136 related articles for article (PubMed ID: 32664358)
1. Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD.
Ito K; Lu W; Sone N; Miyamoto Y; Okuda R; Iwaya M; Tekeuchi T; Kamiyama S; Akasaki I
Nanomaterials (Basel); 2020 Jul; 10(7):. PubMed ID: 32664358
[TBL] [Abstract][Full Text] [Related]
2. Correlation between Optical and Structural Characteristics in Coaxial GaInN/GaN Multiple Quantum Shell Nanowires with AlGaN Spacers.
Lu W; Miyamoto Y; Okuda R; Ito K; Sone N; Iwaya M; Tekeuchi T; Kamiyama S; Akasaki I
ACS Appl Mater Interfaces; 2020 Nov; 12(45):51082-51091. PubMed ID: 33119267
[TBL] [Abstract][Full Text] [Related]
3. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs.
Ito K; Lu W; Katsuro S; Okuda R; Nakayama N; Sone N; Mizutani K; Iwaya M; Takeuchi T; Kamiyama S; Akasaki I
Nanoscale Adv; 2021 Dec; 4(1):102-110. PubMed ID: 36132962
[TBL] [Abstract][Full Text] [Related]
4. Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires.
Lu W; Sone N; Goto N; Iida K; Suzuki A; Han DP; Iwaya M; Tekeuchi T; Kamiyama S; Akasaki I
Nanoscale; 2019 Oct; 11(40):18746-18757. PubMed ID: 31591631
[TBL] [Abstract][Full Text] [Related]
5. Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires.
Lu W; Nakayama N; Ito K; Katsuro S; Sone N; Miyamoto Y; Okuno K; Iwaya M; Takeuchi T; Kamiyama S; Akasaki I
ACS Appl Mater Interfaces; 2021 Nov; 13(45):54486-54496. PubMed ID: 34730933
[TBL] [Abstract][Full Text] [Related]
6. Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs.
Inaba S; Lu W; Ito K; Katsuro S; Nakayama N; Shima A; Jinno Y; Yamamura S; Sone N; Huang K; Iwaya M; Takeuchi T; Kamiyama S
ACS Appl Mater Interfaces; 2022 Oct; ():. PubMed ID: 36302205
[TBL] [Abstract][Full Text] [Related]
7. Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.
Ra YH; Navamathavan R; Park JH; Lee CR
Nano Lett; 2013 Aug; 13(8):3506-16. PubMed ID: 23701263
[TBL] [Abstract][Full Text] [Related]
8. Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs.
Inaba S; Lu W; Shima A; Ii S; Takahashi M; Yamanaka Y; Hattori Y; Kubota K; Huang K; Iwaya M; Takeuchi T; Kamiyama S
Nanoscale Adv; 2024 Apr; 6(9):2306-2318. PubMed ID: 38694475
[TBL] [Abstract][Full Text] [Related]
9. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
Ra YH; Navamathavan R; Park JH; Lee CR
ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
[TBL] [Abstract][Full Text] [Related]
10. Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy.
Nami M; Eller RF; Okur S; Rishinaramangalam AK; Liu S; Brener I; Feezell DF
Nanotechnology; 2017 Jan; 28(2):025202. PubMed ID: 27905321
[TBL] [Abstract][Full Text] [Related]
11. Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction.
Miyamoto Y; Lu W; Sone N; Okuda R; Ito K; Okuno K; Mizutani K; Iida K; Ohya M; Iwaya M; Takeuchi T; Kamiyama S; Akasaki I
ACS Appl Mater Interfaces; 2021 Aug; 13(31):37883-37892. PubMed ID: 34313418
[TBL] [Abstract][Full Text] [Related]
12. Core-Shell Tunnel Junction Nanowire White-Light-Emitting Diode.
Ra YH; Lee CR
Nano Lett; 2020 Jun; 20(6):4162-4168. PubMed ID: 32105489
[TBL] [Abstract][Full Text] [Related]
13. Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.
Soh CB; Liu W; Yong AM; Chua SJ; Chow SY; Tripathy S; Tan RJ
Nanoscale Res Lett; 2010 Aug; 5(11):1788-1794. PubMed ID: 21124627
[TBL] [Abstract][Full Text] [Related]
14. Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition.
Ra YH; Navamathavan R; Yoo HI; Lee CR
Nano Lett; 2014 Mar; 14(3):1537-45. PubMed ID: 24564712
[TBL] [Abstract][Full Text] [Related]
15. Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires.
Johar MA; Song HG; Waseem A; Kang JH; Ha JS; Cho YH; Ryu SW
Nanoscale; 2019 Jun; 11(22):10932-10943. PubMed ID: 31139802
[TBL] [Abstract][Full Text] [Related]
16. Performance enhancement of nitrogen-polar GaN-based light-emitting diodes prepared by metalorganic chemical vapor deposition.
Wang Y; Wang Y; Zhang L; Niu Y; Yu J; Ma H; Lu C; Shi Z; Deng G; Zhang B; Zhang Y
Opt Lett; 2022 Aug; 47(15):3628-3631. PubMed ID: 35913275
[TBL] [Abstract][Full Text] [Related]
17. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission.
Vermeersch R; Jacopin G; Castioni F; Rouvière JL; García-Cristóbal A; Cros A; Pernot J; Daudin B
Nanotechnology; 2023 Apr; 34(27):. PubMed ID: 37023726
[TBL] [Abstract][Full Text] [Related]
18. Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors.
Guan N; Dai X; Messanvi A; Zhang H; Yan J; Gautier E; Bougerol C; Julien FH; Durand C; Eymery J; Tchernycheva M
ACS Photonics; 2016 Apr; 3(4):597-603. PubMed ID: 27331079
[TBL] [Abstract][Full Text] [Related]
19. Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.
Han DP; Iwaya M; Takeuchi T; Kamiyama S
ACS Appl Mater Interfaces; 2022 Jun; 14(22):26264-26270. PubMed ID: 35609181
[TBL] [Abstract][Full Text] [Related]
20. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.
Guo W; Zhang M; Banerjee A; Bhattacharya P
Nano Lett; 2010 Sep; 10(9):3355-9. PubMed ID: 20701296
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
