These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

79 related articles for article (PubMed ID: 32370003)

  • 1. Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits.
    Sarker MAR; Jung S; Ildefonso A; Khachatrian A; Buchner SP; McMorrow D; Paki P; Cressler JD; Song I
    Sensors (Basel); 2020 May; 20(9):. PubMed ID: 32370003
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures.
    Curry MJ; Rudolph M; England TD; Mounce AM; Jock RM; Bureau-Oxton C; Harvey-Collard P; Sharma PA; Anderson JM; Campbell DM; Wendt JR; Ward DR; Carr SM; Lilly MP; Carroll MS
    Sci Rep; 2019 Nov; 9(1):16976. PubMed ID: 31740683
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Design of high efficiency multi-GHz SiGe HBT electro-optic modulator.
    Deng S; Huang ZR; McDonald JF
    Opt Express; 2009 Aug; 17(16):13425-8. PubMed ID: 19654748
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors.
    Božanić M; Sinha S
    Sensors (Basel); 2019 May; 19(11):. PubMed ID: 31146364
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD.
    Cibiel G; Régis M; Llopis O; Rennane A; Bary L; Plana R; Kersalé Y; Giordano V
    IEEE Trans Ultrason Ferroelectr Freq Control; 2004 Jan; 51(1):33-41. PubMed ID: 14995014
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature.
    Yu G; Liang R; Wang X; Xu J; Ren TL
    Sci Bull (Beijing); 2019 Apr; 64(7):469-477. PubMed ID: 36659798
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.
    McMorrow JJ; Cress CD; Gaviria Rojas WA; Geier ML; Marks TJ; Hersam MC
    ACS Nano; 2017 Mar; 11(3):2992-3000. PubMed ID: 28212000
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Note: cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors.
    Beev N; Kiviranta M
    Rev Sci Instrum; 2012 Jun; 83(6):066107. PubMed ID: 22755673
    [TBL] [Abstract][Full Text] [Related]  

  • 9. AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers.
    Xiang Y; Reuterskiöld-Hedlund C; Yu X; Yang C; Zabel T; Hammar M; Akram MN
    Opt Express; 2015 Jun; 23(12):15680-99. PubMed ID: 26193547
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications.
    Xiang Q; Liu H; Zhou Y
    Micromachines (Basel); 2022 Nov; 13(12):. PubMed ID: 36557401
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Up-converted 1/f PM and AM noise in linear HBT amplifiers.
    Ferre-Pikal ES; Savage FH
    IEEE Trans Ultrason Ferroelectr Freq Control; 2008 Aug; 55(8):1698-704. PubMed ID: 18986914
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Theoretical investigation of the count rate capabilities of in-pixel amplifiers for photon counting arrays based on polycrystalline silicon TFTs.
    Liang AK; Koniczek M; Antonuk LE; El-Mohri Y; Zhao Q
    Med Phys; 2018 Oct; 45(10):4418-4429. PubMed ID: 30106180
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.
    Sheriff BA; Wang D; Heath JR; Kurtin JN
    ACS Nano; 2008 Sep; 2(9):1789-98. PubMed ID: 19206417
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Strain engineering of nanoscale Si P-type metal-oxide-semiconductor field-effect transistor devices with SiGe alloy integrated with contact-etch-stop layer stressors.
    Lee CC
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5402-6. PubMed ID: 22966579
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits.
    Shim J; Jang SW; Lim JH; Kim H; Kang DH; Kim KH; Seo S; Heo K; Shin C; Yu HY; Lee S; Ko DH; Park JH
    Nanoscale; 2019 Jul; 11(27):12871-12877. PubMed ID: 31243409
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A 0.35 μm sub-ns wake-up time ON-OFF switchable LVDS driver-receiver chip I/O pad pair for rate-dependent power saving in AER bit-serial links.
    Zamarreño-Ramos C; Serrano-Gotarredona T; Linares-Barranco B
    IEEE Trans Biomed Circuits Syst; 2012 Oct; 6(5):486-97. PubMed ID: 23853235
    [TBL] [Abstract][Full Text] [Related]  

  • 17. SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector.
    Youn JS; Lee MJ; Park KY; Rücker H; Choi WY
    Opt Express; 2014 Jan; 22(1):900-7. PubMed ID: 24515049
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Sharp bends and Mach-Zehnder interferometer based on Ge-rich-SiGe waveguides on SiGe graded buffer.
    Vakarin V; Chaisakul P; Frigerio J; Ballabio A; Le Roux X; Coudevylle JR; Bouville D; Perez-Galacho D; Vivien L; Isella G; Marris-Morini D
    Opt Express; 2015 Nov; 23(24):30821-6. PubMed ID: 26698715
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time.
    Yoon YJ; Cho MS; Kim BG; Seo JH; Kang IM
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6023-6030. PubMed ID: 31026902
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Logic circuits with carbon nanotube transistors.
    Bachtold A; Hadley P; Nakanishi T; Dekker C
    Science; 2001 Nov; 294(5545):1317-20. PubMed ID: 11588220
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 4.