These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

205 related articles for article (PubMed ID: 32932468)

  • 41. Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
    Che J; Shao H; Kou J; Tian K; Chu C; Hou X; Zhang Y; Sun Q; Zhang ZH
    Nanoscale Res Lett; 2019 Aug; 14(1):268. PubMed ID: 31388778
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.
    Xing Z; Wang F; Wang Y; Liou JJ; Liu Y
    Opt Express; 2022 Sep; 30(20):36446-36455. PubMed ID: 36258572
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN.
    Zhao Y; Deng G; Niu Y; Wang Y; Zhang L; Yu J; Ma H; Chen X; Shi Z; Zhang B; Zhang Y
    Opt Lett; 2022 Jan; 47(2):385-388. PubMed ID: 35030622
    [TBL] [Abstract][Full Text] [Related]  

  • 44. High-efficiency InGaN blue LEDs with reduced positive sheet polarization.
    Velpula RT; Jain B; Patel M; Shakiba FM; Toan NQ; Nguyen HD; Nguyen HPT
    Appl Opt; 2022 Jun; 61(16):4967-4970. PubMed ID: 36255983
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Temperature Dependence of Electron Leakage Current in InGaN Blue Light-Emitting Diode Structures.
    Onwukaeme C; Lee B; Ryu HY
    Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889629
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions.
    Ji Y; Liu M; Liu C
    Appl Opt; 2022 Aug; 61(24):6961-6966. PubMed ID: 36256310
    [TBL] [Abstract][Full Text] [Related]  

  • 47. In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes.
    Cui S; Tao G; Gong L; Zhao X; Zhou S
    Materials (Basel); 2022 Dec; 15(23):. PubMed ID: 36500144
    [TBL] [Abstract][Full Text] [Related]  

  • 48. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Monolithic integration of GaN-based phototransistors and light-emitting diodes.
    Yeh PS; Chiu YC; Wu TC; Chen YX; Wang TH; Chou TC
    Opt Express; 2019 Oct; 27(21):29854-29862. PubMed ID: 31684241
    [TBL] [Abstract][Full Text] [Related]  

  • 50. High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
    Jain B; Velpula RT; Thang Bui HQ; Nguyen HD; Lenka TR; Nguyen TK; Nguyen HPT
    Opt Express; 2020 Jan; 28(1):665-675. PubMed ID: 32118989
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform.
    Lyu Q; Jiang H; Lau KM
    Opt Express; 2021 Mar; 29(6):8358-8364. PubMed ID: 33820283
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
    Xu R; Kang Q; Zhang Y; Zhang X; Zhang Z
    Micromachines (Basel); 2023 Apr; 14(4):. PubMed ID: 37421078
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?
    Wang W; Chu C; Che J; Hang S; Shao H; Tian K; Zhang Y; Zhang ZH
    Opt Express; 2021 Sep; 29(19):29651-29660. PubMed ID: 34614706
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
    Lin BC; Chen KJ; Wang CH; Chiu CH; Lan YP; Lin CC; Lee PT; Shih MH; Kuo YK; Kuo HC
    Opt Express; 2014 Jan; 22(1):463-9. PubMed ID: 24515006
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.
    Lai MJ; Chang YT; Wang SC; Huang SF; Liu RS; Zhang X; Chen LC; Lin RM
    Molecules; 2022 Nov; 27(21):. PubMed ID: 36364421
    [TBL] [Abstract][Full Text] [Related]  

  • 56. Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes.
    Ji X; Wei T; Yang F; Lu H; Wei X; Ma P; Yi X; Wang J; Zeng Y; Wang G; Li J
    Opt Express; 2014 May; 22 Suppl 3():A1001-8. PubMed ID: 24922364
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes.
    Hao GD; Tamari N; Obata T; Kinoshita T; Inoue SI
    Opt Express; 2017 Aug; 25(16):A639-A648. PubMed ID: 29041036
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes.
    Hrong RH; Zeng YY; Wang WK; Tsai CL; Fu YK; Kuo WH
    Opt Express; 2017 Dec; 25(25):32206-32213. PubMed ID: 29245884
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes.
    Zhang Z; Zhou Q; Liu X; Lv Z; Tang B; Geng H; Qi S; Zhou S
    Opt Lett; 2024 Apr; 49(8):2049-2052. PubMed ID: 38621073
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Exploring superlattice DBR effect on a micro-LED as an electron blocking layer.
    Yan G; Hyun BR; Jiang F; Kuo HC; Liu Z
    Opt Express; 2021 Aug; 29(16):26255-26264. PubMed ID: 34614935
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.