These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

99 related articles for article (PubMed ID: 32288246)

  • 21. High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage.
    Zhang Y; Li Y; Wang J; Shen Y; Du L; Li Y; Wang Z; Xu S; Zhang J; Hao Y
    Nanoscale Res Lett; 2020 May; 15(1):114. PubMed ID: 32436019
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN/GaN HEMTs.
    Yu CH; Luo QZ; Luo XD; Liu PS
    ScientificWorldJournal; 2013; 2013():931980. PubMed ID: 24348195
    [TBL] [Abstract][Full Text] [Related]  

  • 23. GaN Heterostructures as Innovative X-ray Imaging Sensors-Change of Paradigm.
    Thalhammer S; Hörner A; Küß M; Eberle S; Pantle F; Wixforth A; Nagel W
    Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208272
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.
    Makowski MS; Kim S; Gaillard M; Janes D; Manfra MJ; Bryan I; Sitar Z; Arellano C; Xie J; Collazo R; Ivanisevic A
    Appl Phys Lett; 2013 Feb; 102(7):74102. PubMed ID: 23509411
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.
    Oh SK; Song CG; Jang T; Kim KC; Jo YJ; Kwak JS
    J Nanosci Nanotechnol; 2013 Mar; 13(3):1738-40. PubMed ID: 23755582
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.
    Chien CY; Wu WH; You YH; Lin JH; Lee CY; Hsu WC; Kuan CH; Lin RM
    Nanoscale Res Lett; 2017 Dec; 12(1):420. PubMed ID: 28629208
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Comparative analysis of nano-scale structural and electrical properties in AlGaN/GaN high electron mobility transistors on SiC and sapphire substrates.
    Wang C; Cho SJ; Kim NY
    J Nanosci Nanotechnol; 2013 Oct; 13(10):7083-8. PubMed ID: 24245197
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation.
    Nguyen VC; Kim K; Kim H
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33916387
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs.
    Guo H; Chen T; Shi S
    Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936651
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors.
    Lee GH; Park AH; Lim JH; Lee CH; Jeon DW; Kim YB; Lee J; Yang JW; Suh EK; Seo TH
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4450-4453. PubMed ID: 31968494
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.
    Heo JW; Kim YJ; Kim HS
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9436-42. PubMed ID: 25971079
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs.
    Paz-Martínez G; Íñiguez-de-la-Torre I; Sánchez-Martín H; Novoa-López JA; Hoel V; Cordier Y; Mateos J; González T
    Sensors (Basel); 2022 Feb; 22(4):. PubMed ID: 35214416
    [TBL] [Abstract][Full Text] [Related]  

  • 33. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
    Dong Y; Son DH; Dai Q; Lee JH; Won CH; Kim JG; Chen D; Lee JH; Lu H; Zhang R; Zheng Y
    Sensors (Basel); 2018 Apr; 18(5):. PubMed ID: 29695112
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Impact of Gamma Radiation on Dynamic R
    Martínez PJ; Maset E; Martín-Holgado P; Morilla Y; Gilabert D; Sanchis-Kilders E
    Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31466249
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.
    Sharma N; Periasamy C; Chaturvedi N
    J Nanosci Nanotechnol; 2018 Jul; 18(7):4580-4587. PubMed ID: 29442634
    [TBL] [Abstract][Full Text] [Related]  

  • 36. High sensitivity label-free detection of HER2 using an Al-GaN/GaN high electron mobility transistor-based biosensor.
    Mishra S; Kachhawa P; Jain AK; Thakur RR; Chaturvedi N
    Lab Chip; 2022 Oct; 22(21):4129-4140. PubMed ID: 36129428
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Steep Switching of In
    Chen PG; Chen KT; Tang M; Wang ZY; Chou YC; Lee MH
    Sensors (Basel); 2018 Aug; 18(9):. PubMed ID: 30149580
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond.
    Kim ZS; Lee HS; Bae SB; Nam E; Lim JW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6119-6122. PubMed ID: 31026919
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment.
    Yoon YJ; Lee JS; Suk JK; Kang IM; Lee JH; Lee EJ; Kim DS
    Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442485
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect.
    Kim HJ; Jang KW; Kim HS
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6016-6022. PubMed ID: 31026901
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 5.