These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS Lee C; Rathi S; Khan MA; Lim D; Kim Y; Yun SJ; Youn DH; Watanabe K; Taniguchi T; Kim GH Nanotechnology; 2018 Aug; 29(33):335202. PubMed ID: 29786609 [TBL] [Abstract][Full Text] [Related]
4. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. Lee GH; Cui X; Kim YD; Arefe G; Zhang X; Lee CH; Ye F; Watanabe K; Taniguchi T; Kim P; Hone J ACS Nano; 2015 Jul; 9(7):7019-26. PubMed ID: 26083310 [TBL] [Abstract][Full Text] [Related]
5. Bias dependent variability of low-frequency noise in single-layer graphene FETs. Mavredakis N; Cortadella RG; Illa X; Schaefer N; Calia AB; Anton-Guimerà-Brunet ; Garrido JA; Jiménez D Nanoscale Adv; 2020 Nov; 2(11):5450-5460. PubMed ID: 36132035 [TBL] [Abstract][Full Text] [Related]
6. Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices. Kumar C; Kuiri M; Jung J; Das T; Das A Nano Lett; 2016 Feb; 16(2):1042-9. PubMed ID: 26765292 [TBL] [Abstract][Full Text] [Related]
7. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor. Feijoo PC; Pasadas F; Iglesias JM; Martín MJ; Rengel R; Li C; Kim W; Riikonen J; Lipsanen H; Jiménez D Nanotechnology; 2017 Dec; 28(48):485203. PubMed ID: 28972503 [TBL] [Abstract][Full Text] [Related]
8. Study of Graphene-based 2D-Heterostructure Device Fabricated by All-Dry Transfer Process. Tien DH; Park JY; Kim KB; Lee N; Choi T; Kim P; Taniguchi T; Watanabe K; Seo Y ACS Appl Mater Interfaces; 2016 Feb; 8(5):3072-8. PubMed ID: 26771834 [TBL] [Abstract][Full Text] [Related]
9. Tunable 1/ Tian M; Hu Q; Gu C; Xiong X; Zhang Z; Li X; Wu Y ACS Appl Mater Interfaces; 2020 Apr; 12(15):17686-17690. PubMed ID: 32189495 [TBL] [Abstract][Full Text] [Related]
10. HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise. Viti L; Purdie DG; Lombardo A; Ferrari AC; Vitiello MS Nano Lett; 2020 May; 20(5):3169-3177. PubMed ID: 32301617 [TBL] [Abstract][Full Text] [Related]
11. Antenna Enhanced Graphene THz Emitter and Detector. Tong J; Muthee M; Chen SY; Yngvesson SK; Yan J Nano Lett; 2015 Aug; 15(8):5295-301. PubMed ID: 26218887 [TBL] [Abstract][Full Text] [Related]
12. High-Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride. Yamoah MA; Yang W; Pop E; Goldhaber-Gordon D ACS Nano; 2017 Oct; 11(10):9914-9919. PubMed ID: 28880529 [TBL] [Abstract][Full Text] [Related]
13. Room temperature nanostructured graphene transistor with high on/off ratio. Dragoman M; Dinescu A; Dragoman D Nanotechnology; 2017 Jan; 28(1):015201. PubMed ID: 27893447 [TBL] [Abstract][Full Text] [Related]
14. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. Rumyantsev S; Liu G; Stillman W; Shur M; Balandin AA J Phys Condens Matter; 2010 Oct; 22(39):395302. PubMed ID: 21403224 [TBL] [Abstract][Full Text] [Related]
15. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. Lee GH; Yu YJ; Cui X; Petrone N; Lee CH; Choi MS; Lee DY; Lee C; Yoo WJ; Watanabe K; Taniguchi T; Nuckolls C; Kim P; Hone J ACS Nano; 2013 Sep; 7(9):7931-6. PubMed ID: 23924287 [TBL] [Abstract][Full Text] [Related]
16. Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN. Wang JI; Yang Y; Chen YA; Watanabe K; Taniguchi T; Churchill HO; Jarillo-Herrero P Nano Lett; 2015 Mar; 15(3):1898-903. PubMed ID: 25654184 [TBL] [Abstract][Full Text] [Related]
17. Mobility-dependent low-frequency noise in graphene field-effect transistors. Zhang Y; Mendez EE; Du X ACS Nano; 2011 Oct; 5(10):8124-30. PubMed ID: 21913642 [TBL] [Abstract][Full Text] [Related]
18. Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms. Miyakawa N; Shinagawa A; Kajiwara Y; Ushiba S; Ono T; Kanai Y; Tani S; Kimura M; Matsumoto K Sensors (Basel); 2021 Nov; 21(22):. PubMed ID: 34833531 [TBL] [Abstract][Full Text] [Related]
19. Room-temperature negative differential resistance in graphene field effect transistors: experiments and theory. Sharma P; Bernard LS; Bazigos A; Magrez A; Ionescu AM ACS Nano; 2015 Jan; 9(1):620-5. PubMed ID: 25551735 [TBL] [Abstract][Full Text] [Related]