These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

246 related articles for article (PubMed ID: 32284767)

  • 1. Decade of 2D-materials-based RRAM devices: a review.
    Rehman MM; Rehman HMMU; Gul JZ; Kim WY; Karimov KS; Ahmed N
    Sci Technol Adv Mater; 2020; 21(1):147-186. PubMed ID: 32284767
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
    Zahoor F; Hussin FA; Isyaku UB; Gupta S; Khanday FA; Chattopadhyay A; Abbas H
    Discov Nano; 2023 Mar; 18(1):36. PubMed ID: 37382679
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Compositional effects of hybrid MoS
    R M; Raina G
    Nanotechnology; 2024 Jul; 35(40):. PubMed ID: 38955133
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Graphene-based RRAM devices for neural computing.
    R RT; Das RR; Reghuvaran C; James A
    Front Neurosci; 2023; 17():1253075. PubMed ID: 37886675
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.
    Shen Z; Zhao C; Qi Y; Xu W; Liu Y; Mitrovic IZ; Yang L; Zhao C
    Nanomaterials (Basel); 2020 Jul; 10(8):. PubMed ID: 32717952
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices.
    Carlos E; Branquinho R; Martins R; Kiazadeh A; Fortunato E
    Adv Mater; 2021 Feb; 33(7):e2004328. PubMed ID: 33314334
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Emerging memories: resistive switching mechanisms and current status.
    Jeong DS; Thomas R; Katiyar RS; Scott JF; Kohlstedt H; Petraru A; Hwang CS
    Rep Prog Phys; 2012 Jul; 75(7):076502. PubMed ID: 22790779
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition.
    Jang BC; Seong H; Kim SK; Kim JY; Koo BJ; Choi J; Yang SY; Im SG; Choi SY
    ACS Appl Mater Interfaces; 2016 May; 8(20):12951-8. PubMed ID: 27142537
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.
    Simanjuntak FM; Panda D; Wei KH; Tseng TY
    Nanoscale Res Lett; 2016 Dec; 11(1):368. PubMed ID: 27541816
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Flexible Molybdenum Disulfide (MoS
    Singh E; Singh P; Kim KS; Yeom GY; Nalwa HS
    ACS Appl Mater Interfaces; 2019 Mar; 11(12):11061-11105. PubMed ID: 30830744
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Resistance-switchable conjugated polyrotaxane for flexible high-performance RRAMs.
    Zhou J; Feng H; Sun Q; Xie Z; Pang X; Minari T; Liu X; Zhang L
    Mater Horiz; 2022 May; 9(5):1526-1535. PubMed ID: 35343990
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhancing simulation feasibility for multi-layer 2D MoS
    Lee S; Huang Y; Chang YF; Baik S; Lee JC; Koo M
    Phys Chem Chem Phys; 2024 Aug; 26(31):20962-20970. PubMed ID: 39046422
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO
    Chen KH; Cheng CM; Wang NF; Kao MC
    Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570498
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Statistical Analysis of Uniform Switching Characteristics of Ta
    Jin S; Kwon JD; Kim Y
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771802
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
    Park SP; Tak YJ; Kim HJ; Lee JH; Yoo H; Kim HJ
    Adv Mater; 2018 Jun; 30(26):e1800722. PubMed ID: 29761552
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process.
    Yang S; Park J; Cho Y; Lee Y; Kim S
    Int J Mol Sci; 2022 Oct; 23(21):. PubMed ID: 36362036
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Multi-Level Resistive Al/Ga
    Wang LW; Huang CW; Lee KJ; Chu SY; Wang YH
    Nanomaterials (Basel); 2023 Jun; 13(12):. PubMed ID: 37368281
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
    Chen KH; Kao MC; Huang SJ; Li JZ
    Materials (Basel); 2017 Dec; 10(12):. PubMed ID: 29231867
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Pseudohalide-Induced 2D (CH
    Cheng XF; Hou X; Zhou J; Gao BJ; He JH; Li H; Xu QF; Li NJ; Chen DY; Lu JM
    Small; 2018 Mar; 14(12):e1703667. PubMed ID: 29457377
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Room-Temperature, Solution-Processed SiO
    Li P; Wang D; Zhang Z; Guo Y; Jiang L; Xu C
    ACS Appl Mater Interfaces; 2020 Dec; 12(50):56186-56194. PubMed ID: 33231429
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 13.