These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
22. Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films. Guo Y; Guo B; Dong W; Li H; Liu H Nanotechnology; 2013 Jul; 24(27):275201. PubMed ID: 23759921 [TBL] [Abstract][Full Text] [Related]
23. Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film. Yang CF; Chen KH; Chen YC; Chang TC IEEE Trans Ultrason Ferroelectr Freq Control; 2007 Sep; 54(9):1726-30. PubMed ID: 17941379 [TBL] [Abstract][Full Text] [Related]
24. Data retention and low voltage operation of Al Shekhawat A; Walters G; Yang N; Guo J; Nishida T; Moghaddam S Nanotechnology; 2020 Sep; 31(39):39LT01. PubMed ID: 32541100 [TBL] [Abstract][Full Text] [Related]
25. Ferroelectric gated electrical transport in CdS nanotetrapods. Fu W; Qin S; Liu L; Kim TH; Hellstrom S; Wang W; Liang W; Bai X; Li AP; Wang E Nano Lett; 2011 May; 11(5):1913-8. PubMed ID: 21513340 [TBL] [Abstract][Full Text] [Related]
26. De Novo Discovery of [Hdabco]BF Shi PP; Tang YY; Li PF; Ye HY; Xiong RG J Am Chem Soc; 2017 Jan; 139(3):1319-1324. PubMed ID: 28058833 [TBL] [Abstract][Full Text] [Related]
27. Area-Scalable 10 Takahashi M; Sakai S Nanomaterials (Basel); 2021 Jan; 11(1):. PubMed ID: 33406688 [TBL] [Abstract][Full Text] [Related]
28. Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film. Xu T; Xiang L; Xu M; Xie W; Wang W Sci Rep; 2017 Aug; 7(1):8890. PubMed ID: 28827595 [TBL] [Abstract][Full Text] [Related]
29. Ferroelectric field-effect transistors based on HfO Mulaosmanovic H; Breyer ET; Dünkel S; Beyer S; Mikolajick T; Slesazeck S Nanotechnology; 2021 Sep; 32(50):. PubMed ID: 34320479 [TBL] [Abstract][Full Text] [Related]
30. Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors. Fabiano S; Crispin X; Berggren M ACS Appl Mater Interfaces; 2014 Jan; 6(1):438-42. PubMed ID: 24251907 [TBL] [Abstract][Full Text] [Related]
31. Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching. Zhang Y; Xiong W; Chen W; Luo X; Zhang X; Zheng Y Phys Chem Chem Phys; 2020 Feb; 22(8):4685-4691. PubMed ID: 32057040 [TBL] [Abstract][Full Text] [Related]
32. Growth and the microstructural and ferroelectric characterization of oriented BaMgF(4) thin films. Sinharoy S; Buhay H; Burke MG; Lampe DR; Pollak TM IEEE Trans Ultrason Ferroelectr Freq Control; 1991; 38(6):663-71. PubMed ID: 18267632 [TBL] [Abstract][Full Text] [Related]
33. A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory. Fang H; Li Q; He W; Li J; Xue Q; Xu C; Zhang L; Ren T; Dong G; Chan HL; Dai J; Yan Q Nanoscale; 2015 Nov; 7(41):17306-11. PubMed ID: 26350823 [TBL] [Abstract][Full Text] [Related]
34. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels. Van NH; Lee JH; Whang D; Kang DJ Nanomicro Lett; 2015; 7(1):35-41. PubMed ID: 30464954 [TBL] [Abstract][Full Text] [Related]
35. Memory Window and Endurance Improvement of Hf Xiao W; Liu C; Peng Y; Zheng S; Feng Q; Zhang C; Zhang J; Hao Y; Liao M; Zhou Y Nanoscale Res Lett; 2019 Jul; 14(1):254. PubMed ID: 31350697 [TBL] [Abstract][Full Text] [Related]
36. Improved Ferroelectric Performance of Mg-Doped LiNbO Zhang Y; Ren QH; Chai XJ; Jiang J; Yang JG; Jiang AQ Nanoscale Res Lett; 2019 Apr; 14(1):131. PubMed ID: 30993547 [TBL] [Abstract][Full Text] [Related]
37. Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf Hyun SD; Park HW; Kim YJ; Park MH; Lee YH; Kim HJ; Kwon YJ; Moon T; Kim KD; Lee YB; Kim BS; Hwang CS ACS Appl Mater Interfaces; 2018 Oct; 10(41):35374-35384. PubMed ID: 30247016 [TBL] [Abstract][Full Text] [Related]
38. Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction. Lederer M; Kämpfe T; Vogel N; Utess D; Volkmann B; Ali T; Olivo R; Müller J; Beyer S; Trentzsch M; Seidel K; Eng ALM Nanomaterials (Basel); 2020 Feb; 10(2):. PubMed ID: 32098415 [TBL] [Abstract][Full Text] [Related]
39. Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates. Ma C; Gong Y; Lu R; Brown E; Ma B; Li J; Wu J Nanoscale; 2015 Nov; 7(44):18489-97. PubMed ID: 26331952 [TBL] [Abstract][Full Text] [Related]
40. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure. Kim YJ; Park MH; Lee YH; Kim HJ; Jeon W; Moon T; Kim KD; Jeong DS; Yamada H; Hwang CS Sci Rep; 2016 Jan; 6():19039. PubMed ID: 26742878 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]