338 related articles for article (PubMed ID: 32964602)
1. Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching.
Li Y; Fuller EJ; Sugar JD; Yoo S; Ashby DS; Bennett CH; Horton RD; Bartsch MS; Marinella MJ; Lu WD; Talin AA
Adv Mater; 2020 Nov; 32(45):e2003984. PubMed ID: 32964602
[TBL] [Abstract][Full Text] [Related]
2. Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge.
Park J; Kumar A; Zhou Y; Oh S; Kim JH; Shi Y; Jain S; Hota G; Qiu E; Nagle AL; Schuller IK; Schuman CD; Cauwenberghs G; Kuzum D
Nat Commun; 2024 Apr; 15(1):3492. PubMed ID: 38664381
[TBL] [Abstract][Full Text] [Related]
3. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications.
Ielmini D; Milo V
J Comput Electron; 2017; 16(4):1121-1143. PubMed ID: 31997981
[TBL] [Abstract][Full Text] [Related]
4. Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations.
Udaya Mohanan K
Nanomaterials (Basel); 2024 Mar; 14(6):. PubMed ID: 38535676
[TBL] [Abstract][Full Text] [Related]
5. Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays.
Fedotov M; Korotitsky V; Koveshnikov S
Nanomaterials (Basel); 2024 Apr; 14(8):. PubMed ID: 38668162
[TBL] [Abstract][Full Text] [Related]
6. Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices.
Zahari F; PĂ©rez E; Mahadevaiah MK; Kohlstedt H; Wenger C; Ziegler M
Sci Rep; 2020 Sep; 10(1):14450. PubMed ID: 32879397
[TBL] [Abstract][Full Text] [Related]
7. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
Zahoor F; Hussin FA; Isyaku UB; Gupta S; Khanday FA; Chattopadhyay A; Abbas H
Discov Nano; 2023 Mar; 18(1):36. PubMed ID: 37382679
[TBL] [Abstract][Full Text] [Related]
8. Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching.
Jeon J; Eom K; Lee M; Kim S; Lee H
Small; 2023 Sep; 19(37):e2301452. PubMed ID: 37150870
[TBL] [Abstract][Full Text] [Related]
9. Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.
Ting YH; Chen JY; Huang CW; Huang TK; Hsieh CY; Wu WW
Small; 2018 Feb; 14(6):. PubMed ID: 29205791
[TBL] [Abstract][Full Text] [Related]
10. Sign backpropagation: An on-chip learning algorithm for analog RRAM neuromorphic computing systems.
Zhang Q; Wu H; Yao P; Zhang W; Gao B; Deng N; Qian H
Neural Netw; 2018 Dec; 108():217-223. PubMed ID: 30216871
[TBL] [Abstract][Full Text] [Related]
11. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM.
Lee J; Schell W; Zhu X; Kioupakis E; Lu WD
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11579-11586. PubMed ID: 30816044
[TBL] [Abstract][Full Text] [Related]
12. Electron holography on HfO
Niu G; Schubert MA; Sharath SU; Zaumseil P; Vogel S; Wenger C; Hildebrandt E; Bhupathi S; Perez E; Alff L; Lehmann M; Schroeder T; Niermann T
Nanotechnology; 2017 May; 28(21):215702. PubMed ID: 28462907
[TBL] [Abstract][Full Text] [Related]
13. Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.
Zahoor F; Azni Zulkifli TZ; Khanday FA
Nanoscale Res Lett; 2020 Apr; 15(1):90. PubMed ID: 32323059
[TBL] [Abstract][Full Text] [Related]
14. Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride.
Das NC; Kim M; Rani JR; Hong SM; Jang JH
Micromachines (Basel); 2021 Aug; 12(9):. PubMed ID: 34577692
[TBL] [Abstract][Full Text] [Related]
15. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.
Simanjuntak FM; Panda D; Wei KH; Tseng TY
Nanoscale Res Lett; 2016 Dec; 11(1):368. PubMed ID: 27541816
[TBL] [Abstract][Full Text] [Related]
16. Graphene-based RRAM devices for neural computing.
R RT; Das RR; Reghuvaran C; James A
Front Neurosci; 2023; 17():1253075. PubMed ID: 37886675
[TBL] [Abstract][Full Text] [Related]
17. Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks.
Guo Y; Wu H; Gao B; Qian H
Front Neurosci; 2019; 13():812. PubMed ID: 31447634
[TBL] [Abstract][Full Text] [Related]
18. Multi-Level Resistive Al/Ga
Wang LW; Huang CW; Lee KJ; Chu SY; Wang YH
Nanomaterials (Basel); 2023 Jun; 13(12):. PubMed ID: 37368281
[TBL] [Abstract][Full Text] [Related]
19. Modulating the resistive switching stability of HfO
Zhang DL; Wang J; Wu Q; Du Y
Phys Chem Chem Phys; 2023 Aug; 25(33):22388-22400. PubMed ID: 37581208
[TBL] [Abstract][Full Text] [Related]
20. Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.
Xue Q; Peng Y; Cao L; Xia Y; Liang J; Chen CC; Li M; Hang T
ACS Appl Mater Interfaces; 2022 Jun; 14(22):25710-25721. PubMed ID: 35604125
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]