These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
122 related articles for article (PubMed ID: 32478740)
1. In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VO x. Nirantar S; Mayes E; Sriram S J Vis Exp; 2020 May; (159):. PubMed ID: 32478740 [TBL] [Abstract][Full Text] [Related]
2. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Kwon DH; Kim KM; Jang JH; Jeon JM; Lee MH; Kim GH; Li XS; Park GS; Lee B; Han S; Kim M; Hwang CS Nat Nanotechnol; 2010 Feb; 5(2):148-53. PubMed ID: 20081847 [TBL] [Abstract][Full Text] [Related]
3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Prezioso M; Merrikh-Bayat F; Hoskins BD; Adam GC; Likharev KK; Strukov DB Nature; 2015 May; 521(7550):61-4. PubMed ID: 25951284 [TBL] [Abstract][Full Text] [Related]
4. Graphene oxide thin films for flexible nonvolatile memory applications. Jeong HY; Kim JY; Kim JW; Hwang JO; Kim JE; Lee JY; Yoon TH; Cho BJ; Kim SO; Ruoff RS; Choi SY Nano Lett; 2010 Nov; 10(11):4381-6. PubMed ID: 20919689 [TBL] [Abstract][Full Text] [Related]
5. Scaling effect on unipolar and bipolar resistive switching of metal oxides. Yanagida T; Nagashima K; Oka K; Kanai M; Klamchuen A; Park BH; Kawai T Sci Rep; 2013; 3():1657. PubMed ID: 23584551 [TBL] [Abstract][Full Text] [Related]
6. Electroforming in Metal-Oxide Memristive Synapses. Wang T; Shi Y; Puglisi FM; Chen S; Zhu K; Zuo Y; Li X; Jing X; Han T; Guo B; Bukvišová K; Kachtík L; Kolíbal M; Wen C; Lanza M ACS Appl Mater Interfaces; 2020 Mar; 12(10):11806-11814. PubMed ID: 32036650 [TBL] [Abstract][Full Text] [Related]
7. The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films. Tominov RV; Vakulov ZE; Avilov VI; Khakhulin DA; Polupanov NV; Smirnov VA; Ageev OA Molecules; 2020 Dec; 26(1):. PubMed ID: 33383898 [TBL] [Abstract][Full Text] [Related]
8. Electrochemical Tantalum Oxide for Resistive Switching Memories. Zaffora A; Cho DY; Lee KS; Di Quarto F; Waser R; Santamaria M; Valov I Adv Mater; 2017 Nov; 29(43):. PubMed ID: 28984996 [TBL] [Abstract][Full Text] [Related]
9. Emerging memories: resistive switching mechanisms and current status. Jeong DS; Thomas R; Katiyar RS; Scott JF; Kohlstedt H; Petraru A; Hwang CS Rep Prog Phys; 2012 Jul; 75(7):076502. PubMed ID: 22790779 [TBL] [Abstract][Full Text] [Related]
10. Developing an in situ environmental TEM set up for investigations of resistive switching mechanisms in Pt-Pr Kramer T; Mierwaldt D; Scherff M; Kanbach M; Jooss C Ultramicroscopy; 2018 Jan; 184(Pt A):61-70. PubMed ID: 28850867 [TBL] [Abstract][Full Text] [Related]
11. Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics. Tsurumaki-Fukuchi A; Katase T; Ohta H; Arita M; Takahashi Y ACS Appl Mater Interfaces; 2023 Apr; 15(13):16842-16852. PubMed ID: 36952672 [TBL] [Abstract][Full Text] [Related]
12. Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects. Wu X; Yu K; Cha D; Bosman M; Raghavan N; Zhang X; Li K; Liu Q; Sun L; Pey K Adv Sci (Weinh); 2018 Jun; 5(6):1800096. PubMed ID: 29938188 [TBL] [Abstract][Full Text] [Related]
13. Resistive Switching Crossbar Arrays Based on Layered Materials. Lanza M; Hui F; Wen C; Ferrari AC Adv Mater; 2023 Mar; 35(9):e2205402. PubMed ID: 36094019 [TBL] [Abstract][Full Text] [Related]
14. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions. Huang YJ; Chao SC; Lien DH; Wen CY; He JH; Lee SC Sci Rep; 2016 Apr; 6():23945. PubMed ID: 27052322 [TBL] [Abstract][Full Text] [Related]
15. FIB based fabrication of an operative Pt/HfO Zintler A; Kunz U; Pivak Y; Sharath SU; Vogel S; Hildebrandt E; Kleebe HJ; Alff L; Molina-Luna L Ultramicroscopy; 2017 Oct; 181():144-149. PubMed ID: 28558287 [TBL] [Abstract][Full Text] [Related]
16. Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer. Tang G; Zeng F; Chen C; Liu H; Gao S; Song C; Lin Y; Chen G; Pan F Nanoscale; 2013 Jan; 5(1):422-8. PubMed ID: 23187889 [TBL] [Abstract][Full Text] [Related]
19. Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid. Oh SI; Rani JR; Hong SM; Jang JH Nanoscale; 2017 Oct; 9(40):15314-15322. PubMed ID: 28820212 [TBL] [Abstract][Full Text] [Related]
20. Resistive switching in sub-micrometric ZnO polycrystalline films. Conti D; Laurenti M; Porro S; Giovinazzo C; Bianco S; Fra V; Chiolerio A; Pirri CF; Milano G; Ricciardi C Nanotechnology; 2019 Feb; 30(6):065707. PubMed ID: 30523900 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]