These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
129 related articles for article (PubMed ID: 32864950)
1. Facile and Reversible Carrier-Type Manipulation of Layered MoTe Li M; Lin CY; Chang YM; Yang SH; Lee MP; Chen CF; Lee KC; Yang FS; Chou Y; Lin YC; Ueno K; Shi Y; Chou YC; Tsukagoshi K; Lin YF ACS Appl Mater Interfaces; 2020 Sep; 12(38):42918-42924. PubMed ID: 32864950 [TBL] [Abstract][Full Text] [Related]
2. Controlling Polarity of MoTe Liu X; Islam A; Guo J; Feng PX ACS Nano; 2020 Feb; 14(2):1457-1467. PubMed ID: 31909988 [TBL] [Abstract][Full Text] [Related]
3. Carrier-Type Modulation and Mobility Improvement of Thin MoTe Qu D; Liu X; Huang M; Lee C; Ahmed F; Kim H; Ruoff RS; Hone J; Yoo WJ Adv Mater; 2017 Oct; 29(39):. PubMed ID: 28845903 [TBL] [Abstract][Full Text] [Related]
4. Strain Engineering for Enhancing Carrier Mobility in MoTe Shafi AM; Uddin MG; Cui X; Ali F; Ahmed F; Radwan M; Das S; Mehmood N; Sun Z; Lipsanen H Adv Sci (Weinh); 2023 Oct; 10(29):e2303437. PubMed ID: 37551999 [TBL] [Abstract][Full Text] [Related]
5. Reversible and Precisely Controllable p/n-Type Doping of MoTe Chang YM; Yang SH; Lin CY; Chen CH; Lien CH; Jian WB; Ueno K; Suen YW; Tsukagoshi K; Lin YF Adv Mater; 2018 Mar; 30(13):e1706995. PubMed ID: 29430746 [TBL] [Abstract][Full Text] [Related]
6. P/N-Type Conversion of 2D MoTe Cheng Z; Jia X; Han B; Li M; Xu W; Li Y; Gao P; Dai L ACS Appl Mater Interfaces; 2024 Jul; 16(28):36539-36546. PubMed ID: 38973165 [TBL] [Abstract][Full Text] [Related]
7. Defect Engineering of MoTe Jeong Y; Han B; Tamayo A; Claes N; Bals S; Samorì P ACS Nano; 2024 Jul; 18(28):18334-18343. PubMed ID: 38960378 [TBL] [Abstract][Full Text] [Related]
8. Conversion of Charge Carrier Polarity in MoTe Kim H; Uddin I; Watanabe K; Taniguchi T; Whang D; Kim GH Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242116 [TBL] [Abstract][Full Text] [Related]
9. Phase-Engineered Molybdenum Telluride/Black Phosphorus Van der Waals Heterojunctions for Tunable Multivalued Logic. Hassan Y; Srivastava PK; Singh B; Abbas MS; Ali F; Yoo WJ; Lee C ACS Appl Mater Interfaces; 2020 Mar; 12(12):14119-14124. PubMed ID: 32108466 [TBL] [Abstract][Full Text] [Related]
10. Atomic Layer MoTe Liu X; Islam A; Yang N; Odhner B; Tupta MA; Guo J; Feng PX ACS Nano; 2021 Dec; 15(12):19733-19742. PubMed ID: 34913336 [TBL] [Abstract][Full Text] [Related]
12. Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors. Pezeshki A; Hosseini Shokouh SH; Jeon PJ; Shackery I; Kim JS; Oh IK; Jun SC; Kim H; Im S ACS Nano; 2016 Jan; 10(1):1118-25. PubMed ID: 26631357 [TBL] [Abstract][Full Text] [Related]
13. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning. Nakaharai S; Yamamoto M; Ueno K; Tsukagoshi K ACS Appl Mater Interfaces; 2016 Jun; 8(23):14732-9. PubMed ID: 27203118 [TBL] [Abstract][Full Text] [Related]
14. Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing. Chen J; Feng Z; Fan S; Shi S; Yue Y; Shen W; Xie Y; Wu E; Sun C; Liu J; Zhang H; Pang W; Sun D; Feng W; Feng Y; Wu S; Zhang D ACS Appl Mater Interfaces; 2017 Sep; 9(35):30107-30114. PubMed ID: 28816041 [TBL] [Abstract][Full Text] [Related]
19. Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly. Xu X; Liu S; Han B; Han Y; Yuan K; Xu W; Yao X; Li P; Yang S; Gong W; Muller DA; Gao P; Ye Y; Dai L Nano Lett; 2019 Oct; 19(10):6845-6852. PubMed ID: 31478675 [TBL] [Abstract][Full Text] [Related]
20. Control of polarity in multilayer MoTe Rani A; DiCamillo K; Krylyuk S; Debnath R; Taheri P; Paranjape M; Korman CE; Zaghloul ME; Davydov AV Proc SPIE Int Soc Opt Eng; 2018; 10725():. PubMed ID: 33304028 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]