These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
149 related articles for article (PubMed ID: 32549448)
1. Low dark current and high gain-bandwidth product of avalanche photodiodes: optimization and realization. Wang H; Yang X; Wang R; He T; Liu K Opt Express; 2020 May; 28(11):16211-16229. PubMed ID: 32549448 [TBL] [Abstract][Full Text] [Related]
2. The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation. Liu JJ; Ho WJ; Chen JY; Lin JN; Teng CJ; Yu CC; Li YC; Chang MJ Sensors (Basel); 2019 Aug; 19(15):. PubMed ID: 31382464 [TBL] [Abstract][Full Text] [Related]
3. Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes. Cao S; Zhao Y; Ur Rehman S; Feng S; Zuo Y; Li C; Zhang L; Cheng B; Wang Q Nanoscale Res Lett; 2018 May; 13(1):158. PubMed ID: 29785568 [TBL] [Abstract][Full Text] [Related]
4. Optimization of InGaAs/InAlAs Avalanche Photodiodes. Chen J; Zhang Z; Zhu M; Xu J; Li X Nanoscale Res Lett; 2017 Dec; 12(1):33. PubMed ID: 28091945 [TBL] [Abstract][Full Text] [Related]
5. Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency. Kou J; Tian K; Chu C; Zhang Y; Zhou X; Feng Z; Zhang ZH Nanoscale Res Lett; 2019 Dec; 14(1):396. PubMed ID: 31889233 [TBL] [Abstract][Full Text] [Related]
6. Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes. Liu A; Zhang J; Xing H; Yang Y Appl Opt; 2019 Jul; 58(19):5339-5346. PubMed ID: 31503634 [TBL] [Abstract][Full Text] [Related]
7. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product. Zaoui WS; Chen HW; Bowers JE; Kang Y; Morse M; Paniccia MJ; Pauchard A; Campbell JC Opt Express; 2009 Jul; 17(15):12641-9. PubMed ID: 19654668 [TBL] [Abstract][Full Text] [Related]
8. Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps. Liu JJ; Ho WJ; Chiang CC; Teng CJ; Yu CC; Li YC Sensors (Basel); 2018 Aug; 18(9):. PubMed ID: 30149627 [TBL] [Abstract][Full Text] [Related]
9. Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes. Cao S; Zhao Y; Feng S; Zuo Y; Zhang L; Cheng B; Li C Nanoscale Res Lett; 2019 Jan; 14(1):3. PubMed ID: 30607636 [TBL] [Abstract][Full Text] [Related]
16. Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model. Li J; Xiong B; Sun C; Miao D; Luo Y Opt Express; 2015 Aug; 23(17):21615-23. PubMed ID: 26368140 [TBL] [Abstract][Full Text] [Related]
17. Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector. Chen X; Jiao J; Yao L; Ji R; Rao Y; Wei H; Lin G; Li C; Ke S; Chen S Appl Opt; 2023 Apr; 62(12):3125-3131. PubMed ID: 37133160 [TBL] [Abstract][Full Text] [Related]
18. Multiplication theory for dynamically biased avalanche photodiodes: new limits for gain bandwidth product. Hayat MM; Ramirez DA Opt Express; 2012 Mar; 20(7):8024-40. PubMed ID: 22453474 [TBL] [Abstract][Full Text] [Related]
19. InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product. Xie S; Zhou X; Zhang S; Thomson DJ; Chen X; Reed GT; Ng JS; Tan CH Opt Express; 2016 Oct; 24(21):24242-24247. PubMed ID: 27828254 [TBL] [Abstract][Full Text] [Related]
20. Back-illuminated AlGaN heterostructure solar-blind avalanche photodiodes with one-dimensional photonic crystal filter. Cai Q; Luo W; Yuan R; You H; Li Q; Li M; Chen D; Lu H; Zhang R; Zheng Y Opt Express; 2020 Mar; 28(5):6027-6035. PubMed ID: 32225860 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]