These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

220 related articles for article (PubMed ID: 32869977)

  • 21. Correlation between Optical and Structural Characteristics in Coaxial GaInN/GaN Multiple Quantum Shell Nanowires with AlGaN Spacers.
    Lu W; Miyamoto Y; Okuda R; Ito K; Sone N; Iwaya M; Tekeuchi T; Kamiyama S; Akasaki I
    ACS Appl Mater Interfaces; 2020 Nov; 12(45):51082-51091. PubMed ID: 33119267
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.
    Musolino M; Tahraoui A; Fernández-Garrido S; Brandt O; Trampert A; Geelhaar L; Riechert H
    Nanotechnology; 2015 Feb; 26(8):085605. PubMed ID: 25656795
    [TBL] [Abstract][Full Text] [Related]  

  • 23. UV Emission from GaN Wires with
    Grenier V; Finot S; Jacopin G; Bougerol C; Robin E; Mollard N; Gayral B; Monroy E; Eymery J; Durand C
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):44007-44016. PubMed ID: 32894670
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core-Shell Structure.
    Deng J; Hao Z; Wang L; Yu J; Wang J; Sun C; Han Y; Xiong B; Li H; Zhao W; Liang X; Wang J; Luo Y
    Nanomaterials (Basel); 2020 Nov; 10(11):. PubMed ID: 33233685
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.
    Bolshakov AD; Mozharov AM; Sapunov GA; Shtrom IV; Sibirev NV; Fedorov VV; Ubyivovk EV; Tchernycheva M; Cirlin GE; Mukhin IS
    Beilstein J Nanotechnol; 2018; 9():146-154. PubMed ID: 29441260
    [TBL] [Abstract][Full Text] [Related]  

  • 26. AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects.
    Zhao S; Lu J; Hai X; Yin X
    Micromachines (Basel); 2020 Jan; 11(2):. PubMed ID: 31979274
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Structural and optical properties of self-assembled AlN nanowires grown on SiO
    Gačević Ž; Grandal J; Guo Q; Kirste R; Varela M; Sitar Z; Sánchez García MA
    Nanotechnology; 2021 May; 32(19):195601. PubMed ID: 33535196
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.
    Gao N; Lin W; Chen X; Huang K; Li S; Li J; Chen H; Yang X; Ji L; Yu ET; Kang J
    Nanoscale; 2014 Dec; 6(24):14733-9. PubMed ID: 25352426
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Enhancing deep-UV emission at 234 nm by introducing a truncated pyramid AlN/GaN nanostructure with fine-tuned multiple facets.
    Lu S; Jiang X; Wang Y; Huang K; Gao N; Cai D; Zhou Y; Yang CC; Kang J; Zhang R
    Nanoscale; 2022 Jan; 14(3):653-662. PubMed ID: 35018953
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control.
    Niu L; Hao Z; Hu J; Hu Y; Wang L; Luo Y
    Nanoscale Res Lett; 2011 Dec; 6(1):611. PubMed ID: 22136595
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si.
    Bolshakov AD; Fedorov VV; Shugurov KY; Mozharov AM; Sapunov GA; Shtrom IV; Mukhin MS; Uvarov AV; Cirlin GE; Mukhin IS
    Nanotechnology; 2019 Sep; 30(39):395602. PubMed ID: 31234150
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Electron-Beam-Pumped UVC Emitters Based on an (Al,Ga)N Material System.
    Jmerik V; Kozlovsky V; Wang X
    Nanomaterials (Basel); 2023 Jul; 13(14):. PubMed ID: 37513091
    [TBL] [Abstract][Full Text] [Related]  

  • 33. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer.
    Liudi Mulyo A; Rajpalke MK; Kuroe H; Vullum PE; Weman H; Fimland BO; Kishino K
    Nanotechnology; 2019 Jan; 30(1):015604. PubMed ID: 30375368
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
    Albert S; Bengoechea-Encabo A; Sánchez-García MA; Kong X; Trampert A; Calleja E
    Nanotechnology; 2013 May; 24(17):175303. PubMed ID: 23558410
    [TBL] [Abstract][Full Text] [Related]  

  • 36. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.
    Landré O; Bougerol C; Renevier H; Daudin B
    Nanotechnology; 2009 Oct; 20(41):415602. PubMed ID: 19755728
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures.
    Aiello A; Wu Y; Pandey A; Wang P; Lee W; Bayerl D; Sanders N; Deng Z; Gim J; Sun K; Hovden R; Kioupakis E; Mi Z; Bhattacharya P
    Nano Lett; 2019 Nov; 19(11):7852-7858. PubMed ID: 31573819
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources.
    Dimkou I; Harikumar A; Donatini F; Lähnemann J; den Hertog MI; Bougerol C; Bellet-Amalric E; Mollard N; Ajay A; Ledoux G; Purcell ST; Monroy E
    Nanotechnology; 2020 May; 31(20):204001. PubMed ID: 31986502
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures.
    Growden TA; Zhang W; Brown ER; Storm DF; Meyer DJ; Berger PR
    Light Sci Appl; 2018; 7():17150. PubMed ID: 30839526
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.