These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
147 related articles for article (PubMed ID: 32545381)
1. A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations. Wu J; Ren N; Guo Q; Sheng K Materials (Basel); 2020 Jun; 13(11):. PubMed ID: 32545381 [TBL] [Abstract][Full Text] [Related]
2. The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes. Xu H; Ren N; Wu J; Zhu Z; Guo Q; Sheng K Materials (Basel); 2021 Jan; 14(3):. PubMed ID: 33572683 [TBL] [Abstract][Full Text] [Related]
3. Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes. Min SJ; Schweitz MA; Nguyen NT; Koo SM J Nanosci Nanotechnol; 2021 Mar; 21(3):2001-2004. PubMed ID: 33404483 [TBL] [Abstract][Full Text] [Related]
4. The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents. Damcevska J; Dimitrijev S; Haasmann D; Tanner P Sci Rep; 2023 Nov; 13(1):19189. PubMed ID: 37932325 [TBL] [Abstract][Full Text] [Related]
5. Carrier lifetime modulation on current capability of SiC PiN diodes in a pulsed system. Xu X; Zhang L; Li L; Li Z; Li J; Zhang J; Dong P Discov Nano; 2023 Oct; 18(1):128. PubMed ID: 37845558 [TBL] [Abstract][Full Text] [Related]
6. High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices. Min SJ; Shin MC; Thi Nguyen N; Oh JM; Koo SM Materials (Basel); 2020 Jan; 13(2):. PubMed ID: 31963426 [TBL] [Abstract][Full Text] [Related]
7. Materials and Processes for Schottky Contacts on Silicon Carbide. Vivona M; Giannazzo F; Roccaforte F Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009445 [TBL] [Abstract][Full Text] [Related]
8. Transient temperature measurement of silicon carbide Schottky barrier diode based on thermal reflection. Wang J; Zhou L; Meng X; Cheng H; Feng S; Zhang Y Rev Sci Instrum; 2024 Jun; 95(6):. PubMed ID: 38829219 [TBL] [Abstract][Full Text] [Related]
9. Investigation of 1200 V SiC MOSFETs' Surge Reliability. Li H; Wang J; Ren N; Xu H; Sheng K Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31323884 [TBL] [Abstract][Full Text] [Related]
14. Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance. Liu Y; Yang R; Wang Y; Zhang Z; Deng X Materials (Basel); 2019 Dec; 12(24):. PubMed ID: 31842506 [TBL] [Abstract][Full Text] [Related]
15. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Li F; Roccaforte F; Greco G; Fiorenza P; La Via F; Pérez-Tomas A; Evans JE; Fisher CA; Monaghan FA; Mawby PA; Jennings M Materials (Basel); 2021 Oct; 14(19):. PubMed ID: 34640228 [TBL] [Abstract][Full Text] [Related]