These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
123 related articles for article (PubMed ID: 32986018)
1. Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green's function study. O'Donovan M; Luisier M; O'Reilly EP; Schulz S J Phys Condens Matter; 2020 Oct; 33(4):. PubMed ID: 32986018 [TBL] [Abstract][Full Text] [Related]
2. Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems. O'Donovan M; Farrell P; Streckenbach T; Koprucki T; Schulz S Opt Quantum Electron; 2022; 54(7):405. PubMed ID: 35694654 [TBL] [Abstract][Full Text] [Related]
3. Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells. Roble AA; Patra SK; Massabuau F; Frentrup M; Leontiadou MA; Dawson P; Kappers MJ; Oliver RA; Graham DM; Schulz S Sci Rep; 2019 Dec; 9(1):18862. PubMed ID: 31827118 [TBL] [Abstract][Full Text] [Related]
4. A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure. Park JH; Nandi R; Sim JK; Um DY; Kang S; Kim JS; Lee CR RSC Adv; 2018 Jun; 8(37):20585-20592. PubMed ID: 35542348 [TBL] [Abstract][Full Text] [Related]
5. Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations. Finn R; Schulz S J Chem Phys; 2022 Dec; 157(24):244705. PubMed ID: 36586983 [TBL] [Abstract][Full Text] [Related]
7. Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices. Gu GH; Jang DH; Nam KB; Park CG Microsc Microanal; 2013 Aug; 19 Suppl 5():99-104. PubMed ID: 23920184 [TBL] [Abstract][Full Text] [Related]
8. The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Humphreys CJ; Griffiths JT; Tang F; Oehler F; Findlay SD; Zheng C; Etheridge J; Martin TL; Bagot PAJ; Moody MP; Sutherland D; Dawson P; Schulz S; Zhang S; Fu WY; Zhu T; Kappers MJ; Oliver RA Ultramicroscopy; 2017 May; 176():93-98. PubMed ID: 28196629 [TBL] [Abstract][Full Text] [Related]
9. Monolithically integrated white light LEDs on (11-22) semi-polar GaN templates. Poyiatzis N; Athanasiou M; Bai J; Gong Y; Wang T Sci Rep; 2019 Feb; 9(1):1383. PubMed ID: 30718528 [TBL] [Abstract][Full Text] [Related]
10. Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires. Johar MA; Song HG; Waseem A; Kang JH; Ha JS; Cho YH; Ryu SW Nanoscale; 2019 Jun; 11(22):10932-10943. PubMed ID: 31139802 [TBL] [Abstract][Full Text] [Related]
11. Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition. Ra YH; Navamathavan R; Yoo HI; Lee CR Nano Lett; 2014 Mar; 14(3):1537-45. PubMed ID: 24564712 [TBL] [Abstract][Full Text] [Related]
12. Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations. Auf der Maur M; Pecchia A; Penazzi G; Rodrigues W; Di Carlo A Phys Rev Lett; 2016 Jan; 116(2):027401. PubMed ID: 26824564 [TBL] [Abstract][Full Text] [Related]
13. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes. Barettin D; Auf der Maur M; di Carlo A; Pecchia A; Tsatsulnikov AF; Lundin WV; Sakharov AV; Nikolaev AE; Korytov M; Cherkashin N; Hÿtch MJ; Karpov SY Nanotechnology; 2017 Jul; 28(27):275201. PubMed ID: 28612754 [TBL] [Abstract][Full Text] [Related]
14. Free charges versus excitons: photoluminescence investigation of InGaN/GaN multiple quantum well nanorods and their planar counterparts. Chen W; Wen X; Yang J; Latzel M; Patterson R; Huang S; Shrestha S; Jia B; Moss DJ; Christiansen S; Conibeer G Nanoscale; 2018 Mar; 10(11):5358-5365. PubMed ID: 29509196 [TBL] [Abstract][Full Text] [Related]
15. Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes. Peng D; Tan C; Chen Z; Feng Z J Nanosci Nanotechnol; 2015 Jun; 15(6):4604-7. PubMed ID: 26369087 [TBL] [Abstract][Full Text] [Related]
16. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy. Bao W; Su Z; Zheng C; Ning J; Xu S Sci Rep; 2016 Sep; 6():34545. PubMed ID: 27686154 [TBL] [Abstract][Full Text] [Related]
17. Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy. Sun CK; Chu SW; Tai SP; Keller S; Abare A; Mishra UK; DenBaars SP Scanning; 2001; 23(3):182-92. PubMed ID: 11405303 [TBL] [Abstract][Full Text] [Related]
18. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters. Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526 [TBL] [Abstract][Full Text] [Related]
19. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier. Ji Y; Zhang ZH; Tan ST; Ju ZG; Kyaw Z; Hasanov N; Liu W; Sun XW; Demir HV Opt Lett; 2013 Jan; 38(2):202-4. PubMed ID: 23454962 [TBL] [Abstract][Full Text] [Related]
20. Investigation on epitaxial lateral overgrowth of InGaN/GaN multi-quantum-well nanowires. Yin Y; Sun H; Tang X; Cao R; Chen P; Shi Y; Zhang R; Zheng Y J Nanosci Nanotechnol; 2013 Feb; 13(2):1389-91. PubMed ID: 23646644 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]