196 related articles for article (PubMed ID: 32316694)
1. The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor.
Zhang H; Yang S; Sheng K
Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32316694
[TBL] [Abstract][Full Text] [Related]
2. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.
Abidin MS; Hashim AM; Sharifabad ME; Rahman SF; Sadoh T
Sensors (Basel); 2011; 11(3):3067-77. PubMed ID: 22163786
[TBL] [Abstract][Full Text] [Related]
3. Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications.
Li C; Chen X; Wang Z
Micromachines (Basel); 2024 Feb; 15(3):. PubMed ID: 38542577
[TBL] [Abstract][Full Text] [Related]
4. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
[TBL] [Abstract][Full Text] [Related]
5. Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique.
Zhang H; Gan Y; Yang S; Sheng K; Wang P
Microsyst Nanoeng; 2021; 7():51. PubMed ID: 34567764
[TBL] [Abstract][Full Text] [Related]
6. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
Vuong TA; Cha HY; Kim H
Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
[TBL] [Abstract][Full Text] [Related]
7. Optimization of gate geometry towards high-sensitivity AlGaN/GaN pH sensor.
Zhang H; Tu J; Yang S; Sheng K; Wang P
Talanta; 2019 Dec; 205():120134. PubMed ID: 31450402
[TBL] [Abstract][Full Text] [Related]
8. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
[TBL] [Abstract][Full Text] [Related]
9. High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy.
Zhang YY; Zheng YX; Lai JY; Seo JH; Lee KH; Tan CS; An S; Shin SH; Son B; Kim M
ACS Nano; 2021 May; 15(5):8386-8396. PubMed ID: 33908251
[TBL] [Abstract][Full Text] [Related]
10. Enhanced Operational Characteristics Attained by Applying HfO
Choi JH; Kang WS; Kim D; Kim JH; Lee JH; Kim KY; Min BG; Kang DM; Kim HS
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374686
[TBL] [Abstract][Full Text] [Related]
11. Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.
Alpert HS; Chapin CA; Dowling KM; Benbrook SR; Köck H; Ausserlechner U; Senesky DG
Rev Sci Instrum; 2020 Feb; 91(2):025003. PubMed ID: 32113418
[TBL] [Abstract][Full Text] [Related]
12. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
[TBL] [Abstract][Full Text] [Related]
13. Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT.
Jiang J; Chen Q; Hu S; Shi Y; He Z; Huang Y; Hui C; Chen Y; Wu H; Lu G
Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837114
[TBL] [Abstract][Full Text] [Related]
14. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
[TBL] [Abstract][Full Text] [Related]
15. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
Fisichella G; Greco G; Roccaforte F; Giannazzo F
Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
[TBL] [Abstract][Full Text] [Related]
16. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
Lee HP; Perozek J; Rosario LD; Bayram C
Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
[TBL] [Abstract][Full Text] [Related]
17. Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation.
Nguyen VC; Kim K; Kim H
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33916387
[TBL] [Abstract][Full Text] [Related]
18. Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.
Jia X; Chen D; Bin L; Lu H; Zhang R; Zheng Y
Sci Rep; 2016 Jun; 6():27728. PubMed ID: 27278795
[TBL] [Abstract][Full Text] [Related]
19. Nanoporous GaN on
Lee KJ; Nakazato Y; Chun J; Wen X; Meng C; Soman R; Noshin M; Chowdhury S
Nanotechnology; 2022 Oct; 33(50):. PubMed ID: 36103775
[TBL] [Abstract][Full Text] [Related]
20. Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride.
Wang J; Li H; Li H; Keller S; Mishra UK; Nener BD; Parish G; Atkin R
J Colloid Interface Sci; 2021 Dec; 603():604-614. PubMed ID: 34217948
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]