These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
5. Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO Dai S; Yang Q; Zeng B; Zheng S; Zhong X; Xiang J; Gao J; Zhao J; Liao J; Liao M; Zhou Y ACS Appl Mater Interfaces; 2022 Nov; 14(45):51459-51467. PubMed ID: 36318591 [TBL] [Abstract][Full Text] [Related]
6. Mimicking biological neurons with a nanoscale ferroelectric transistor. Mulaosmanovic H; Chicca E; Bertele M; Mikolajick T; Slesazeck S Nanoscale; 2018 Nov; 10(46):21755-21763. PubMed ID: 30431045 [TBL] [Abstract][Full Text] [Related]
7. Enhanced Second Harmonic Generation from Ferroelectric HfO Qin J; Huang F; Li X; Deng L; Kang T; Markov A; Yue F; Chen Y; Wen X; Liu S; Xiong Q; Semin S; Rasing T; Modotto D; Morandotti R; Xu J; Duan H; Bi L ACS Nano; 2019 Feb; 13(2):1213-1222. PubMed ID: 30629429 [TBL] [Abstract][Full Text] [Related]
8. A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing. Ali T; Mertens K; Kühnel K; Rudolph M; Oehler S; Lehninger D; Müller F; Revello R; Hoffmann R; Zimmermann K; Kämpfe T; Czernohorsky M; Seidel K; Van Houdt J; Eng LM Nanotechnology; 2021 Jul; 32(42):. PubMed ID: 34261048 [TBL] [Abstract][Full Text] [Related]
9. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures. Tasneem N; Kashyap H; Chae K; Park C; Lee PC; Lombardo SF; Afroze N; Tian M; Kumarasubramanian H; Hur J; Chen H; Chern W; Yu S; Bandaru P; Ravichandran J; Cho K; Kacher J; Kummel AC; Khan AI ACS Appl Mater Interfaces; 2022 Sep; 14(38):43897-43906. PubMed ID: 36121320 [TBL] [Abstract][Full Text] [Related]
10. Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes. Cao R; Huang G; Di Z; Zhu G; Mei Y Nanoscale Res Lett; 2014 Dec; 9(1):2412. PubMed ID: 26088987 [TBL] [Abstract][Full Text] [Related]
11. Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO Yoon SJ; Moon SE; Yoon SM Nanoscale; 2020 Jul; 12(25):13421-13430. PubMed ID: 32614009 [TBL] [Abstract][Full Text] [Related]
12. Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks. Jeon H; Kim SG; Park J; Kim SH; Park E; Kim J; Yu HY Small; 2020 Dec; 16(49):e2004371. PubMed ID: 33205614 [TBL] [Abstract][Full Text] [Related]
13. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors. Mulaosmanovic H; Ocker J; Müller S; Schroeder U; Müller J; Polakowski P; Flachowsky S; van Bentum R; Mikolajick T; Slesazeck S ACS Appl Mater Interfaces; 2017 Feb; 9(4):3792-3798. PubMed ID: 28071052 [TBL] [Abstract][Full Text] [Related]
14. High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics. Li Q; Wang S; Li Z; Hu X; Liu Y; Yu J; Yang Y; Wang T; Meng J; Sun Q; Zhang DW; Chen L Nat Commun; 2024 Mar; 15(1):2686. PubMed ID: 38538586 [TBL] [Abstract][Full Text] [Related]
15. Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing. Ryu H; Wu H; Rao F; Zhu W Sci Rep; 2019 Dec; 9(1):20383. PubMed ID: 31892720 [TBL] [Abstract][Full Text] [Related]
16. Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO Raffel Y; De S; Lederer M; Olivo RR; Hoffmann R; Thunder S; Pirro L; Beyer S; Chohan T; Kämpfe T; Seidel K; Heitmann J ACS Appl Electron Mater; 2022 Nov; 4(11):5292-5300. PubMed ID: 36439397 [TBL] [Abstract][Full Text] [Related]
17. Experimental study of threshold voltage shift for Si:HfO Jung T; Shin C Nanotechnology; 2021 Jun; 32(37):. PubMed ID: 34098542 [TBL] [Abstract][Full Text] [Related]
18. Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction. Lederer M; Kämpfe T; Vogel N; Utess D; Volkmann B; Ali T; Olivo R; Müller J; Beyer S; Trentzsch M; Seidel K; Eng ALM Nanomaterials (Basel); 2020 Feb; 10(2):. PubMed ID: 32098415 [TBL] [Abstract][Full Text] [Related]
19. Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read. Mulaosmanovic H; Kleimaier D; Dünkel S; Beyer S; Mikolajick T; Slesazeck S Nanoscale; 2021 Oct; 13(38):16258-16266. PubMed ID: 34549741 [TBL] [Abstract][Full Text] [Related]
20. Effects of Charge Trapping on Memory Characteristics for HfO Wang J; Bi J; Xu Y; Niu G; Liu M; Stempitsky V Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839006 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]