These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

131 related articles for article (PubMed ID: 32731347)

  • 1. Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells.
    Naskar N; Schneidereit MF; Huber F; Chakrabortty S; Veith L; Mezger M; Kirste L; Fuchs T; Diemant T; Weil T; Behm RJ; Thonke K; Scholz F
    Sensors (Basel); 2020 Jul; 20(15):. PubMed ID: 32731347
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Influence of surface hydroxylation on 3-aminopropyltriethoxysilane growth mode during chemical functionalization of GaN Surfaces: an angle-resolved X-ray photoelectron spectroscopy Study.
    Arranz A; Palacio C; García-Fresnadillo D; Orellana G; Navarro A; Muñoz E
    Langmuir; 2008 Aug; 24(16):8667-71. PubMed ID: 18642858
    [TBL] [Abstract][Full Text] [Related]  

  • 3. GaN nanowire functionalized with atomic layer deposition techniques for enhanced immobilization of biomolecules.
    Guo DJ; Abdulagatov AI; Rourke DM; Bertness KA; George SM; Lee YC; Tan W
    Langmuir; 2010 Dec; 26(23):18382-91. PubMed ID: 21033757
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Photochemical Modification of Single Crystalline GaN Film Using n-Alkene with Different Carbon Chain Lengths as Biolinker.
    Wang C; Zhuang H; Huang N; Heuser S; Schlemper C; Zhai Z; Liu B; Staedler T; Jiang X
    Langmuir; 2016 Jun; 32(23):5731-7. PubMed ID: 27217218
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence.
    Peczonczyk SL; Mukherjee J; Carim AI; Maldonado S
    Langmuir; 2012 Mar; 28(10):4672-82. PubMed ID: 22372474
    [TBL] [Abstract][Full Text] [Related]  

  • 6. In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.
    Wilkins SJ; Greenough M; Arellano C; Paskova T; Ivanisevic A
    Langmuir; 2014 Mar; 30(8):2038-46. PubMed ID: 24502420
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers.
    Kim H; Colavita PE; Metz KM; Nichols BM; Sun B; Uhlrich J; Wang X; Kuech TF; Hamers RJ
    Langmuir; 2006 Sep; 22(19):8121-6. PubMed ID: 16952251
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Thermal functionalization of GaN surfaces with 1-alkenes.
    Schwarz SU; Cimalla V; Eichapfel G; Himmerlich M; Krischok S; Ambacher O
    Langmuir; 2013 May; 29(21):6296-301. PubMed ID: 23617559
    [TBL] [Abstract][Full Text] [Related]  

  • 9. External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers.
    Auzelle T; Ullrich F; Hietzschold S; Sinito C; Brackmann S; Kowalsky W; Mankel E; Brandt O; Lovrincic R; Fernández-Garrido S
    ACS Appl Mater Interfaces; 2021 Jan; 13(3):4626-4635. PubMed ID: 33439013
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Tailoring GaN semiconductor surfaces with biomolecules.
    Estephan E; Larroque C; Cuisinier FJ; Bálint Z; Gergely C
    J Phys Chem B; 2008 Jul; 112(29):8799-805. PubMed ID: 18582017
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Site-selective biofunctionalization of aluminum nitride surfaces using patterned organosilane self-assembled monolayers.
    Chiu CS; Lee HM; Gwo S
    Langmuir; 2010 Feb; 26(4):2969-74. PubMed ID: 19810718
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhanced current transport and injection in thin-film gallium-nitride light-emitting diodes by laser-based doping.
    Kim SJ; Kim KH; Chung HY; Shin HW; Lee BR; Jeong T; Park HJ; Kim TG
    ACS Appl Mater Interfaces; 2014 Oct; 6(19):16601-9. PubMed ID: 25215432
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Novel material concepts of transducers for chemical and biosensors.
    Yakimova R; Steinhoff G; Petoral RM; Vahlberg C; Khranovskyy V; Yazdi GR; Uvdal K; Lloyd Spetz A
    Biosens Bioelectron; 2007 Jun; 22(12):2780-5. PubMed ID: 17289367
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electronic and optical properties of Te-doped GaN monolayer before and after adsorption of dimethylmercury - DFT+U/TDDFT & DFT-D2 methods.
    Safaei Ardakani Y; Moradi M
    J Mol Graph Model; 2021 May; 104():107837. PubMed ID: 33465525
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Direct grafting of long-lived luminescent indicator dyes to GaN light-emitting diodes for chemical microsensor development.
    López-Gejo J; Navarro-Tobar Á; Arranz A; Palacio C; Muñoz E; Orellana G
    ACS Appl Mater Interfaces; 2011 Oct; 3(10):3846-54. PubMed ID: 21942444
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties.
    Cui Z; Wang X; Li E; Ding Y; Sun C; Sun M
    Nanoscale Res Lett; 2018 Jul; 13(1):207. PubMed ID: 29995262
    [TBL] [Abstract][Full Text] [Related]  

  • 17. CH₄ Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films.
    Kusaba A; Li G; Kempisty P; von Spakovsky MR; Kangawa Y
    Materials (Basel); 2019 Mar; 12(6):. PubMed ID: 30909584
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Atomically Thin Delta-Doping of Self-Assembled Molecular Monolayers by Flash Lamp Annealing for Si-Based Deep UV Photodiodes.
    Chang S; He J; Prucnal S; Zhang J; Zhang J; Zhou S; Helm M; Dan Y
    ACS Appl Mater Interfaces; 2022 Jul; 14(26):30000-30006. PubMed ID: 35666627
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides.
    Jewett SA; Makowski MS; Andrews B; Manfra MJ; Ivanisevic A
    Acta Biomater; 2012 Feb; 8(2):728-33. PubMed ID: 22019517
    [TBL] [Abstract][Full Text] [Related]  

  • 20. DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces.
    Sznajder M; Hrytsak R
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34772058
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.