These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

249 related articles for article (PubMed ID: 32543550)

  • 1. Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure.
    Velpula RT; Jain B; Bui HQT; Shakiba FM; Jude J; Tumuna M; Nguyen HD; Lenka TR; Nguyen HPT
    Appl Opt; 2020 Jun; 59(17):5276-5281. PubMed ID: 32543550
    [TBL] [Abstract][Full Text] [Related]  

  • 2. On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer.
    Chu C; Tian K; Che J; Shao H; Kou J; Zhang Y; Li Y; Wang M; Zhu Y; Zhang ZH
    Opt Express; 2019 Jun; 27(12):A620-A628. PubMed ID: 31252842
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.
    Zhang ZH; Ju Z; Liu W; Tan ST; Ji Y; Kyaw Z; Zhang X; Hasanov N; Sun XW; Demir HV
    Opt Lett; 2014 Apr; 39(8):2483-6. PubMed ID: 24979024
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure.
    Velpula RT; Jain B; Velpula S; Nguyen HD; Nguyen HPT
    Opt Lett; 2020 Sep; 45(18):5125-5128. PubMed ID: 32932468
    [TBL] [Abstract][Full Text] [Related]  

  • 5. The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer.
    Jamil T; Usman M; Malik S; Jamal H
    Appl Phys A Mater Sci Process; 2021; 127(5):397. PubMed ID: 33967404
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer.
    Lang J; Xu FJ; Ge WK; Liu BY; Zhang N; Sun YH; Wang JM; Wang MX; Xie N; Fang XZ; Kang XN; Qin ZX; Yang XL; Wang XQ; Shen B
    Opt Express; 2019 Sep; 27(20):A1458-A1466. PubMed ID: 31684498
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers.
    Jain B; Velpula RT; Patel M; Sadaf SM; Nguyen HPT
    Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33801072
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
    Che J; Shao H; Kou J; Tian K; Chu C; Hou X; Zhang Y; Sun Q; Zhang ZH
    Nanoscale Res Lett; 2019 Aug; 14(1):268. PubMed ID: 31388778
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer.
    Sharif MN; Usman M; Niass MI; Liou JJ; Wang F; Liu Y
    Nanotechnology; 2021 Nov; 33(7):. PubMed ID: 34438377
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.
    Zhang ZH; Huang Chen SW; Chu C; Tian K; Fang M; Zhang Y; Bi W; Kuo HC
    Nanoscale Res Lett; 2018 Apr; 13(1):122. PubMed ID: 29693213
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Performance enhancement of AlGaN-based 365  nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier.
    He L; Zhao W; Zhang K; He C; Wu H; Liu N; Song W; Chen Z; Li S
    Opt Lett; 2018 Feb; 43(3):515-518. PubMed ID: 29400829
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.
    Xing Z; Wang F; Wang Y; Liou JJ; Liu Y
    Opt Express; 2022 Sep; 30(20):36446-36455. PubMed ID: 36258572
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers.
    Zhang A; Xing Z; Qu Y; Wang F; Liou JJ; Liu Y
    Opt Express; 2024 Mar; 32(6):10146-10157. PubMed ID: 38571233
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?
    Wang W; Chu C; Che J; Hang S; Shao H; Tian K; Zhang Y; Zhang ZH
    Opt Express; 2021 Sep; 29(19):29651-29660. PubMed ID: 34614706
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer.
    Pan S; Chen K; Guo Y; Liu Z; Zhou Y; Zhang R; Zheng Y
    Opt Express; 2022 Dec; 30(25):44933-44942. PubMed ID: 36522906
    [TBL] [Abstract][Full Text] [Related]  

  • 16. UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections.
    Zhang ZH; Chu C; Chiu CH; Lu TC; Li L; Zhang Y; Tian K; Fang M; Sun Q; Kuo HC; Bi W
    Opt Lett; 2017 Nov; 42(21):4533-4536. PubMed ID: 29088206
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier.
    Yu H; Ren Z; Zhang H; Dai J; Chen C; Long S; Sun H
    Opt Express; 2019 Sep; 27(20):A1544-A1553. PubMed ID: 31684505
    [TBL] [Abstract][Full Text] [Related]  

  • 18. On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes.
    Che J; Chu C; Tian K; Kou J; Shao H; Zhang Y; Bi W; Zhang ZH
    Nanoscale Res Lett; 2018 Nov; 13(1):355. PubMed ID: 30411256
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer.
    Hu J; Zhang J; Zhang Y; Zhang H; Long H; Chen Q; Shan M; Du S; Dai J; Chen C
    Nanoscale Res Lett; 2019 Nov; 14(1):347. PubMed ID: 31754922
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Suppressing the efficiency droop in the AlGaN-based UVB LED.
    Muhammad U; Malik S; Khan MA; Hirayama H
    Nanotechnology; 2021 Feb; ():. PubMed ID: 33567413
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 13.