliable and Low-Power Multilevel Resistive Switching in TiO
    Xiao M; Musselman KP; Duley WW; Zhou YN
    ACS Appl Mater Interfaces; 2017 Feb; 9(5):4808-4817. PubMed ID: 28098978
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Conjugated fluorene based rod-coil block copolymers and their PCBM composites for resistive memory switching devices.
    Lian SL; Liu CL; Chen WC
    ACS Appl Mater Interfaces; 2011 Nov; 3(11):4504-11. PubMed ID: 21999193
    [TBL] [Abstract][Full Text] [Related]  

  • 29. SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices.
    Kingra SK; Parmar V; Chang CC; Hudec B; Hou TH; Suri M
    Sci Rep; 2020 Feb; 10(1):2567. PubMed ID: 32054872
    [TBL] [Abstract][Full Text] [Related]  

  • 30. All WSe
    Sivan M; Li Y; Veluri H; Zhao Y; Tang B; Wang X; Zamburg E; Leong JF; Niu JX; Chand U; Thean AV
    Nat Commun; 2019 Nov; 10(1):5201. PubMed ID: 31729375
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Ti-Doped GaO
    Park JH; Jeon DS; Kim TG
    ACS Appl Mater Interfaces; 2017 Dec; 9(49):43336-43342. PubMed ID: 29139293
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Oxygenated amorphous carbon for resistive memory applications.
    Santini CA; Sebastian A; Marchiori C; Jonnalagadda VP; Dellmann L; Koelmans WW; Rossell MD; Rossel CP; Eleftheriou E
    Nat Commun; 2015 Oct; 6():8600. PubMed ID: 26494026
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Improvement of SET variability in TaO
    Schönhals A; Waser R; Wouters DJ
    Nanotechnology; 2017 Nov; 28(46):465203. PubMed ID: 29059050
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits.
    Kubicek M; Schmitt R; Messerschmitt F; Rupp JL
    ACS Nano; 2015 Nov; 9(11):10737-48. PubMed ID: 26448096
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites.
    Shan Y; Lyu Z; Guan X; Younis A; Yuan G; Wang J; Li S; Wu T
    Phys Chem Chem Phys; 2018 Oct; 20(37):23837-23846. PubMed ID: 30204170
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO
    Vescio G; Martín G; Crespo-Yepes A; Claramunt S; Alonso D; López-Vidrier J; Estradé S; Porti M; Rodríguez R; Peiró F; Cornet A; Cirera A; Nafría M
    ACS Appl Mater Interfaces; 2019 Jul; 11(26):23659-23666. PubMed ID: 31180626
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Integrated photonics with programmable non-volatile memory.
    Song JF; Luo XS; Lim AE; Li C; Fang Q; Liow TY; Jia LX; Tu XG; Huang Y; Zhou HF; Lo GQ
    Sci Rep; 2016 Mar; 6():22616. PubMed ID: 26941113
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Highly-stable write-once-read-many-times switching behaviors of 1D-1R memristive devices based on graphene quantum dot nanocomposites.
    Sung S; Wu C; Jung HS; Kim TW
    Sci Rep; 2018 Aug; 8(1):12081. PubMed ID: 30104614
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Organic and hybrid resistive switching materials and devices.
    Gao S; Yi X; Shang J; Liu G; Li RW
    Chem Soc Rev; 2019 Mar; 48(6):1531-1565. PubMed ID: 30398508
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Resistive switching in sub-micrometric ZnO polycrystalline films.
    Conti D; Laurenti M; Porro S; Giovinazzo C; Bianco S; Fra V; Chiolerio A; Pirri CF; Milano G; Ricciardi C
    Nanotechnology; 2019 Feb; 30(6):065707. PubMed ID: 30523900
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 7.