These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

179 related articles for article (PubMed ID: 32910132)

  • 21. Mobility engineering and a metal-insulator transition in monolayer MoS₂.
    Radisavljevic B; Kis A
    Nat Mater; 2013 Sep; 12(9):815-20. PubMed ID: 23793161
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Quantum transport simulations of sub-5 nm bilayer Ga
    Li P; Dong L; Peng B; Nan K; Liu W
    J Phys Condens Matter; 2023 Oct; 36(3):. PubMed ID: 37802063
    [TBL] [Abstract][Full Text] [Related]  

  • 23. How good can monolayer MoS₂ transistors be?
    Yoon Y; Ganapathi K; Salahuddin S
    Nano Lett; 2011 Sep; 11(9):3768-73. PubMed ID: 21790188
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Ballistic two-dimensional InSe transistors.
    Jiang J; Xu L; Qiu C; Peng LM
    Nature; 2023 Apr; 616(7957):470-475. PubMed ID: 36949203
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.
    Yin Y; Zhang Z; Zhong H; Shao C; Wan X; Zhang C; Robertson J; Guo Y
    ACS Appl Mater Interfaces; 2021 Jan; 13(2):3387-3396. PubMed ID: 33404208
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.
    Zhao P; Li J; Wei W; Sun Q; Jin H; Huang B; Dai Y
    Phys Chem Chem Phys; 2017 Oct; 19(40):27233-27239. PubMed ID: 28990022
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors.
    Peng B; Zheng W; Qin J; Zhang W
    Materials (Basel); 2018 Mar; 11(3):. PubMed ID: 29543770
    [TBL] [Abstract][Full Text] [Related]  

  • 28. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.
    Liu B; Ma Y; Zhang A; Chen L; Abbas AN; Liu Y; Shen C; Wan H; Zhou C
    ACS Nano; 2016 May; 10(5):5153-60. PubMed ID: 27159780
    [TBL] [Abstract][Full Text] [Related]  

  • 29. First-principles investigations on MXene-blue phosphorene and MXene-MoS
    Zhou Y; Zhuge X; An P; Du S
    Nanotechnology; 2020 Sep; 31(39):395203. PubMed ID: 32442982
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Sub-5 nm Gate-Length Monolayer Selenene Transistors.
    Li Q; Tan X; Yang Y; Xiong X; Zhang T; Weng Z
    Molecules; 2023 Jul; 28(14):. PubMed ID: 37513262
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.
    Zhang P; Wang H; Yan D
    Adv Mater; 2017 Sep; 29(34):. PubMed ID: 28682010
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides.
    Li H; Xu P; Lu J
    Nanoscale; 2019 Dec; 11(48):23392-23401. PubMed ID: 31793968
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Ab initio performance predictions of single-layer In-V tunnel field-effect transistors.
    Lu J; Fan ZQ; Gong J; Jiang XW
    Phys Chem Chem Phys; 2017 Aug; 19(30):20121-20126. PubMed ID: 28726966
    [TBL] [Abstract][Full Text] [Related]  

  • 34. SiX
    Yan S; Wang K; Guo Z; Wu YN; Chen S
    Nano Lett; 2024 May; 24(20):6158-6164. PubMed ID: 38723204
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC
    Xu Y; Li D; Sun H; Xu H; Li P
    Phys Chem Chem Phys; 2024 Jan; 26(5):4284-4297. PubMed ID: 38231547
    [TBL] [Abstract][Full Text] [Related]  

  • 36. High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study.
    Zhu J; Ning J; Wang D; Zhang J; Guo L; Hao Y
    Nanoscale Res Lett; 2019 Aug; 14(1):277. PubMed ID: 31418092
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Defect-enriched tunability of electronic and charge-carrier transport characteristics of 2D borocarbonitride (BCN) monolayers from ab initio calculations.
    Yadav VK; Chakraborty H; Klein ML; Waghmare UV; Rao CNR
    Nanoscale; 2019 Nov; 11(41):19398-19407. PubMed ID: 31380534
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Solution-Processed Transistors Using Colloidal Nanocrystals with Composition-Matched Molecular "Solders": Approaching Single Crystal Mobility.
    Jang J; Dolzhnikov DS; Liu W; Nam S; Shim M; Talapin DV
    Nano Lett; 2015 Oct; 15(10):6309-17. PubMed ID: 26280943
    [TBL] [Abstract][Full Text] [Related]  

  • 39. A DFT study of Janus structure of S and Se in HfSSe layered as a promising candidate for electronic devices.
    Barhoumi M; Lazaar K; Bouzidi S; Said M
    J Mol Graph Model; 2020 May; 96():107511. PubMed ID: 31881469
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Strain Engineering for Enhancing Carrier Mobility in MoTe
    Shafi AM; Uddin MG; Cui X; Ali F; Ahmed F; Radwan M; Das S; Mehmood N; Sun Z; Lipsanen H
    Adv Sci (Weinh); 2023 Oct; 10(29):e2303437. PubMed ID: 37551999
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.