These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
140 related articles for article (PubMed ID: 32897052)
1. High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors. Pujar P; Madaravalli Jagadeeshkumar KK; Naqi M; Gandla S; Cho HW; Jung SH; Cho HK; Kalathi JT; Kim S ACS Appl Mater Interfaces; 2020 Oct; 12(40):44926-44933. PubMed ID: 32897052 [TBL] [Abstract][Full Text] [Related]
2. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite. Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504 [TBL] [Abstract][Full Text] [Related]
5. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis. Bukke RN; Saha JK; Mude NN; Kim Y; Lee S; Jang J ACS Appl Mater Interfaces; 2020 Aug; 12(31):35164-35174. PubMed ID: 32657115 [TBL] [Abstract][Full Text] [Related]
6. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric. Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983 [TBL] [Abstract][Full Text] [Related]
7. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack. Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185 [TBL] [Abstract][Full Text] [Related]
9. Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor. Oluwabi AT; Gaspar D; Katerski A; Mere A; Krunks M; Pereira L; Oja Acik I Materials (Basel); 2019 Dec; 13(1):. PubMed ID: 31861357 [TBL] [Abstract][Full Text] [Related]
10. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2. Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216 [TBL] [Abstract][Full Text] [Related]
11. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics. Tiwari N; Rajput M; John RA; Kulkarni MR; Nguyen AC; Mathews N ACS Appl Mater Interfaces; 2018 Sep; 10(36):30506-30513. PubMed ID: 30129368 [TBL] [Abstract][Full Text] [Related]
12. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443 [TBL] [Abstract][Full Text] [Related]
13. Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics. Na JW; Kim HJ; Hong S; Kim HJ ACS Appl Mater Interfaces; 2018 Oct; 10(43):37207-37215. PubMed ID: 30338976 [TBL] [Abstract][Full Text] [Related]
14. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric. Choi S; Kim KT; Park SK; Kim YH Materials (Basel); 2019 Mar; 12(6):. PubMed ID: 30871272 [TBL] [Abstract][Full Text] [Related]
15. The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage. Park SJ; Yu BS; Ha TJ J Nanosci Nanotechnol; 2019 Oct; 19(10):6178-6182. PubMed ID: 31026932 [TBL] [Abstract][Full Text] [Related]
16. Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors. Moreira M; Carlos E; Dias C; Deuermeier J; Pereira M; Barquinha P; Branquinho R; Martins R; Fortunato E Nanomaterials (Basel); 2019 Sep; 9(9):. PubMed ID: 31500167 [TBL] [Abstract][Full Text] [Related]
18. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode. Huang G; Duan L; Dong G; Zhang D; Qiu Y ACS Appl Mater Interfaces; 2014 Dec; 6(23):20786-94. PubMed ID: 25375760 [TBL] [Abstract][Full Text] [Related]
19. Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment. Zhang J; Huang W; Chang KC; Shi Y; Zhao C; Wang X; Meng H; Zhang S; Zhang M ACS Appl Mater Interfaces; 2021 Feb; 13(7):8584-8594. PubMed ID: 33555178 [TBL] [Abstract][Full Text] [Related]
20. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer. Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]