These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
132 related articles for article (PubMed ID: 32174805)
21. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture. Ji Y; Zeigler DF; Lee DS; Choi H; Jen AK; Ko HC; Kim TW Nat Commun; 2013; 4():2707. PubMed ID: 24176930 [TBL] [Abstract][Full Text] [Related]
22. Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights. Halter M; Bégon-Lours L; Bragaglia V; Sousa M; Offrein BJ; Abel S; Luisier M; Fompeyrine J ACS Appl Mater Interfaces; 2020 Apr; 12(15):17725-17732. PubMed ID: 32192333 [TBL] [Abstract][Full Text] [Related]
23. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering. Zhao X; Li Y; Ai C; Wen D Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535 [TBL] [Abstract][Full Text] [Related]
24. Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. Melo AH; Macêdo MA PLoS One; 2016; 11(12):e0168515. PubMed ID: 27992513 [TBL] [Abstract][Full Text] [Related]
25. Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering. Guerra LM; Dias C; Pereira J; Lv H; Cardoso S; Freitas PP; Ventura J J Nanosci Nanotechnol; 2017 Jan; 17(1):564-67. PubMed ID: 29630146 [TBL] [Abstract][Full Text] [Related]
26. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film. Yi M; Cao Y; Ling H; Du Z; Wang L; Yang T; Fan Q; Xie L; Huang W Nanotechnology; 2014 May; 25(18):185202. PubMed ID: 24739543 [TBL] [Abstract][Full Text] [Related]
27. Reliable and Low-Power Multilevel Resistive Switching in TiO Xiao M; Musselman KP; Duley WW; Zhou YN ACS Appl Mater Interfaces; 2017 Feb; 9(5):4808-4817. PubMed ID: 28098978 [TBL] [Abstract][Full Text] [Related]
28. Conjugated fluorene based rod-coil block copolymers and their PCBM composites for resistive memory switching devices. Lian SL; Liu CL; Chen WC ACS Appl Mater Interfaces; 2011 Nov; 3(11):4504-11. PubMed ID: 21999193 [TBL] [Abstract][Full Text] [Related]
33. Improvement of SET variability in TaO Schönhals A; Waser R; Wouters DJ Nanotechnology; 2017 Nov; 28(46):465203. PubMed ID: 29059050 [TBL] [Abstract][Full Text] [Related]
34. Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits. Kubicek M; Schmitt R; Messerschmitt F; Rupp JL ACS Nano; 2015 Nov; 9(11):10737-48. PubMed ID: 26448096 [TBL] [Abstract][Full Text] [Related]
35. Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites. Shan Y; Lyu Z; Guan X; Younis A; Yuan G; Wang J; Li S; Wu T Phys Chem Chem Phys; 2018 Oct; 20(37):23837-23846. PubMed ID: 30204170 [TBL] [Abstract][Full Text] [Related]