These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

193 related articles for article (PubMed ID: 33001341)

  • 1. Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness.
    Wang X; Liang F; Zhao D; Liu Z; Zhu J; Yang J
    Nanoscale Res Lett; 2020 Oct; 15(1):191. PubMed ID: 33001341
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells.
    Sun H; Chen Y; Ben Y; Zhang H; Zhao Y; Jin Z; Li G; Zhou M
    Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837187
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.
    Xing Y; Zhao D; Jiang D; Liu Z; Zhu J; Chen P; Yang J; Liang F; Liu S; Zhang L
    Nanoscale Res Lett; 2019 Mar; 14(1):88. PubMed ID: 30874975
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.
    Zheng C; Wang L; Mo C; Fang W; Jiang F
    ScientificWorldJournal; 2013; 2013():538297. PubMed ID: 24369453
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes.
    Peng D; Tan C; Chen Z; Feng Z
    J Nanosci Nanotechnol; 2015 Jun; 15(6):4604-7. PubMed ID: 26369087
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.
    Zhao WR; Weng GE; Wang JY; Zhang JY; Liang HW; Sekiguchi T; Zhang BP
    Nanoscale Res Lett; 2015 Dec; 10(1):459. PubMed ID: 26625883
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.
    Jung BO; Bae SY; Lee S; Kim SY; Lee JY; Honda Y; Amano H
    Nanoscale Res Lett; 2016 Dec; 11(1):215. PubMed ID: 27102904
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells.
    Wang Y; Liang F; Zhao D; Ben Y; Yang J; Liu Z; Chen P
    Nanomaterials (Basel); 2022 Sep; 12(18):. PubMed ID: 36144901
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
    Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate.
    Kim J; Lee S; Oh J; Ryu J; Park Y; Park SH; Yoon E
    Sci Rep; 2019 Jun; 9(1):8282. PubMed ID: 31164674
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer.
    Li J; Chen D; Li K; Wang Q; Shi M; Diao D; Cheng C; Li C; Leng J
    Nanomaterials (Basel); 2021 Nov; 11(11):. PubMed ID: 34835898
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
    Tsai CL; Wu WC
    Materials (Basel); 2014 May; 7(5):3758-3771. PubMed ID: 28788647
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness.
    Jia Z; Hao X; Lu T; Dong H; Jia Z; Ma S; Liang J; Jia W; Xu B
    RSC Adv; 2020 Nov; 10(68):41443-41452. PubMed ID: 35516542
    [TBL] [Abstract][Full Text] [Related]  

  • 14. [Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes].
    Chen WH; Liao H; Hu XD; Li R; Jia QJ; Jin YH; Du WM; Yang ZJ; Zhang GY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2009 Jun; 29(6):1441-4. PubMed ID: 19810504
    [TBL] [Abstract][Full Text] [Related]  

  • 15. UV Emission from GaN Wires with
    Grenier V; Finot S; Jacopin G; Bougerol C; Robin E; Mollard N; Gayral B; Monroy E; Eymery J; Durand C
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):44007-44016. PubMed ID: 32894670
    [TBL] [Abstract][Full Text] [Related]  

  • 16. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
    Tsai MT; Chu CM; Huang CH; Wu YH; Chiu CH; Li ZY; Tu PM; Lee WI; Kuo HC
    Nanoscale Res Lett; 2014 Dec; 9(1):2418. PubMed ID: 26088993
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
    Liu W; Zhao DG; Jiang DS; Chen P; Liu ZS; Zhu JJ; Shi M; Zhao DM; Li X; Liu JP; Zhang SM; Wang H; Yang H; Zhang YT; Du GT
    Opt Express; 2015 Jun; 23(12):15935-43. PubMed ID: 26193570
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template.
    Johar MA; Kim T; Song HG; Waseem A; Kang JH; Hassan MA; Bagal IV; Cho YH; Ryu SW
    Nanoscale Adv; 2020 Apr; 2(4):1654-1665. PubMed ID: 36132313
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen.
    Sousa MA; Esteves TC; Sedrine NB; Rodrigues J; Lourenço MB; Redondo-Cubero A; Alves E; O'Donnell KP; Bockowski M; Wetzel C; Correia MR; Lorenz K; Monteiro T
    Sci Rep; 2015 Apr; 5():9703. PubMed ID: 25853988
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN.
    Yu CT; Lai WC; Yen CH; Hsu HC; Chang SJ
    Opt Express; 2014 May; 22 Suppl 3():A633-41. PubMed ID: 24922371
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.