These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

220 related articles for article (PubMed ID: 32869823)

  • 1. Oxygen vacancy injection-induced resistive switching in combined mobile and static gradient doped tin oxide nanorods.
    Herzog T; Weitzel N; Polarz S
    Nanoscale; 2020 Sep; 12(35):18322-18332. PubMed ID: 32869823
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Noble Metal-Free Inorganic Photocatalyst Consisting of Antimony-Doped Tin Oxide Nanorod and Titanium oxide for Two-Electron Oxygen Reduction Reaction.
    Suzuki H; Yamauchi J; Naya SI; Sugime H; Tada H
    Chemphyschem; 2022 Aug; 23(15):e202200029. PubMed ID: 35604808
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO₂-Based Resistive Random Access Memory Devices with Different Electrode Materials.
    Khorolsuren B; Lu S; Sun C; Jin F; Mo W; Song J; Dong K
    J Nanosci Nanotechnol; 2020 Oct; 20(10):6489-6494. PubMed ID: 32385003
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Antimony-doped tin oxide nanorods as a transparent conducting electrode for enhancing photoelectrochemical oxidation of water by hematite.
    Sun Y; Chemelewski WD; Berglund SP; Li C; He H; Shi G; Mullins CB
    ACS Appl Mater Interfaces; 2014 Apr; 6(8):5494-9. PubMed ID: 24665964
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Tuning resistive switching characteristics of tantalum oxide memristors through Si doping.
    Kim S; Choi S; Lee J; Lu WD
    ACS Nano; 2014 Oct; 8(10):10262-9. PubMed ID: 25255038
    [TBL] [Abstract][Full Text] [Related]  

  • 6. In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface.
    Baek K; Park S; Park J; Kim YM; Hwang H; Oh SH
    Nanoscale; 2017 Jan; 9(2):582-593. PubMed ID: 27886327
    [TBL] [Abstract][Full Text] [Related]  

  • 7. A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments.
    Liu Y; Ye C; Chang KC; Li L; Jiang B; Xia C; Liu L; Zhang X; Liu X; Xia T; Peng Z; Cao G; Cheng G; Ke S; Wang J
    Small; 2020 Nov; 16(46):e2004619. PubMed ID: 33053256
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Impact of oxygen exchange reaction at the ohmic interface in Ta
    Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V
    Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO
    Nili H; Ahmed T; Walia S; Ramanathan R; Kandjani AE; Rubanov S; Kim J; Kavehei O; Bansal V; Bhaskaran M; Sriram S
    Nanotechnology; 2016 Dec; 27(50):505210. PubMed ID: 27861164
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient.
    Aziz T; Wei S; Sun Y; Ma LP; Pei S; Dong S; Ren W; Liu Q; Cheng HM; Sun DM
    Nanoscale; 2021 Feb; 13(4):2448-2455. PubMed ID: 33464264
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM.
    Zhang Z; Wang F; Hu K; She Y; Song S; Song Z; Zhang K
    Materials (Basel); 2021 Jun; 14(12):. PubMed ID: 34208616
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Pt/WO3/FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing.
    Shi T; Yin XB; Yang R; Guo X
    Phys Chem Chem Phys; 2016 Apr; 18(14):9338-43. PubMed ID: 26996120
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Resistive switching and role of interfaces in memristive devices based on amorphous NbO
    Leonetti G; Fretto M; Bejtka K; Olivetti ES; Pirri FC; De Leo N; Valov I; Milano G
    Phys Chem Chem Phys; 2023 May; 25(21):14766-14777. PubMed ID: 37145117
    [TBL] [Abstract][Full Text] [Related]  

  • 14. SnO
    Ismail M; Mahata C; Kang M; Kim S
    Nanomaterials (Basel); 2023 Sep; 13(18):. PubMed ID: 37764635
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO
    Dastgeer G; Afzal AM; Aziz J; Hussain S; Jaffery SHA; Kim DK; Imran M; Assiri MA
    Materials (Basel); 2021 Dec; 14(24):. PubMed ID: 34947133
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Highly Conductive Sb-SnO
    Chen Q; Thimsen E
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25168-25177. PubMed ID: 32393020
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Sb-Doped SnO
    Han H; Kment S; Karlicky F; Wang L; Naldoni A; Schmuki P; Zboril R
    Small; 2018 May; 14(19):e1703860. PubMed ID: 29655304
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Effect of electrode materials on resistive switching behaviour of NbO
    Leonetti G; Fretto M; Pirri FC; De Leo N; Valov I; Milano G
    Sci Rep; 2023 Oct; 13(1):17003. PubMed ID: 37813937
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Periodic macroporous nanocrystalline antimony-doped tin oxide electrode.
    Arsenault E; Soheilnia N; Ozin GA
    ACS Nano; 2011 Apr; 5(4):2984-8. PubMed ID: 21391718
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.
    Qian K; Cai G; Nguyen VC; Chen T; Lee PS
    ACS Appl Mater Interfaces; 2016 Oct; 8(41):27885-27891. PubMed ID: 27704752
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.