189 related articles for article (PubMed ID: 32329484)
1. Enhanced carrier transport by transition metal doping in WS
Liu M; Wei S; Shahi S; Jaiswal HN; Paletti P; Fathipour S; Remškar M; Jiao J; Hwang W; Yao F; Li H
Nanoscale; 2020 Sep; 12(33):17253-17264. PubMed ID: 32329484
[TBL] [Abstract][Full Text] [Related]
2. Improvement of the Bias Stress Stability in 2D MoS
Park W; Pak Y; Jang HY; Nam JH; Kim TH; Oh S; Choi SM; Kim Y; Cho B
Nanomaterials (Basel); 2019 Aug; 9(8):. PubMed ID: 31409001
[TBL] [Abstract][Full Text] [Related]
3. Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming.
Wu Z; Zhu Y; Wang F; Ding C; Wang Y; Zhan X; He J; Wang Z
Nano Lett; 2022 Sep; 22(17):7094-7103. PubMed ID: 36053055
[TBL] [Abstract][Full Text] [Related]
4. Insertion of an ultrathin Al
Zheng S; Lu H; Liu H; Liu D; Robertson J
Nanoscale; 2019 Mar; 11(11):4811-4821. PubMed ID: 30816375
[TBL] [Abstract][Full Text] [Related]
5. Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Yang L; Majumdar K; Liu H; Du Y; Wu H; Hatzistergos M; Hung PY; Tieckelmann R; Tsai W; Hobbs C; Ye PD
Nano Lett; 2014 Nov; 14(11):6275-80. PubMed ID: 25310177
[TBL] [Abstract][Full Text] [Related]
6. A "Click" Reaction to Engineer MoS
Miao J; Wu L; Bian Z; Zhu Q; Zhang T; Pan X; Hu J; Xu W; Wang Y; Xu Y; Yu B; Ji W; Zhang X; Qiao J; Samorì P; Zhao Y
ACS Nano; 2022 Dec; 16(12):20647-20655. PubMed ID: 36455073
[TBL] [Abstract][Full Text] [Related]
7. Performance of field-effect transistors based on Nb(x)W(1-x)S2 monolayers.
Feng LP; Jiang WZ; Su J; Zhou LQ; Liu ZT
Nanoscale; 2016 Mar; 8(12):6507-13. PubMed ID: 26935307
[TBL] [Abstract][Full Text] [Related]
8. Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.
Khalil HM; Khan MF; Eom J; Noh H
ACS Appl Mater Interfaces; 2015 Oct; 7(42):23589-96. PubMed ID: 26434774
[TBL] [Abstract][Full Text] [Related]
9. Selective p-Doping of 2D WSe
Yang S; Lee G; Kim J
ACS Appl Mater Interfaces; 2021 Jan; 13(1):955-961. PubMed ID: 33379863
[TBL] [Abstract][Full Text] [Related]
10. Approaching Ohmic Contacts for Ideal Monolayer MoS
Xiao J; Chen K; Zhang X; Liu X; Yu H; Gao L; Hong M; Gu L; Zhang Z; Zhang Y
Small Methods; 2023 Nov; 7(11):e2300611. PubMed ID: 37551044
[TBL] [Abstract][Full Text] [Related]
11. Doping-Free All PtSe
Das T; Yang E; Seo JE; Kim JH; Park E; Kim M; Seo D; Kwak JY; Chang J
ACS Appl Mater Interfaces; 2021 Jan; 13(1):1861-1871. PubMed ID: 33393295
[TBL] [Abstract][Full Text] [Related]
12. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.
Barreda JL; Keiper TD; Zhang M; Xiong P
ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114
[TBL] [Abstract][Full Text] [Related]
13. Ambipolar Charge Transport in Two-Dimensional WS
Lee G; Oh S; Kim J; Kim J
ACS Appl Mater Interfaces; 2020 May; 12(20):23127-23133. PubMed ID: 32337986
[TBL] [Abstract][Full Text] [Related]
14. Benchmarking monolayer MoS
Sebastian A; Pendurthi R; Choudhury TH; Redwing JM; Das S
Nat Commun; 2021 Jan; 12(1):693. PubMed ID: 33514710
[TBL] [Abstract][Full Text] [Related]
15. Modulation Doping of Single-Layer Semiconductors for Improved Contact at Metal Interfaces.
Cho Y; Schleder GR; Larson DT; Brutschea E; Byun KE; Park H; Kim P; Kaxiras E
Nano Lett; 2022 Dec; 22(23):9700-9706. PubMed ID: 36441915
[TBL] [Abstract][Full Text] [Related]
16. Epitaxy of NiTe
Qi Z; Zhai X; Jiang X; Xu X; Fan C; Shen L; Xiao Q; Jiang S; Deng Q; Liu H; Jing F; Zhang Q
ACS Appl Mater Interfaces; 2022 Jul; 14(27):31121-31130. PubMed ID: 35767657
[TBL] [Abstract][Full Text] [Related]
17. Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping.
Oberoi A; Han Y; Stepanoff SP; Pannone A; Sun Y; Lin YC; Chen C; Shallenberger JR; Zhou D; Terrones M; Redwing JM; Robinson JA; Wolfe DE; Yang Y; Das S
ACS Nano; 2023 Oct; 17(20):19709-19723. PubMed ID: 37812500
[TBL] [Abstract][Full Text] [Related]
18. A Facile and Effective Method for Patching Sulfur Vacancies of WS
Jiang J; Zhang Q; Wang A; Zhang Y; Meng F; Zhang C; Feng X; Feng Y; Gu L; Liu H; Han L
Small; 2019 Sep; 15(36):e1901791. PubMed ID: 31211505
[TBL] [Abstract][Full Text] [Related]
19. Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors.
Li HM; Lee DY; Choi MS; Qu D; Liu X; Ra CH; Yoo WJ
Sci Rep; 2014 Feb; 4():4041. PubMed ID: 24509565
[TBL] [Abstract][Full Text] [Related]
20. Nb Doping and Alloying of 2D WS
Schulpen JJPM; Lam CHX; Dawley RA; Li R; Jin L; Ma T; Kessels WMM; Koester SJ; Bol AA
ACS Appl Nano Mater; 2024 Apr; 7(7):7395-7407. PubMed ID: 38633297
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
