52 related articles for article (PubMed ID: 32905703)
1. Uncovering the Effects of Metal Contacts on Monolayer MoS
Schauble K; Zakhidov D; Yalon E; Deshmukh S; Grady RW; Cooley KA; McClellan CJ; Vaziri S; Passarello D; Mohney SE; Toney MF; Sood AK; Salleo A; Pop E
ACS Nano; 2020 Nov; 14(11):14798-14808. PubMed ID: 32905703
[TBL] [Abstract][Full Text] [Related]
2. Investigation of Interface Interactions Between Monolayer MoS
Juo JY; Kern K; Jung SJ
Langmuir; 2024 Jan; 40(2):1277-1285. PubMed ID: 38171366
[TBL] [Abstract][Full Text] [Related]
3. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations.
Zhong H; Quhe R; Wang Y; Ni Z; Ye M; Song Z; Pan Y; Yang J; Yang L; Lei M; Shi J; Lu J
Sci Rep; 2016 Mar; 6():21786. PubMed ID: 26928583
[TBL] [Abstract][Full Text] [Related]
4. Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer
Ruzmetov D; Neupane MR; Herzing A; O'Regan TP; Mazzoni A; Chin ML; Burke RA; Crowne FJ; Birdwell AG; Taylor DE; Kolmakov A; Zhang K; Robinson JA; Davydov AV; Ivanov TG
2d Mater; 2018; 5(4):. PubMed ID: 38616955
[TBL] [Abstract][Full Text] [Related]
5. Vanadium Metal Doping of Monolayer MoS
Xu D; Jian P; Liu W; Tan S; Yang Y; Peng M; Dai J; Chen C; Wu F
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38657168
[TBL] [Abstract][Full Text] [Related]
6. Approaching Ohmic Contacts for Ideal Monolayer MoS
Xiao J; Chen K; Zhang X; Liu X; Yu H; Gao L; Hong M; Gu L; Zhang Z; Zhang Y
Small Methods; 2023 Nov; 7(11):e2300611. PubMed ID: 37551044
[TBL] [Abstract][Full Text] [Related]
7. ALD-grown two-dimensional TiS
Mahlouji R; Kessels WMME; Sagade AA; Bol AA
Nanoscale Adv; 2023 Sep; 5(18):4718-4727. PubMed ID: 37705798
[TBL] [Abstract][Full Text] [Related]
8. Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO
Smyth CM; Cain JM; Boehm A; Ohlhausen JA; Lam MN; Yan X; Liu SE; Zeng TT; Sangwan VK; Hersam MC; Chou SS; Ohta T; Lu TM
ACS Appl Mater Interfaces; 2024 Jan; 16(2):2847-2860. PubMed ID: 38170963
[TBL] [Abstract][Full Text] [Related]
9. Large-Area MoS
Španková M; Chromik Š; Dobročka E; Pribusová Slušná L; Talacko M; Gregor M; Pécz B; Koos A; Greco G; Panasci SE; Fiorenza P; Roccaforte F; Cordier Y; Frayssinet E; Giannazzo F
Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947682
[TBL] [Abstract][Full Text] [Related]
10. Operando Study of Thermal Oxidation of Monolayer MoS
Park S; Garcia-Esparza AT; Abroshan H; Abraham B; Vinson J; Gallo A; Nordlund D; Park J; Kim TR; Vallez L; Alonso-Mori R; Sokaras D; Zheng X
Adv Sci (Weinh); 2021 May; 8(9):2002768. PubMed ID: 33977043
[TBL] [Abstract][Full Text] [Related]
11. Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS
Shin H; Katiyar AK; Hoang AT; Yun SM; Kim BJ; Lee G; Kim Y; Lee J; Kim H; Ahn JH
ACS Nano; 2024 Feb; 18(5):4414-4423. PubMed ID: 38277430
[TBL] [Abstract][Full Text] [Related]
12. Characteristics of p-Type Conduction in P-Doped MoS
Lee JS; Park CS; Kim TY; Kim YS; Kim EK
Nanomaterials (Basel); 2019 Sep; 9(9):. PubMed ID: 31500287
[TBL] [Abstract][Full Text] [Related]
13. Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS
Romanov RI; Zabrosaev IV; Chouprik AA; Yakubovsky DI; Tatmyshevskiy MK; Volkov VS; Markeev AM
Nanomaterials (Basel); 2023 Oct; 13(19):. PubMed ID: 37836353
[TBL] [Abstract][Full Text] [Related]
14. Electron Irradiation of Metal Contacts in Monolayer MoS
Pelella A; Kharsah O; Grillo A; Urban F; Passacantando M; Giubileo F; Iemmo L; Sleziona S; Pollmann E; Madauß L; Schleberger M; Di Bartolomeo A
ACS Appl Mater Interfaces; 2020 Sep; 12(36):40532-40540. PubMed ID: 32805860
[TBL] [Abstract][Full Text] [Related]
15. Enabling room temperature ferromagnetism in monolayer MoS
Fu S; Kang K; Shayan K; Yoshimura A; Dadras S; Wang X; Zhang L; Chen S; Liu N; Jindal A; Li X; Pasupathy AN; Vamivakas AN; Meunier V; Strauf S; Yang EH
Nat Commun; 2020 Apr; 11(1):2034. PubMed ID: 32341412
[TBL] [Abstract][Full Text] [Related]
16. Physical adsorption and oxidation of ultra-thin MoS
Jiang Y; Liu Z; Zhou H; Sharma A; Deng J; Ke C
Nanotechnology; 2023 Jul; 34(40):. PubMed ID: 37462320
[TBL] [Abstract][Full Text] [Related]
17. Non-volatile resistive switching mechanism in single-layer MoS
Boschetto G; Carapezzi S; Todri-Sanial A
Nanoscale Adv; 2023 Aug; 5(16):4203-4212. PubMed ID: 37560426
[TBL] [Abstract][Full Text] [Related]
18. Giant renormalization of dopant impurity levels in 2D semiconductor MoS
Hwang J; Zhang C; Kim YS; Wallace RM; Cho K
Sci Rep; 2020 Mar; 10(1):4938. PubMed ID: 32188874
[TBL] [Abstract][Full Text] [Related]
19. Enhancing Carrier Mobility in Monolayer MoS
Zhang Y; Zhao HL; Huang S; Hossain MA; van der Zande AM
ACS Nano; 2024 May; 18(19):12377-12385. PubMed ID: 38701373
[TBL] [Abstract][Full Text] [Related]
20. Silver Decoration of Vertically Aligned MoS
Youssef KA; Das A; Colomer JF; Hemberg A; Noirfalise X; Bittencourt C
Materials (Basel); 2024 Jun; 17(12):. PubMed ID: 38930251
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
