These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

279 related articles for article (PubMed ID: 32676687)

  • 1. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction.
    Sun T; Luo X; Wei J; Yang C; Zhang B
    Nanoscale Res Lett; 2020 Jul; 15(1):149. PubMed ID: 32676687
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer.
    Sun Y; Wang Y; Tang J; Wang W; Huang Y; Kuang X
    Micromachines (Basel); 2019 Jan; 10(2):. PubMed ID: 30691138
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.
    Xu R; Chen P; Zhou J; Li Y; Li Y; Zhu T; Cheng K; Chen D; Xie Z; Ye J; Liu B; Xiu X; Han P; Shi Y; Zhang R; Zheng Y
    Small; 2022 Sep; 18(37):e2107301. PubMed ID: 35869035
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode.
    Xu T; Tang Z; Zhou Z; Zhou B
    Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374706
    [TBL] [Abstract][Full Text] [Related]  

  • 5. A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode.
    Zhang A; Zhou Q; Yang C; Shi Y; Chen W; Li Z; Zhang B
    Nanoscale Res Lett; 2019 Jan; 14(1):23. PubMed ID: 30645720
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates.
    Kim ZS; Lee HS; Bae SB; Ahn H; Lee SH; Lim JW; Kang DM
    J Nanosci Nanotechnol; 2021 Aug; 21(8):4429-4433. PubMed ID: 33714339
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures.
    Dub M; Sai P; Przewłoka A; Krajewska A; Sakowicz M; Prystawko P; Kacperski J; Pasternak I; Cywiński G; But D; Knap W; Rumyantsev S
    Materials (Basel); 2020 Sep; 13(18):. PubMed ID: 32957632
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond.
    Kim ZS; Lee HS; Bae SB; Nam E; Lim JW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6119-6122. PubMed ID: 31026919
    [TBL] [Abstract][Full Text] [Related]  

  • 9. GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance.
    Yang X; Duan B; Yang Y
    Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374753
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications.
    Alathbah M
    Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677063
    [TBL] [Abstract][Full Text] [Related]  

  • 11. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
    Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
    Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure.
    Li Y; Xu L; Guo Z; Sun H
    Micromachines (Basel); 2022 Aug; 13(8):. PubMed ID: 36014195
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
    Fisichella G; Greco G; Roccaforte F; Giannazzo F
    Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
    Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
    Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Fabrication of Ga
    Jiao T; Chen W; Li Z; Diao Z; Dang X; Chen P; Dong X; Zhang Y; Zhang B
    Materials (Basel); 2022 Nov; 15(23):. PubMed ID: 36499777
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.
    Minh Triet N; Thai Duy L; Hwang BU; Hanif A; Siddiqui S; Park KH; Cho CY; Lee NE
    ACS Appl Mater Interfaces; 2017 Sep; 9(36):30722-30732. PubMed ID: 28825301
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode.
    Zhang H; Kang X; Zheng Y; Wu H; Wei K; Liu X; Ye T; Jin Z
    Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832708
    [TBL] [Abstract][Full Text] [Related]  

  • 19. On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate.
    Wang Z; Wang Z; Zhang Z; Yang D; Yao Y
    Nanoscale Res Lett; 2019 Apr; 14(1):128. PubMed ID: 30972597
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure.
    Do HB; Zhou J; De Souza MM
    ACS Appl Electron Mater; 2022 Oct; 4(10):4808-4813. PubMed ID: 36311441
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 14.