167 related articles for article (PubMed ID: 32403832)
1. Upside-down InAs/InAs
Deng G; Song X; Fan M; Xiao T; Luo Z; Chen N; Yang W; Zhang Y
Opt Express; 2020 Apr; 28(9):13616-13624. PubMed ID: 32403832
[TBL] [Abstract][Full Text] [Related]
2. Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs
Haddadi A; Dehzangi A; Chevallier R; Adhikary S; Razeghi M
Sci Rep; 2017 Jun; 7(1):3379. PubMed ID: 28611381
[TBL] [Abstract][Full Text] [Related]
3. Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors.
Chevallier R; Haddadi A; Razeghi M
Sci Rep; 2017 Oct; 7(1):12617. PubMed ID: 28974769
[TBL] [Abstract][Full Text] [Related]
4. High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra.
Jiang J; Wang G; Wu D; Xu Y; Chang F; Zhou W; Li N; Jiang D; Hao H; Cui S; Chen W; Xu X; Ni H; Ding Y; Niu ZC
Opt Express; 2022 Oct; 30(21):38208-38215. PubMed ID: 36258387
[TBL] [Abstract][Full Text] [Related]
5. InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors.
Ting DZ; Rafol SB; Khoshakhlagh A; Soibel A; Keo SA; Fisher AM; Pepper BJ; Hill CJ; Gunapala SD
Micromachines (Basel); 2020 Oct; 11(11):. PubMed ID: 33114617
[TBL] [Abstract][Full Text] [Related]
6. Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity.
Letka V; Bainbridge A; Craig AP; Al-Saymari F; Marshall ARJ
Opt Express; 2019 Aug; 27(17):23970-23980. PubMed ID: 31510293
[TBL] [Abstract][Full Text] [Related]
7. Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches.
Shaveisi M; Aliparast P
Front Optoelectron; 2023 Apr; 16(1):5. PubMed ID: 37022594
[TBL] [Abstract][Full Text] [Related]
8. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation.
Ariyawansa G; Duran J; Reyner C; Scheihing J
Micromachines (Basel); 2019 Nov; 10(12):. PubMed ID: 31766748
[TBL] [Abstract][Full Text] [Related]
9. High operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices.
Deng G; Chen D; Yang S; Yang C; Yuan J; Yang W; Zhang Y
Opt Express; 2020 Jun; 28(12):17611-17619. PubMed ID: 32679966
[TBL] [Abstract][Full Text] [Related]
10. Type-II superlattices base visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor.
Dehzangi A; McClintock R; Haddadi A; Wu D; Chevallier R; Razeghi M
Sci Rep; 2019 Mar; 9(1):5003. PubMed ID: 30899055
[TBL] [Abstract][Full Text] [Related]
11. nBn extended short-wavelength infrared focal plane array.
Dehzangi A; Haddadi A; Chevallier R; Zhang Y; Razeghi M
Opt Lett; 2018 Feb; 43(3):591-594. PubMed ID: 29400848
[TBL] [Abstract][Full Text] [Related]
12. Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices.
Haddadi A; Razeghi M
Opt Lett; 2017 Nov; 42(21):4275-4278. PubMed ID: 29088141
[TBL] [Abstract][Full Text] [Related]
13. Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire.
Zhang X; Huang H; Yao X; Li Z; Zhou C; Zhang X; Chen P; Fu L; Zhou X; Wang J; Hu W; Lu W; Zou J; Tan HH; Jagadish C
ACS Nano; 2019 Mar; 13(3):3492-3499. PubMed ID: 30817125
[TBL] [Abstract][Full Text] [Related]
14. InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.
Li Z; Azimi Z; Li Z; Yu Y; Huang L; Jin W; Tan HH; Jagadish C; Wong-Leung J; Fu L
Nanoscale; 2023 Jun; 15(23):10033-10041. PubMed ID: 37248736
[TBL] [Abstract][Full Text] [Related]
15. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires.
Xu T; Wang H; Chen X; Luo M; Zhang L; Wang Y; Chen F; Shan C; Yu C
Nanotechnology; 2020 May; 31(29):294004. PubMed ID: 32235081
[TBL] [Abstract][Full Text] [Related]
16. Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors.
Chen J; Xu Q; Zhou Y; Jin J; Lin C; He L
Nanoscale Res Lett; 2011 Dec; 6(1):635. PubMed ID: 22192726
[TBL] [Abstract][Full Text] [Related]
17. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire.
Fang H; Hu W; Wang P; Guo N; Luo W; Zheng D; Gong F; Luo M; Tian H; Zhang X; Luo C; Wu X; Chen P; Liao L; Pan A; Chen X; Lu W
Nano Lett; 2016 Oct; 16(10):6416-6424. PubMed ID: 27598791
[TBL] [Abstract][Full Text] [Related]
18. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice.
Dehzangi A; Li J; Razeghi M
Light Sci Appl; 2021 Jan; 10(1):17. PubMed ID: 33446630
[TBL] [Abstract][Full Text] [Related]
19. Comparative advantages of a type-II superlattice barrier over an AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors.
Lee HJ; Jang A; Kim YH; Jung H; Bidenko P; Kim S; Kim M; Nah J
Opt Lett; 2021 Aug; 46(16):3877-3880. PubMed ID: 34388764
[TBL] [Abstract][Full Text] [Related]
20. InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors.
Manyk T; Michalczewski K; Murawski K; Martyniuk P; Rutkowski J
Sensors (Basel); 2019 Apr; 19(8):. PubMed ID: 31013651
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
