172 related articles for article (PubMed ID: 32237720)
21. Doping-Mediated Lattice Engineering of Monolayer ReS
Ghimire G; Dhakal KP; Choi W; Esthete YA; Kim SJ; Tran TT; Lee H; Yang H; Duong DL; Kim YM; Kim J
ACS Nano; 2021 Aug; 15(8):13770-13780. PubMed ID: 34296605
[TBL] [Abstract][Full Text] [Related]
22. Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition.
Yang X; Zhu Z; Luo F; Wang G; Peng G; Zhu M; Qin S
ACS Appl Mater Interfaces; 2021 Sep; 13(38):46164-46170. PubMed ID: 34533939
[TBL] [Abstract][Full Text] [Related]
23. Two-Dimensional Mo
Bogaert K; Liu S; Liu T; Guo N; Zhang C; Gradečak S; Garaj S
Sci Rep; 2018 Aug; 8(1):12889. PubMed ID: 30150768
[TBL] [Abstract][Full Text] [Related]
24. Chemically driven tunable light emission of charged and neutral excitons in monolayer WS₂.
Peimyoo N; Yang W; Shang J; Shen X; Wang Y; Yu T
ACS Nano; 2014 Nov; 8(11):11320-9. PubMed ID: 25317839
[TBL] [Abstract][Full Text] [Related]
25. Performance of field-effect transistors based on Nb(x)W(1-x)S2 monolayers.
Feng LP; Jiang WZ; Su J; Zhou LQ; Liu ZT
Nanoscale; 2016 Mar; 8(12):6507-13. PubMed ID: 26935307
[TBL] [Abstract][Full Text] [Related]
26. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.
Chow PK; Jacobs-Gedrim RB; Gao J; Lu TM; Yu B; Terrones H; Koratkar N
ACS Nano; 2015 Feb; 9(2):1520-7. PubMed ID: 25603228
[TBL] [Abstract][Full Text] [Related]
27. Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides.
Zhang S; Hill HM; Moudgil K; Richter CA; Hight Walker AR; Barlow S; Marder SR; Hacker CA; Pookpanratana SJ
Adv Mater; 2018 Jul; ():e1802991. PubMed ID: 30059169
[TBL] [Abstract][Full Text] [Related]
28. Biaxial strain tuned upconversion photoluminescence of monolayer WS
Roy S; Yang X; Gao J
Sci Rep; 2024 Feb; 14(1):3860. PubMed ID: 38360891
[TBL] [Abstract][Full Text] [Related]
29. Simple Chemical Treatment to n-Dope Transition-Metal Dichalcogenides and Enhance the Optical and Electrical Characteristics.
Neupane GP; Tran MD; Yun SJ; Kim H; Seo C; Lee J; Han GH; Sood AK; Kim J
ACS Appl Mater Interfaces; 2017 Apr; 9(13):11950-11958. PubMed ID: 28303716
[TBL] [Abstract][Full Text] [Related]
30. Growth and Optical Properties of High-Quality Monolayer WS2 on Graphite.
Kobayashi Y; Sasaki S; Mori S; Hibino H; Liu Z; Watanabe K; Taniguchi T; Suenaga K; Maniwa Y; Miyata Y
ACS Nano; 2015 Apr; 9(4):4056-63. PubMed ID: 25809222
[TBL] [Abstract][Full Text] [Related]
31. Engineering Valley Polarization of Monolayer WS
Feng S; Cong C; Konabe S; Zhang J; Shang J; Chen Y; Zou C; Cao B; Wu L; Peimyoo N; Zhang B; Yu T
Small; 2019 Mar; 15(12):e1805503. PubMed ID: 30791201
[TBL] [Abstract][Full Text] [Related]
32. Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS
Qin JK; Shao WZ; Xu CY; Li Y; Ren DD; Song XG; Zhen L
ACS Appl Mater Interfaces; 2017 May; 9(18):15583-15591. PubMed ID: 28440614
[TBL] [Abstract][Full Text] [Related]
33. Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide.
Nayak AP; Yuan Z; Cao B; Liu J; Wu J; Moran ST; Li T; Akinwande D; Jin C; Lin JF
ACS Nano; 2015 Sep; 9(9):9117-23. PubMed ID: 26258661
[TBL] [Abstract][Full Text] [Related]
34. P-type Doping in Large-Area Monolayer MoS
Li M; Yao J; Wu X; Zhang S; Xing B; Niu X; Yan X; Yu Y; Liu Y; Wang Y
ACS Appl Mater Interfaces; 2020 Feb; 12(5):6276-6282. PubMed ID: 31937099
[TBL] [Abstract][Full Text] [Related]
35. Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS
Falin A; Holwill M; Lv H; Gan W; Cheng J; Zhang R; Qian D; Barnett MR; Santos EJG; Novoselov KS; Tao T; Wu X; Li LH
ACS Nano; 2021 Feb; 15(2):2600-2610. PubMed ID: 33503379
[TBL] [Abstract][Full Text] [Related]
36. Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment.
Chee SS; Oh C; Son M; Son GC; Jang H; Yoo TJ; Lee S; Lee W; Hwang JY; Choi H; Lee BH; Ham MH
Nanoscale; 2017 Jul; 9(27):9333-9339. PubMed ID: 28463375
[TBL] [Abstract][Full Text] [Related]
37. Synergistic vacancy defects and mechanical strain for the modulation of the mechanical, electronic and optical properties of monolayer tungsten disulfide.
Gao C; Yang X; Jiang M; Chen L; Chen Z; Singh CV
Phys Chem Chem Phys; 2021 Mar; 23(10):6298-6308. PubMed ID: 33688866
[TBL] [Abstract][Full Text] [Related]
38. Tunable Electronic Properties of Two-Dimensional Transition Metal Dichalcogenide Alloys: A First-Principles Prediction.
Xi J; Zhao T; Wang D; Shuai Z
J Phys Chem Lett; 2014 Jan; 5(2):285-91. PubMed ID: 26270701
[TBL] [Abstract][Full Text] [Related]
39. Self-Limiting Growth of Monolayer Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires.
Suzuki H; Kishibuchi M; Misawa M; Shimogami K; Ochiai S; Kokura T; Liu Y; Hashimoto R; Liu Z; Tsuruta K; Miyata Y; Hayashi Y
ACS Nano; 2023 May; 17(10):9455-9467. PubMed ID: 37127554
[TBL] [Abstract][Full Text] [Related]
40. Phase Transition across Anisotropic NbS
Wu K; Blei M; Chen B; Liu L; Cai H; Brayfield C; Wright D; Zhuang H; Tongay S
Adv Mater; 2020 Apr; 32(17):e2000018. PubMed ID: 32167204
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
